Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-κ gate dielectrics

RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16301-16307 ◽  
Author(s):  
Kaveh Ahadi ◽  
Ken Cadien
Keyword(s):  
Atomic Layer Deposition ◽  
Linear Growth ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Low Density ◽  
Layer Deposition ◽  
Anomalous Growth

Anomalous growth per cycle was observed using in situ ellipsometry during the initial cycles of plasma enhanced atomic layer deposition of high-κ dielectrics, while thermal atomic layer deposition of these oxides exhibited linear growth per cycle.

Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

2009 ◽  
Vol 45 (11) ◽  
pp. 570 ◽  
Author(s):  
S. Abermann ◽  
G. Pozzovivo ◽  
J. Kuzmik ◽  
C. Ostermaier ◽  
C. Henkel ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Collapse ◽  
Layer Deposition ◽  
High K ◽  
Pre Treatment

Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition

2005 ◽  
Vol 86 (22) ◽  
pp. 222904 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Takayoshi Miura ◽  
Yasuo Nara ◽  
Tsunetoshi Arikado
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document