scholarly journals A sensitive and versatile method for characterization of protein-mediated transformations of quantum dots

The Analyst ◽  
2016 ◽  
Vol 141 (8) ◽  
pp. 2574-2580 ◽  
Author(s):  
Magdalena Matczuk ◽  
Joanna Legat ◽  
Andrei R. Timerbaev ◽  
Maciej Jarosz
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Throughput ◽  
Monitoring Tool ◽  
Protein Conjugates ◽  
Icp Ms ◽  
Highly Sensitive

A CE-ICP-MS hyphenated platform was developed to satisfy many expectations for a simple, highly sensitive, and high-throughput monitoring tool for the characterization of the quantum dot–protein conjugates in blood compartments.

scholarly journals High‐Throughput Robotic Synthesis and Photoluminescence Characterization of Aqueous Multinary Copper–Silver Indium Chalcogenide Quantum Dots

2021 ◽  
pp. 2100169
Author(s):  
Oleksandr Stroyuk ◽  
Oleksandra Raievska ◽  
Stefan Langner ◽  
Christian Kupfer ◽  
Anastasia Barabash ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Throughput

Imprinted gold 2D nanoarray for highly sensitive and convenient PSA detection via plasmon excited quantum dots

Lab on a Chip ◽  
2015 ◽  
Vol 15 (1) ◽  
pp. 253-263 ◽  
Author(s):  
Hong Yan Song ◽  
Ten It Wong ◽  
Anton Sadovoy ◽  
Lin Wu ◽  
Ping Bai ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Schematic Representation ◽  
Highly Sensitive ◽  
Set Up

Schematic representation of our immunodetection set-up, which uses a Nikon Ti Eclipse microscope to detect the plasmonic nanochip with quantum dot based bioassay established.

scholarly journals Characterization of Hapten-Protein Conjugates: Antibody Generation and Immunoassay Development for Chlorophenoxyacetic Acid Pesticides

2009 ◽  
Vol 92 (6) ◽  
pp. 1773-1779 ◽  
Author(s):  
Robin C Boro ◽  
K Vikas Singh ◽  
C Raman Suri
Keyword(s):  
Inhibitory Concentration ◽  
Dichlorophenoxyacetic Acid ◽  
Protein Conjugation ◽  
Protein Conjugates ◽  
Highly Sensitive ◽  
Ic50 Values ◽  
Chlorophenoxyacetic Acid ◽  
2,4 Dichlorophenoxyacetic Acid

Abstract The generation of specific and sensitive antibodies against small molecules is greatly dependent upon the characteristics of the hapten-protein conjugates. In this study, we report a new fluorescence-based method for the characterization of hapten-protein conjugates. The method is based on an effect promoted by hapten-protein conjugation density upon the fluorescence intensity of the intrinsic tryptophan chromophore molecules of the protein. The proposed methodology is applied to quantify the hapten-protein conjugation density for two different chlorophenoxyacetic acid pesticides, 2,4-dichlorophenoxyacetic acid (2,4-D) and 2,4-dichlorophenoxybutyric acid (2,4-DB), coupled to carrier protein. Highly sensitive anti-2,4-D and anti-2,4-DB antibodies were obtained using these well-characterized hapten-protein conjugates. The generated antibodies were used in an immunoassay format demonstrating inhibitory concentration (IC50) values equal to 30 and 7 ng/mL for 2,4-D and 2,4-DB, respectively. Linearity was observed in the concentration range between 0.1500 ng/mL with LODs around 4 and 3 ng/mL for 2,4-D and 2,4-DB, respectively, in standard water samples. The proposed method was successfully applied for the determination of the extent of hapten-protein conjugation to produce specific antibodies for immunoassay development against pesticides.

Fabrication of a highly sensitive electrochemiluminescence chlorpromazine sensor using a Ru(bpy)32+ incorporated carbon quantum dot–gelatin composite film

2017 ◽  
Vol 9 (6) ◽  
pp. 1011-1017 ◽  
Author(s):  
Zhimin Liu ◽  
Fang Zhang ◽  
Lin Cui ◽  
Kang Wang ◽  
Haijun Zhan
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Composite Film ◽  
Carbon Quantum Dots ◽  
Sensitive Detection ◽  
Carbon Quantum Dot ◽  
Sensing Platform ◽  
Highly Sensitive

A novel electrochemiluminescence sensing platform for the sensitive detection of chlorpromazine (CPZ) was fabricated based on a Ru(bpy)32+/carbon quantum dots/gelatin composite film.

