scholarly journals Rational design of quinones for high power density biofuel cells

2015 ◽  
Vol 6 (8) ◽  
pp. 4867-4875 ◽  
Author(s):  
Ross D. Milton ◽  
David P. Hickey ◽  
Sofiene Abdellaoui ◽  
Koun Lim ◽  
Fei Wu ◽  
...  

Rationally designing quinones to label GDH and create a redox hydrogel that delivers high OCP, current and power densities.

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rohith Mittapally ◽  
Byungjun Lee ◽  
Linxiao Zhu ◽  
Amin Reihani ◽  
Ju Won Lim ◽  
...  

AbstractThermophotovoltaic approaches that take advantage of near-field evanescent modes are being actively explored due to their potential for high-power density and high-efficiency energy conversion. However, progress towards functional near-field thermophotovoltaic devices has been limited by challenges in creating thermally robust planar emitters and photovoltaic cells designed for near-field thermal radiation. Here, we demonstrate record power densities of ~5 kW/m2 at an efficiency of 6.8%, where the efficiency of the system is defined as the ratio of the electrical power output of the PV cell to the radiative heat transfer from the emitter to the PV cell. This was accomplished by developing novel emitter devices that can sustain temperatures as high as 1270 K and positioning them into the near-field (<100 nm) of custom-fabricated InGaAs-based thin film photovoltaic cells. In addition to demonstrating efficient heat-to-electricity conversion at high power density, we report the performance of thermophotovoltaic devices across a range of emitter temperatures (~800 K–1270 K) and gap sizes (70 nm–7 µm). The methods and insights achieved in this work represent a critical step towards understanding the fundamental principles of harvesting thermal energy in the near-field.


2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Wenfu Xie ◽  
Jianming Li ◽  
Yuke Song ◽  
Shijin Li ◽  
Jianbo Li ◽  
...  

AbstractZinc–air batteries (ZABs) hold tremendous promise for clean and efficient energy storage with the merits of high theoretical energy density and environmental friendliness. However, the performance of practical ZABs is still unsatisfactory because of the inevitably decreased activity of electrocatalysts when assembly into a thick electrode with high mass loading. Herein, we report a hierarchical electrocatalyst based on carbon microtube@nanotube core–shell nanostructure (CMT@CNT), which demonstrates superior electrocatalytic activity for oxygen reduction reaction and oxygen evolution reaction with a small potential gap of 0.678 V. Remarkably, when being employed as air–cathode in ZAB, the CMT@CNT presents an excellent performance with a high power density (160.6 mW cm−2), specific capacity (781.7 mAhg Zn −1 ) as well as long cycle stability (117 h, 351 cycles). Moreover, the ZAB performance of CMT@CNT is maintained well even under high mass loading (3 mg cm−2, three times as much as traditional usage), which could afford high power density and energy density for advanced electronic equipment. We believe that this work is promising for the rational design of hierarchical structured electrocatalysts for advanced metal-air batteries.


2008 ◽  
Vol 600-603 ◽  
pp. 1223-1226 ◽  
Author(s):  
Shin Ichi Kinouchi ◽  
Hiroshi Nakatake ◽  
T. Kitamura ◽  
S. Azuma ◽  
S. Tominaga ◽  
...  

A compact SiC converter having power densities about 9 W/cm3 is designed and fabricated. It is confirmed that the converter operates in a thermally permissive range. The power loss of the module of the converter measured under motor operations is less than 50% of the similar-rating Si module loss. The shrink of the effective volume of DC-link capacitor is necessary to achieve the high power-density SiC converter, in addition to the decrease of the cooling system volume due to the loss reduction caused by SiC devices.


2006 ◽  
Vol 527-529 ◽  
pp. 1277-1280 ◽  
Author(s):  
G. Gudjónsson ◽  
Fredrik Allerstam ◽  
H.Ö. Ólafsson ◽  
Per Åke Nilsson ◽  
Hans Hjelmgren ◽  
...  

We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.


2017 ◽  
Vol 10 (7) ◽  
pp. 1581-1589 ◽  
Author(s):  
Amay J. Bandodkar ◽  
Jung-Min You ◽  
Nam-Heon Kim ◽  
Yue Gu ◽  
Rajan Kumar ◽  
...  

A soft, stretchable wearable biofuel cell producing ∼1 mW power from sweat is presented.


Author(s):  
Andreas Patschger ◽  
Markus Franz ◽  
Jens Bliedtner ◽  
Jean Pierre Bergmann

Sign in / Sign up

Export Citation Format

Share Document