A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity

2015 ◽  
Vol 3 (18) ◽  
pp. 4723-4728 ◽  
Author(s):  
Lin-Bao Luo ◽  
Han Hu ◽  
Xian-He Wang ◽  
Rui Lu ◽  
Yi-Feng Zou ◽  
...  
Keyword(s):  
Near Infrared ◽  
High Sensitivity ◽  
Response Speed ◽  
Fast Response ◽  
Device Performance ◽  
Infrared Photodetector

We report on a simple passivation strategy to improve the device performance of a near infrared (NIR) photodetector. Optoelectronic analysis reveals that after ultrathin AlOxpassivation, the device exhibits an obvious increase in on/off ratio. What is more, the response speed of the device was improved by more than 100 times, from 48 μs to 380 ns.

A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm

2018 ◽  
Vol 6 (18) ◽  
pp. 4861-4865 ◽  
Author(s):  
Yuange Wang ◽  
Xiaowen Huang ◽  
Di Wu ◽  
Ranran Zhuo ◽  
Enping Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Near Infrared ◽  
Response Speed ◽  
Fast Response ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
High Responsivity ◽  
Specific Detectivity

High-performance room-temperature infrared photodetectors based on MoS2/CdTe p–n heterojunction with broadband response, high responsivity, specific detectivity as well as fast response speed were demonstrated.

scholarly journals Tin Disulfide-Coated Microfiber for Humidity Sensing with Fast Response and High Sensitivity

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 648
Author(s):  
Aijie Liang ◽  
Jingyuan Ming ◽  
Wenguo Zhu ◽  
Heyuan Guan ◽  
Xinyang Han ◽  
...  
Keyword(s):  
Humidity Sensor ◽  
Small Diameter ◽  
High Sensitivity ◽  
Large Change ◽  
Small Variation ◽  
Response Speed ◽  
Fast Response ◽  
Tin Disulfide ◽  
Recovery Times ◽  
Response And Recovery

Breath monitoring is significant in assessing human body conditions, such as cardiac and pulmonary symptoms. Optical fiber-based sensors have attracted much attention since they are immune to electromagnetic radiation, thus are safe for patients. Here, a microfiber (MF) humidity sensor is fabricated by coating tin disulfide (SnS2) nanosheets onto the surface of MF. The small diameter (~8 μm) and the long length (~5 mm) of the MF promise strong interaction between guiding light and SnS2. Thus, a small variation in the relative humidity (RH) will lead to a large change in optical transmitted power. A high RH sensitivity of 0.57 dB/%RH is therefore achieved. The response and recovery times are estimated to be 0.08 and 0.28 s, respectively. The high sensitivity and fast response speed enable our SnS2-MF sensor to monitor human breath in real time.

scholarly journals Doubly resonant sub-ppt photoacoustic gas detection with eight decades dynamic range

2021 ◽  
Author(s):  
Zhen Wang ◽  
Hui Zhang ◽  
Qiang Wang ◽  
Simone Borri ◽  
Iacopo Galli ◽  
...  
Keyword(s):  
Gas Sensors ◽  
Near Infrared ◽  
Dynamic Range ◽  
High Sensitivity ◽  
Fast Response ◽  
Wide Dynamic Range ◽  
Acoustic Resonators ◽  
Light Waves ◽  
Energy Environment ◽  
Small Footprint

Abstract Gas sensors with high sensitivity, wide dynamic range, high selectivity, fast response, and small footprint are desirable across a broad range of applications in energy, environment, safety, and public health. However, designing a compact gas sensor with ultra-high sensitivity and ultra-wide dynamic range remains a challenge. Laser-based photoacoustic spectroscopy (PAS) is a promising candidate to fill this gap. Herein, we report a novel method to simultaneously enhance the acoustic and light waves for PAS using integrated optical and acoustic resonators. This increases sensitivity by more than two orders of magnitude and extends the dynamic range by more than three orders of magnitude, compared with the state-of-the-art photoacoustic gas sensors. We demonstrate the concept by exploiting a near-infrared absorption line of acetylene (C2H2) at 1531.59 nm, achieving a detection limit of 0.5 parts-per-trillion (ppt), a noise equivalent absorption (NEA) of 5.7×10-13 cm-1 and a linear dynamic range of eight orders of magnitude. This study enables the realization of compact ultra-sensitive and ultra-wide-dynamic-range gas sensors in a number of different fields.

Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

2020 ◽  
Vol 31 (48) ◽  
pp. 485206
Author(s):  
Yuanlin Shi ◽  
Zhiming Wu ◽  
Zihao Xiang ◽  
Pengyu Chen ◽  
Chunyu Li ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Fast Response ◽  
Infrared Photodetector ◽  
Silicon Based

scholarly journals 2D Materials in Infrared Detector Family

Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 33
Author(s):  
Antoni Rogalski
Keyword(s):  
High Temperature ◽  
Response Time ◽  
Near Infrared ◽  
2D Materials ◽  
Infrared Detector ◽  
High Sensitivity ◽  
Fast Response ◽  
Two Dimensional ◽  
Semiconducting Material ◽  
Thz Detectors

The paper compares two-dimensional (2D) material detectors performance with traditionally and commercially available ones operating in high temperature conditions. The most effective single graphene detectors are THz detectors which utilize plasma rectification phenomena in FETs. Most of 2D layered semiconducting material photodetectors operate at the visible and near-infrared regions and generally their high sensitivity does not coincide with a fast response time, which limits real detector functions.

Synthesis of vertically-aligned large-area MoS2 nanofilm and its application in MoS2/Si heterostructure photodetector

2021 ◽  
Author(s):  
Yong Lei ◽  
Xiao-Zhan Yang ◽  
Wenlin Feng
Keyword(s):  
Near Infrared ◽  
Transition Metal Dichalcogenides ◽  
Response Speed ◽  
Fast Response ◽  
Large Area ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Vertically Aligned ◽  
Deep Ultraviolet ◽  
Self Powered

Abstract Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides (TMDCs) and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2 nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20-nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA/W), good photodetectivity (5.36×1011 Jones) and high on/off ratio Ion/Ioff (8.31 ×103 at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectiveely. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2 and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.

Au nanorods-sensitized 1DPC for visible detection of NIR light

2017 ◽  
Vol 5 (11) ◽  
pp. 2942-2950 ◽  
Author(s):  
Huaizhong Shen ◽  
Yuxin Wu ◽  
Wenjing Wang ◽  
Hongyang Su ◽  
Wendong Liu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Near Infrared ◽  
Response Speed ◽  
Fast Response ◽  
Infrared Light ◽  
Near Infrared Light ◽  
One Dimensional ◽  
Au Nanorods ◽  
Dimensional Photonic Crystal ◽  
Nir Light

Au nanorod-sensitized one dimensional photonic crystal is fabricated for visible detection of near infrared light with fast response speed and flexibility.

Electrical Characteristic of UV Sensor Using Nanostructured Al Doped ZnO Thin Film

2013 ◽  
Vol 667 ◽  
pp. 384-387
Author(s):  
Mohamed Zahidi Musa ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Absorption Coefficient ◽  
Near Infrared ◽  
Uv Light ◽  
Light Exposure ◽  
Sol Gel ◽  
High Sensitivity ◽  
Fast Response ◽  
Uv Sensor ◽  
Coating Method ◽  
Doped Zno

The electrical properties of nanostructured Aluminum (Al) doped Zinc Oxide (ZnO) thin films based ultraviolet (UV) sensor prepared by sol-gel spin-coating method have been investigated. Uniform nanoparticles Al doped ZnO have been deposited with high absorption coefficient at UV region and low absorption coefficient properties in visible and near-infrared (NIR) region. I-V spectra show high sensitivity characteristic of UV sensor with fast response after UV light exposure.

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