A highly sensitive and fast graphene nanoribbon/CsPbBr3 quantum dot phototransistor with enhanced vertical metal oxide heterostructures

Nanoscale ◽  
2018 ◽  
Vol 10 (21) ◽  
pp. 10182-10189 ◽  
Author(s):  
Xiang Liu ◽  
Wenjian Kuang ◽  
Haibing Ni ◽  
Zhi Tao ◽  
Qianqian Huang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Metal Oxide ◽  
Graphene Nanoribbon ◽  
Oxide Heterostructures ◽  
Highly Sensitive

Although recent breakthroughs in reported graphene-based phototransistors with embedded quantum dots (QDs) have definitely been astonishing, there are still some obstacles in their practical use with regard to their electrical and optical performances.

Growth and Characterization of InAs Quantum Dot Enhanced Photovoltaic Devices

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seth Martin Hubbard ◽  
Ryne Raffaelle ◽  
Ross Robinson ◽  
Christopher Bailey ◽  
David Wilt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Spectral Response ◽  
Cell Structure ◽  
Inas Quantum Dots ◽  
Cell Structures ◽  
Dot Density ◽  
Inas Quantum Dot ◽  
Iv Curves

AbstractThe growth of InAs quantum dots (QDs) by organometallic vapor phase epitaxy (OMVPE) for use in GaAs based photovoltaics devices was investigated. Growth of InAs quantum dots was optimized according to their morphology and photoluminescence using growth temperature and V/III ratio. The optimized InAs QDs had sizes near 7×40 nm with a dot density of 5(±0.5)×1010 cm-2. These optimized QDs were incorporated into GaAs based p-i-n solar cell structures. Cells with single and multiple (5x) layers of QDs were embedded in the i-region of the GaAs p-i-n cell structure. An array of 1 cm2 solar cells was fabricated on these wafers, IV curves collected under 1 sun AM0 conditions, and the spectral response measured from 300-1100 nm. The quantum efficiency for each QD cell clearly shows sub-bandgap conversion, indicating a contribution due to the QDs. Unfortunately, the overarching result of the addition of quantum dots to the baseline p-i-n GaAs cells was a decrease in efficiency. However, the addition of thin GaP strain compensating layers between the QD layers, was found to reduce this efficiency degradation and significantly enhance the subgap conversion in comparison to the un-compensated quantum dot cells.

3,4-Hydroxypyridinone-modified carbon quantum dot as a highly sensitive and selective fluorescent probe for the rapid detection of uranyl ions

2019 ◽  
Vol 6 (5) ◽  
pp. 1457-1465 ◽  
Author(s):  
Zhao Zhang ◽  
Duo Zhang ◽  
Cen Shi ◽  
Wei Liu ◽  
Lanhua Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Fluorescent Probe ◽  
Rapid Detection ◽  
Carbon Quantum Dots ◽  
Uranyl Ions ◽  
Carbon Quantum Dot ◽  
Highly Sensitive ◽  
Post Modification

3,4-Hydroxypyridinone-modified carbon quantum dots were prepared via a post-modification approach by introducing a specific molecule into the CQD surface, and applied to the field of rapid detection of uranyl ions.

Characterization of quantum dots in cancer cytosol using ICP-MS-based combined techniques

2019 ◽  
Vol 584 ◽  
pp. 113387
Author(s):  
Joanna Kruszewska ◽  
Magdalena Matczuk ◽  
Sandra Skorupska ◽  
Ilona Grabowska-Jadach ◽  
Emma Pérez Hernández ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Icp Ms

In situ polymerization of aniline on carbon quantum dots: a new platform for ultrasensitive detection of glucose and hydrogen peroxide

RSC Advances ◽  
2015 ◽  
Vol 5 (28) ◽  
pp. 21675-21680 ◽  
Author(s):  
Yanmei Zhang ◽  
Xinjian Yang ◽  
Zhiqiang Gao
Keyword(s):  
Hydrogen Peroxide ◽  
Quantum Dots ◽  
Quantum Dot ◽  
In Situ Polymerization ◽  
Carbon Quantum Dots ◽  
Ultrasensitive Detection ◽  
Carbon Quantum Dot ◽  
Sensing Platform ◽  
Highly Sensitive

A simple and highly sensitive carbon quantum dot based sensing platform for glucose and hydrogen peroxide.

Dual Quantum Dot Superlattice

2018 ◽  
Vol 27 (01n02) ◽  
pp. 1840003
Author(s):  
Barath Parthasarathy ◽  
Pial Mirdha ◽  
Jun Kondo ◽  
Faquir Jain
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Field Effect Transistor ◽  
Crystalline Silicon ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor ◽  
P Type ◽  
Dual Quantum

In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transistor (QDG-FET).

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