Low contact resistance in solid electrolyte-gated ZnO field-effect transistors with ferromagnetic contacts

2016 ◽  
Vol 4 (1) ◽  
pp. 150-156 ◽  
Author(s):  
Xiaotao Hu ◽  
Jia Sun ◽  
Chuan Qian ◽  
Fangmei Liu ◽  
Junliang Yang ◽  
...  

We report on solid-electrolyte-gated FETs with ferromagnetic contacts that result in a decrease in contact resistance and assess their potential for spintronics.

Nano Select ◽  
2021 ◽  
Author(s):  
Yanjun Shi ◽  
Jie Liu ◽  
Yuanyuan Hu ◽  
Wenping Hu ◽  
Lang Jiang

2013 ◽  
Vol 25 (15) ◽  
pp. 155303 ◽  
Author(s):  
A Di Bartolomeo ◽  
F Giubileo ◽  
L Iemmo ◽  
F Romeo ◽  
S Santandrea ◽  
...  

2011 ◽  
Vol 12 (12) ◽  
pp. 2019-2024 ◽  
Author(s):  
Yong Xu ◽  
Takeo Minari ◽  
Kazuhito Tsukagoshi ◽  
Romain Gwoziecki ◽  
Romain Coppard ◽  
...  

2018 ◽  
Vol 11 (7) ◽  
pp. 075102 ◽  
Author(s):  
Kuo-You Huang ◽  
Ang Sheng Chou ◽  
Shang-Yi Liu ◽  
Wei-Yu Cheng ◽  
Chin-Li Hung ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (11) ◽  
pp. 5191-5197 ◽  
Author(s):  
Shen Lai ◽  
Sung Kyu Jang ◽  
Jeong Ho Cho ◽  
Sungjoo Lee

Pentacene organic field-effect transistors integrated with MXene (Ti2CTx) electrodes are studied. Superior device performance with high mobility, high on/off ratio, and low contact resistance is achieved.


Author(s):  
Chris D. English ◽  
Gautam Shine ◽  
Vincent E. Dorgan ◽  
Krishna C. Saraswat ◽  
Eric Pop

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