Pressure induced semiconductor–metal phase transition in GaAs: experimental and theoretical approaches

RSC Advances ◽  
2016 ◽  
Vol 6 (12) ◽  
pp. 10144-10149 ◽  
Author(s):  
Jia Wang ◽  
Baojia Wu ◽  
Guozhao Zhang ◽  
Lianhua Tian ◽  
Guangrui Gu ◽  
...  

GaAs undergoes a semiconductor–metal transition, which was investigated by in situ electrical measurements and first-principles calculations under a high pressure.

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21507-21513
Author(s):  
Ying Liu ◽  
Huifang Du ◽  
Leiming Fang ◽  
Fei Sun ◽  
Haipeng Su ◽  
...  

Combined high pressure in situ spectra with first-principles calculations, a possible hydrogen-bond assisted phase transition was proposed in tetrazole.


2018 ◽  
Vol 20 (14) ◽  
pp. 9488-9497 ◽  
Author(s):  
Pornmongkol Jimlim ◽  
Komsilp Kotmool ◽  
Udomsilp Pinsook ◽  
Suttichai Assabumrungrat ◽  
Rajeev Ahuja ◽  
...  

The structural phase transition and electronic properties of Li2O2 under pressures up to 500 GPa have been investigated using first-principles calculations.


2020 ◽  
Vol 2020 ◽  
pp. 1-9 ◽  
Author(s):  
P. O. Jomo ◽  
C. O. Otieno ◽  
P. W. O. Nyawere

We report the results of pressure-induced semiconductor-metal phase transition of the semiconducting chalcogenide compound KPSe6 under high pressure using the ab initio methods. The ground-state energy calculations were performed within density functional theory and the generalized gradient approximation using the pseudopotential method with plane-wave basis sets. The projector augmented-wave (PAW) pseudopotentials were used in our calculation. The optimized lattice parameters were found from total energy calculations as 13 Bohr, 1.6 Bohr, and 1.8 Bohr for cell dimensions one, two, and three, respectively, which are in good agreement with experimental calculations. At zero pressure, the material portrayed a semiconducting property with a direct bandgap of ≈1.7 eV. As we subjected the material to pressure, the band gap was observed to reduce until it disappeared. The phase transition from the semiconductor to metal was found to occur at ∼45 GPa, implying that the material underwent metallization as pressure was increased further.


2015 ◽  
Vol 55 (1) ◽  
pp. 227-238 ◽  
Author(s):  
K. K. Mishra ◽  
S. Nagabhusan Achary ◽  
Sharat Chandra ◽  
T. R. Ravindran ◽  
K. K. Pandey ◽  
...  

2009 ◽  
Vol 26 (1) ◽  
pp. 016403 ◽  
Author(s):  
Du Hui-Jing ◽  
Guo Li-Cong ◽  
Li Dong-Chun ◽  
Yu Dong-Li ◽  
He Ju-Long

2013 ◽  
Vol 690-693 ◽  
pp. 559-563 ◽  
Author(s):  
Xiao Cui Yang ◽  
En Jie Zhang ◽  
Hong Yuan Ma ◽  
Jun Ping Xiao

An investigation on structural stability of LuN under high pressure has been conducted using first-principles calculations. At elevated pressures LuN is predicted to undergo a phase transition from NaCl-type structure (B1) into CsCl-type structure (B2). The predicted transition pressure is 220 GPa. The phonon dispersion curves of B1 and B2 at 0 and 220 GPa are presented.


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