A cupronickel-based micromesh film for use as a high-performance and low-voltage transparent heater

2015 ◽  
Vol 3 (32) ◽  
pp. 16621-16626 ◽  
Author(s):  
Han-Jung Kim ◽  
Yoonkap Kim ◽  
Jun-Ho Jeong ◽  
Jun-Hyuk Choi ◽  
Jihye Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Steady State ◽  
High Performance ◽  
Low Voltage ◽  
Transfer Printing ◽  
Steady State Temperature ◽  
Pure Cu ◽  
Printing Method ◽  
Maximum Steady State

Uniformly interconnected CuNi mesh film was prepared by using a simple transfer printing method. The CuNi mesh films showed excellent heating performances, which reached a maximum steady-state temperature of 225 °C in 60 s, with respect to applied low-voltage (9 V), and better thermal stability than that of the pure Cu mesh film.

scholarly journals High-performance Acetone Soluble Tape Transfer Printing Method for Heterogeneous Integration

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jiaqi Zhang ◽  
Yichang Wu ◽  
Zhe Li ◽  
Yachao Zhang ◽  
Yue Peng ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Performance ◽  
Water Soluble ◽  
Experimental Results ◽  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Adhesion Promoter ◽  
Thermal Release ◽  
Printing Method

Abstract A high-performance transfer printing method using a new soluble tape which can be dissolved in acetone is proposed to be used in heterogeneous integration. Si inks array was transferred from SOI wafers onto various substrates without adhesion promoter by this new method which we refer to as the acetone soluble tape (AST) method to compare with other transfer printing methods by using thermal release tape (TRT), water soluble tape (WST) and polydimethylsiloxane (PDMS). By using the AST method, the transfer printing process does not involve interface contention between stamp/inks and inks/receiver substrate so that it maximizes the transfer printing efficiency. Experimental results present the AST method has good performances, and various alien substrates, even curvilinear surfaces, can be selected as receiver substrates by the AST method. To examine the quality of the transferred Si inks, the Si TFTs were fabricated by using the Si membrane transferred by the AST method on sapphire substrate and the devices show the good performance. All the results confirm that the AST method is an effective method in heterogeneous integration.

scholarly journals Inexpensive Graphene Oxide Heaters Lithographed by Laser

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1184 ◽  
Author(s):  
Francisco J. Romero ◽  
Almudena Rivadeneyra ◽  
Inmaculada Ortiz-Gomez ◽  
Alfonso Salinas ◽  
Andrés Godoy ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Steady State ◽  
High Performance ◽  
Large Scale ◽  
Spray Deposition ◽  
Cost Effective ◽  
Fast Response ◽  
Stable Steady State ◽  
Steady State Temperature ◽  
High Level

In this paper, we present a simple and inexpensive method for the fabrication of high-performance graphene-based heaters on different large-scale substrates through the laser photothermal reduction of graphene oxide (laser-reduced graphene-oxide, LrGO). This method allows an efficient and localized high level of reduction and therefore a good electrical conductivity of the treated films. The performance of the heaters is studied in terms of steady-state temperature, power consumption, and time response for different substrates and sizes. The results show that the LrGO heaters can achieve stable steady-state temperatures higher than 200 °C when a voltage of 15 V is applied, featuring a time constant of around 4 s and a heat transfer coefficient of ~200 °C cm2/W. These characteristics are compared with other technologies in this field, demonstrating that the fabrication approach described in this work is competitive and promising to fabricate large-scale flexible heaters with a very fast response and high steady-state temperatures in a cost-effective way. This technology can be easily combined with other fabrication methods, such as screen printing or spray-deposition, for the manufacturing of complete sensing systems where the temperature control is required to adjust functionalities or to tune sensitivity or selectivity.

