scholarly journals Boron-doped onion-like carbon with enriched substitutional boron: the relationship between electronic properties and catalytic performance

2015 ◽  
Vol 3 (43) ◽  
pp. 21805-21814 ◽  
Author(s):  
Yangming Lin ◽  
Yansong Zhu ◽  
Bingsen Zhang ◽  
Yoong Ahm Kim ◽  
Morinobu Endo ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Catalytic Performance ◽  
Boron Doped ◽  
The Relationship

Boron-doped onion-like carbon is developed as a novel electrocatalyst. The detailed relationship between electronic properties and catalytic performance is explored.

Regulating the electronic properties of MoSe2 to improve its CO2 electrocatalytic reduction performance via atomic doping

2021 ◽  
Vol 45 (12) ◽  
pp. 5350-5356
Author(s):  
Jingjing Ye ◽  
Dewei Rao ◽  
Xiaohong Yan
Keyword(s):  
Electronic Properties ◽  
Electronic Property ◽  
Catalytic Performance ◽  
Reaction Intermediates ◽  
Electrocatalytic Reduction

The atomic environment should heavily influence the performance of CO2 reduction, and the regulated electronic property of reaction intermediates and metals (Cu) is responsible for the high catalytic performance of CH4 production.

Optical and electronic properties of heavily boron-doped homo-epitaxial diamond

2003 ◽  
Vol 199 (1) ◽  
pp. 9-18 ◽  
Author(s):  
E. Bustarret ◽  
E. Gheeraert ◽  
K. Watanabe
Keyword(s):  
Electronic Properties ◽  
Boron Doped ◽  
Optical And Electronic Properties

scholarly journals Absorption mechanism, structural and electronic properties of MC19 (M = B and Si) fullerenes with 1-acetylpiperazine

2017 ◽  
Vol 36 (1-2) ◽  
pp. 797-804
Author(s):  
Özgür Alver ◽  
Cemal Parlak ◽  
Mohamed I Elzagheid ◽  
Ponnadurai Ramasami
Keyword(s):  
Electronic Properties ◽  
Gas Phase ◽  
Basis Set ◽  
Stable Complex ◽  
Absorption Mechanism ◽  
Boron Doped ◽  
Structural And Electronic Properties ◽  
Influence Of Water ◽  
Vibrational Bands ◽  
Silicon Doped

The interaction mechanisms of undoped, silicon- and boron-doped C20 fullerenes and 1-acetylpiperazine (1-ap) were investigated. Stability, electronic properties, influence of water on the solubility and stability, molecular parameters, descriptive vibrational bands and nuclear magnetic resonance shielding values are reported. The quantum mechanical calculations were carried out using the M06-2X functional and the 6-31G(d) basis set. It is observed that all the complexes are more stabilized in water compared to the gas phase. The most stable complex was found as silicon-doped fullerene interacting with the carbonyl edge of 1-ap releasing energy of 64.13 kcal/mol in water.

The optical and electronic properties of semiconducting diamond

1993 ◽  
Vol 342 (1664) ◽  
pp. 233-244 ◽  
Keyword(s):  
Absorption Spectrum ◽  
Electronic Properties ◽  
Valence Band ◽  
Chemical Vapour ◽  
Impurity Band ◽  
Thermally Activated ◽  
Boron Doped ◽  
Optical And Electronic Properties ◽  
Temperature Dependences ◽  
Semiconducting Diamond

In this paper I review the evidence that shows that the optical and electronic properties of semiconducting diamond can be understood in terms of boron acceptors partially compensated by deep donors. In natural semiconducting diamond, in which the total impurity concentration is less than 1 ppm, there is a lot of fine structure in the acceptor absorption spectrum that is not fully understood, and the electrical conductivity is primarily associated with the thermally activated excitation of holes from the acceptor ground state to the valence band. Some of the problems regarding the analysis of Hall effect data in this material are discussed, including the temperature dependences of the scattering mechanisms, of the contribution from the split-off valence band and of the population of excited states. There are no adequate theoretical descriptions of any of these processes, and this leads to some uncertainties in the values of the parameters derived from the temperature dependence of the Hall coefficient. For boron-doped synthetic diamond, and thin film diamond grown by chemical vapour deposition (CVD), the defect concentrations are generally much higher, and much more inhomogeneous, than in natural semiconducting diamond. This results in a substantial broadening of the acceptor absorption spectrum and the electronic properties are greatly modified by increasing contributions from impurity band conduction as the acceptor concentrations are increased, leading to very low mobility values. For both poly crystalline and single crystal homoepitaxial CVD diamond, measurements of the electrical properties can be completely invalidated by the presence of a surface layer of non-diamond carbon.

