Correction: The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices
2015 ◽
Vol 3
(37)
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pp. 9748-9748
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Correction for ‘The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices’ by Afzaal Qamar et al., J. Mater. Chem. C, 2015, 3, 8804–8809.
1983 ◽
Vol 41
◽
pp. 518-519
1972 ◽
Vol 30
◽
pp. 550-551
2020 ◽
Vol 140
(1)
◽
pp. 32-37
Keyword(s):
On Modeling and Tracking Control for a Smart Structure with Stress-dependent Hysteresis Nonlinearity
2010 ◽
Vol 36
(11)
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pp. 1611-1619
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2020 ◽
Vol 27
(11)
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pp. 1744-1763
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