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

Transient self back-biased buffer for low-voltage high-performance applications in standard CMOS technologies

1999 ◽  
Vol 35 (2) ◽  
pp. 112 ◽  
Author(s):  
Y. Moisiadis ◽  
I. Bouras ◽  
C. Papadas ◽  
J.-P. Schoellkopf
Keyword(s):  
High Performance ◽  
Low Voltage

scholarly journals Identification of DC Thermal Steady-State Differential Inductance of Ferrite Power Inductors

Energies ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3854
Author(s):  
Salvatore Musumeci ◽  
Luigi Solimene ◽  
Carlo Stefano Ragusa
Keyword(s):  
Steady State ◽  
Input Voltage ◽  
Switching Frequency ◽  
Ohmic Losses ◽  
Steady State Temperature ◽  
Wide Range ◽  
Average Current ◽  
Power Inductors ◽  
Saturable Inductor ◽  
Thermal Steady State

In this paper, we propose a method for the identification of the differential inductance of saturable ferrite inductors adopted in DC–DC converters, considering the influence of the operating temperature. The inductor temperature rise is caused mainly by its losses, neglecting the heating contribution by the other components forming the converter layout. When the ohmic losses caused by the average current represent the principal portion of the inductor power losses, the steady-state temperature of the component can be related to the average current value. Under this assumption, usual for saturable inductors in DC–DC converters, the presented experimental setup and characterization method allow identifying a DC thermal steady-state differential inductance profile of a ferrite inductor. The curve is obtained from experimental measurements of the inductor voltage and current waveforms, at different average current values, that lead the component to operate from the linear region of the magnetization curve up to the saturation. The obtained inductance profile can be adopted to simulate the current waveform of a saturable inductor in a DC–DC converter, providing accurate results under a wide range of switching frequency, input voltage, duty cycle, and output current values.

A Low-Voltage High-Performance Frequency Divider exploiting Folded MCML

2021 ◽  
Author(s):  
Francesco Centurelli ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti ◽  
Gaetano Palumbo
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Frequency Divider

scholarly journals Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Myungwoo Son ◽  
Jaewon Jang ◽  
Yongsu Lee ◽  
Jungtae Nam ◽  
Jun Yeon Hwang ◽  
...  
Keyword(s):  
High Performance ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Time To Failure ◽  
Practical Applications ◽  
Cu Interconnects ◽  
Pressure Chemical ◽  
Cu Interconnect ◽  
Pure Cu

AbstractHere, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

scholarly journals Reliability-Oriented Design of Inverter-Fed Low-Voltage Electrical Machines: Potential Solutions

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4144
Author(s):  
Yatai Ji ◽  
Paolo Giangrande ◽  
Vincenzo Madonna ◽  
Weiduo Zhao ◽  
Michael Galea
Keyword(s):  
Power Density ◽  
High Speed ◽  
High Performance ◽  
Low Voltage ◽  
Electrical Machines ◽  
Design Stage ◽  
Switching Frequency ◽  
Special Focus ◽  
Electrical Machine ◽  
Engineering Approach

Transportation electrification has kept pushing low-voltage inverter-fed electrical machines to reach a higher power density while guaranteeing appropriate reliability levels. Methods commonly adopted to boost power density (i.e., higher current density, faster switching frequency for high speed, and higher DC link voltage) will unavoidably increase the stress to the insulation system which leads to a decrease in reliability. Thus, a trade-off is required between power density and reliability during the machine design. Currently, it is a challenging task to evaluate reliability during the design stage and the over-engineering approach is applied. To solve this problem, physics of failure (POF) is introduced and its feasibility for electrical machine (EM) design is discussed through reviewing past work on insulation investigation. Then the special focus is given to partial discharge (PD) whose occurrence means the end-of-life of low-voltage EMs. The PD-free design methodology based on understanding the physics of PD is presented to substitute the over-engineering approach. Finally, a comprehensive reliability-oriented design (ROD) approach adopting POF and PD-free design strategy is given as a potential solution for reliable and high-performance inverter-fed low-voltage EM design.

Sign in / Sign up

Export Citation Format

Share Document