Energetic stability and tuned electronic properties of boron-doped carbon phosphide monolayer

2019 ◽  
Author(s):  
Shivam Kansara ◽  
Sanjeev K. Gupta ◽  
Yogesh Sonvane ◽  
K. A. Nekrasov
Keyword(s):  
Electronic Properties ◽  
Boron Doped ◽  
Energetic Stability

scholarly journals A facile method to fabricate AC/CuO for efficient removal of organic pollutants by adsorption and persulfate-based advanced oxidation processes

2020 ◽  
Author(s):  
Youlin Li ◽  
Yu Hu ◽  
Wenqiao You ◽  
Guangming Zhou ◽  
Guilong Peng
Keyword(s):  
Catalytic Performance ◽  
Catalytic Degradation ◽  
Maximum Adsorption Capacity ◽  
Efficient Removal ◽  
X Ray ◽  
One Step ◽  
Ft Ir ◽  
Degradation Reaction ◽  
The Relationship ◽  
Insight Into

Abstract Activated carbon/CuO (AC/CuO) composites was prepared through a facile one-step hydrothermal method and used as a bifunctional material for adsorption and catalysis degradation of bisphenol A (BPA). The composite was characterized by Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), and X-ray powder diffraction (XRD). The obtained AC/CuO exhibited excellent adsorption and catalytic performance. The maximum adsorption capacity of BPA on the AC/CuO was 319.03 mg/g according to the Langmuir fitting. At an initial BPA concentration of 20 mg/L, the BPA degradation efficiencies were maintained above 96% for 15 min by using 20 mg/L AC/CuO and 2 mM peroxymonosulfate (PMS). Moreover, the relationship between adsorption and catalytic degradation was also investigated. The results indicated that the pre-adsorption disfavored the degradation reaction. This work not only provides a novel preparation method for AC/CuO catalyst, but also gives a deeper insight into the mechanisms between adsorption and catalytic degradation.

Optical and electronic properties of heavily boron-doped homo-epitaxial diamond

2003 ◽  
Vol 199 (1) ◽  
pp. 3-3
Author(s):  
E. Bustarret ◽  
E. Gheeraert ◽  
K. Watanabe
Keyword(s):  
Electronic Properties ◽  
Boron Doped ◽  
Optical And Electronic Properties

Evolution of Structural and Electronic Properties in Boron-doped Nanocrystalline Silicon Thin Films

2007 ◽  
Vol 989 ◽  
Author(s):  
Hyun Jung Lee ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Electronic Properties ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Nanocrystalline Silicon ◽  
Dark Conductivity ◽  
Crystalline Fraction ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Structural And Electronic Properties ◽  
Effective Mobility

AbstractWe report on the boron-doping dependence of the structural and electronic properties in nanocrystalline silicon (nc-Si:H) films directly deposited by plasma- enhanced chemical vapor deposition (PECVD). The crystallinity, micro-structure, and dark conductivity of the films were investigated by gradually varying the ratio of trimethylboron [B(CH3)3 or TMB] to silane (SiH4) from 0.1 to 2 %. It was found that the low level of boron doping (< 0.2 %) first compensated the nc-Si:H material which demonstrates slightly n-type properties. As the doping increased up to 0.5 %, the maximum dark conductivity (ód) of 1.11 S/cm was obtained while high crystalline fraction (Xc) of the films (over 70 %) was maintained. However, further increase in a TMB-to-SiH4 ratio reduced ód to the order of 10-7 S/cm due to a phase transition of the films from nanocrystalline to amorphous, which was indicated by Raman spectra measurements.P-channel nc-Si:H thin film transistors (TFTs) with top gate and staggered source/drain contacts were fabricated using the developed p+ nc-Si:H layer. The fabricated TFT exhibits a threshold voltage (VTp) of -26.2 V and field effective mobility of holes (μp) of 0.24 cm2/V·s.

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