Effect of the alkyl spacer length on the electrical performance of diketopyrrolopyrrole-thiophene vinylene thiophene polymer semiconductors

2015 ◽  
Vol 3 (44) ◽  
pp. 11697-11704 ◽  
Author(s):  
Hojeong Yu ◽  
Kwang Hun Park ◽  
Inho Song ◽  
Myeong-Jong Kim ◽  
Yun-Hi Kim ◽  
...  
Keyword(s):  
Electrical Performance ◽  
Side Chain ◽  
Device Performance ◽  
Spacer Length ◽  
Polymer Semiconductors

Systematic side-chain engineering through adjustment of spacer groups in diketopyrrolopyrrole-thiophene vinylene thiophene (DPP-TVT) polymers reveals odd–even dependence of device performance.

Side-Chain-Induced Rigid Backbone Organization of Polymer Semiconductors through Semifluoroalkyl Side Chains

2016 ◽  
Vol 138 (11) ◽  
pp. 3679-3686 ◽  
Author(s):  
Boseok Kang ◽  
Ran Kim ◽  
Seon Baek Lee ◽  
Soon-Ki Kwon ◽  
Yun-Hi Kim ◽  
...  
Keyword(s):  
Side Chain ◽  
Side Chains ◽  
Polymer Semiconductors

Structures and properties of side-chain liquid crystalline polynorbornenes containing an amide group: hydrogen bonding interactions and spacer length effects

2020 ◽  
Vol 11 (29) ◽  
pp. 4749-4759
Author(s):  
Dong Shi ◽  
Wen-Ying Chang ◽  
Xiang-Kui Ren ◽  
Shuang Yang ◽  
Er-Qiang Chen
Keyword(s):  
Mechanical Properties ◽  
Hydrogen Bond ◽  
Liquid Crystalline ◽  
Amide Group ◽  
Self Organization ◽  
Side Chain ◽  
Hydrogen Bond Interaction ◽  
Spacer Length ◽  
Hydrogen Bonding Interactions ◽  
Structures And Properties

Side-chain liquid crystalline polynorbornenes based on benzanilide mesogens exhibit rich self-organization behaviours and enhanced mechanical properties owing to the lateral hydrogen bond interaction that can be tuned by the spacer length.

Effect of TSV Joule Heating on Device Performance

2013 ◽  
Author(s):  
Fahad Mirza ◽  
Gaurang Naware ◽  
Thiagarajan Raman ◽  
Ankur Jain ◽  
Dereje Agonafer
Keyword(s):  
Joule Heating ◽  
Heat Dissipation ◽  
Form Factors ◽  
Signal Propagation ◽  
Junction Temperature ◽  
Electrical Performance ◽  
Device Performance ◽  
Base Line ◽  
Heat Current ◽  
Current Path

Convergence and miniaturization of consumer electronic products such as cameras, phones, etc. has been driven by enhanced performance and reduced microelectronics size. For past few decades Moore’s law has been driving the microelectronics industry to achieve high performance with small form-factors at a reasonable cost. While the continued miniaturization of the transistors has resulted in unparalleled growth of the electronics industry, further performance increment via size scaling could be cost-ineffective and difficult to manufacture. To satisfy the current/future integrated Circuit (IC) package requirements, vertical integration of chips holds the key, i.e., 3-D packaging. Chip-stacking (3-D) is emerging as a powerful technology to reduce package footprint, decrease interconnection power, higher frequencies, and provide efficient integration of heterogeneous devices. It allows further reduction in the form factor of current systems and eases the interconnect performance limitation since the components are integrated on top of each other instead of side-by-side, resulting in shorter interconnect lengths. Due to high package density and chip-stacking on top of each other, heat dissipation from the stacked chips becomes a concern. To overcome these thermal challenges and provide shorter/faster inter-chip electrical connection, Through Silicon Via (TSV) technology is being implemented in 3-D ICs. TSVs allow 3-D chips to be interconnected directly and provide high speed signal propagation. TSVs provide inter-chip heat/current path but the current flowing through the TSVs results in localized heat generation (Joule Heating) within the silicon, which could be detrimental to the overall performance of the system. In this paper, the effect of Joule heating on the device performance measured by trans-conductance, electron mobility (e− mobility), and channel thermal noise is analyzed. Thinned (100 μm) chips with a uniform power map and evenly distributed TSVs are analyzed in this work. Thermal distribution in the package is studied for different TSV currents including a base-line case of no-current (thermal TSV only) and the junction temperature is determined for each case. The response from the thermal analysis is correlated to the device performance through existing relations. Results indicate that joule heating has a significant effect on the thermal response of the 3D IC and subsequently proves to be detrimental to the chip performance. An understanding of the electrical performance dependence on TSV joule heating is developed through this work.

