Solution processing of highly conductive ruthenium and ruthenium oxide thin films from ruthenium–amine complexes

2015 ◽  
Vol 3 (17) ◽  
pp. 4490-4499 ◽  
Author(s):  
Yoshitaka Murakami ◽  
Jinwang Li ◽  
Daisuke Hirose ◽  
Shinji Kohara ◽  
Tatsuya Shimoda

Designing of ruthenium–amine complexes leads to preparation of highly conductive thin films of ruthenium (20–40 nm thick) and ruthenium oxide (50–90 nm thick) by a simple solution process.

2017 ◽  
Vol 5 (39) ◽  
pp. 10295-10301 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Taekyu An ◽  
Won-Yong Jin ◽  
Jae-Wook Kang ◽  
Jihoon Kim

Tungsten-doped indium oxide transparent conducting thin films, to be applied to inverted organic solar cells, were prepared by a polymer-assisted solution process.


2018 ◽  
Vol 661 ◽  
pp. 143-149 ◽  
Author(s):  
Thomas Guillemot ◽  
Nathanaelle Schneider ◽  
Nicolas Loones ◽  
F. Javier Ramos ◽  
Jean Rousset

2006 ◽  
Vol 937 ◽  
Author(s):  
Yutaka Natsume ◽  
Takashi Minakata

ABSTRACTWe have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.


1998 ◽  
Vol 13 (4) ◽  
pp. 883-890 ◽  
Author(s):  
Shigehito Deki ◽  
Yoshifumi Aoi

A novel wet process to synthesize metal oxide thin films has been developed. The process is called the Liquid-Phase Deposition (LPD) method. In this method, metal oxide or hydroxide thin films are formed on the substrate through the ligand-exchanging (hydrolysis) equilibrium reaction of metal-fluoro complex species and the F− consumption reaction of a F− scavenger. The LPD method is a unique soft solution process, and is performed by very simple procedures. In this paper, we develop a method of preparing composite oxide thin films, Pt-dispersed titanium oxide, and iron-nickel binary oxide thin films.


2017 ◽  
Vol 4 (10) ◽  
pp. 2480-2485 ◽  
Author(s):  
Jakob Kibsgaard ◽  
Thomas R. Hellstern ◽  
Shin-Jung Choi ◽  
Benjamin N. Reinecke ◽  
Thomas F. Jaramillo

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