Laser irradiation-induced modification of the amorphous phase in GeTe films: the role of intermediate Ge–Te bonding in the crystallization mechanism
2015 ◽
Vol 3
(36)
◽
pp. 9393-9402
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Keyword(s):
Modified amorphous GeTe was analyzed in terms of variations in the local bonding structure. Inducstion of intermediated Ge–Te bonding in modified structure critically affects the phase change process.
2016 ◽
Vol 739
◽
pp. 012064
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Keyword(s):
Keyword(s):
1985 ◽
Vol 28
(4)
◽
pp. 884-885
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2021 ◽
Vol 169
◽
pp. 103564
1979 ◽
Vol 6
(3)
◽
pp. 189-197
Review on numerical simulations for nano-enhanced phase change material (NEPCM) phase change process
2019 ◽
Vol 141
(2)
◽
pp. 669-684
Keyword(s):
2017 ◽
Vol 122
◽
pp. 292-301
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Keyword(s):