Pressure induced semiconductor–metal phase transition in GaAs: experimental and theoretical approaches
Keyword(s):
GaAs undergoes a semiconductor–metal transition, which was investigated by in situ electrical measurements and first-principles calculations under a high pressure.
2018 ◽
Vol 203
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pp. 362-373
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2018 ◽
Vol 20
(14)
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pp. 9488-9497
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2020 ◽
Vol 2020
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pp. 1-9
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2011 ◽
Vol 13
(5)
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pp. 938-943
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2015 ◽
Vol 55
(1)
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pp. 227-238
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Keyword(s):
2009 ◽
Vol 26
(1)
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pp. 016403
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2013 ◽
Vol 690-693
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pp. 559-563
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