Influence of the side-chain structure and molecular weight on the re-entrant behaviors of mesogen-jacketed liquid crystalline polymers

RSC Advances ◽  
2016 ◽  
Vol 6 (82) ◽  
pp. 78516-78527 ◽  
Author(s):  
Zheng Xiang ◽  
Sheng Chen ◽  
Yongbing Luo ◽  
Ping Li ◽  
Hailiang Zhang
Keyword(s):  
Molecular Weight ◽  
Phase Behavior ◽  
Liquid Crystalline ◽  
Liquid Crystalline Polymers ◽  
Terminal Group ◽  
Chain Structure ◽  
Side Chain ◽  
Spacer Length ◽  
Crystalline Polymers

The influence of the alkyl spacer length and the terminal group volume influence on the phase behavior and structure of mesogen-jacketed liquid-crystalline polymers.

scholarly journals Foundry-compatible high-resolution patterning of vertically phase-separated semiconducting films for ultraflexible organic electronics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Binghao Wang ◽  
Wei Huang ◽  
Sunghoon Lee ◽  
Lizhen Huang ◽  
Zhi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Thin Film Transistors ◽  
Semiconducting Polymers ◽  
Environmentally Benign ◽  
Device Performance ◽  
Solvent Exposure ◽  
Semiconducting Polymer ◽  
Polymer Semiconductors ◽  
Benign Solvents

AbstractSolution processability of polymer semiconductors becomes an unfavorable factor during the fabrication of pixelated films since the underlying layer is vulnerable to subsequent solvent exposure. A foundry-compatible patterning process must meet requirements including high-throughput and high-resolution patternability, broad generality, ambient processability, environmentally benign solvents, and, minimal device performance degradation. However, known methodologies can only meet very few of these requirements. Here, a facile photolithographic approach is demonstrated for foundry-compatible high-resolution patterning of known p- and n-type semiconducting polymers. This process involves crosslinking a vertically phase-separated blend of the semiconducting polymer and a UV photocurable additive, and enables ambient processable photopatterning at resolutions as high as 0.5 μm in only three steps with environmentally benign solvents. The patterned semiconducting films can be integrated into thin-film transistors having excellent transport characteristics, low off-currents, and high thermal (up to 175 °C) and chemical (24 h immersion in chloroform) stability. Moreover, these patterned organic structures can also be integrated on 1.5 μm-thick parylene substrates to yield highly flexible (1 mm radius) and mechanically robust (5,000 bending cycles) thin-film transistors.

scholarly journals Influence of Carbon Quantum Dots on the Electrical Performance of Triboelectric Generators

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1025 ◽  
Author(s):  
Vasiliki Prifti ◽  
Antigoni Siaraka ◽  
Aikaterini Giannouli ◽  
Apostolos Segkos ◽  
Achilleas Bardakas ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Quantum Dots ◽  
Film Thickness ◽  
Potential Application ◽  
Dielectric Film ◽  
Sliding Mode ◽  
Flexible Substrate ◽  
Carbon Quantum Dots ◽  
Electrical Performance ◽  
Device Performance

In this work we investigate the triboelectric properties of Carbon Quantum Dots (CQDs) films for potential application in triboelectric generators. CQDs were deposited on silicon wafers, using spin on techniques. Device performance was estimated in sliding mode experiments, where the CQDs-surface was sliding on top of a flexible substrate. The triboelectric signal as well as the charging of capacitors, after signal rectification, was monitored as a function of time. Our results indicate that surface roughness plays a very important role in the triboelectric signal and could compensate opposite trends due to other parameters, such as the dielectric film thickness.

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