Electrodeposition of crystalline silicon directly from silicon tetrachloride in ionic liquid at low temperature

RSC Advances ◽  
2016 ◽  
Vol 6 (15) ◽  
pp. 12061-12067 ◽  
Author(s):  
Junling Zhang ◽  
Shimou Chen ◽  
Haitao Zhang ◽  
Suojiang Zhang ◽  
Xue Yao ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Ionic Liquid ◽  
Low Temperature ◽  
Crystalline Silicon ◽  
Silicon Tetrachloride ◽  
Cubic Crystal

Crystalline silicon was fabricated directly from silicon tetrachloride in ionic liquid at low temperature of 100 °C. SEM, TEM and SEAD revealed that as-deposited crystalline Si with diamond cubic crystal structure.

Synthesis of LiCoxMn2-xO4 by Low Temperature Solid-State Reaction for Cathode Material

2015 ◽  
Vol 1123 ◽  
pp. 100-103 ◽  
Author(s):  
Dyah Purwaningsih ◽  
Roto Roto ◽  
Narsito ◽  
Hari Sutrisno
Keyword(s):  
Crystal Structure ◽  
Solid State ◽  
Low Temperature ◽  
Lithium Batteries ◽  
Solid State Reaction ◽  
Direct Method ◽  
Low Cost ◽  
Cubic Crystal ◽  
Package Program ◽  
Cell Volumes

LiCoxMn2-xO4 can serve as one of the main candidates for cathode materials for lithium batteries since they are abundant, low cost and environmentally friendly. This study aims to study the synthesis of LiCoxMn2-xO4 by low temperature solid-state reaction and its microstructure determination. Attention is paid more to the mole ratio of Co/Mn in LiCoxMn2-xO4. The compound was characterized by XRD, SEM-EDX, and BET while the analysis of LiCoxMn2-xO4 microstructure was carried out by Direct Method using winPLOTR package program and Diamond using XRD data. The series of LiCoxMn2-xO4 have well–developed cubic crystal structure with Fd3m phase, and the increase in the dopant does not change its structure. The lattice parameters and cell volumes of LiCoxMn2-xO4 tend to decrease with the increase in x values

ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин
Keyword(s):  
Crystal Structure ◽  
Growth Rate ◽  
Low Temperature ◽  
Surface Morphology ◽  
Single Crystal ◽  
Root Mean Square Roughness ◽  
Rate Variation ◽  
Mean Square ◽  
Nucleation Layer ◽  
Low Temperature Epitaxy

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

Ionic liquid-induced low temperature graphitization of cellulose-derived biochar for high performance sodium storage

2021 ◽  
Vol 412 ◽  
pp. 127034
Author(s):  
Yang Yu ◽  
Zhuoya Ren ◽  
Qianqian Shang ◽  
Jiangang Han ◽  
Lei Li ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Low Temperature ◽  
High Performance ◽  
Sodium Storage

scholarly journals Generalization of intrinsic ductile-to-brittle criteria by Pugh and Pettifor for materials with a cubic crystal structure

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
O. N. Senkov ◽  
D. B. Miracle
Keyword(s):  
Crystal Structure ◽  
Shear Modulus ◽  
Bulk Modulus ◽  
Single Crystal ◽  
Elastic Constants ◽  
Mechanical Analysis ◽  
Quantum Mechanical ◽  
Modulus Ratio ◽  
Cubic Crystal ◽  
The Difference

AbstractTwo classical criteria, by Pugh and Pettifor, have been widely used by metallurgists to predict whether a material will be brittle or ductile. A phenomenological correlation by Pugh between metal brittleness and its shear modulus to bulk modulus ratio was established more than 60 years ago. Nearly four decades later Pettifor conducted a quantum mechanical analysis of bond hybridization in a series of intermetallics and derived a separate ductility criterion based on the difference between two single-crystal elastic constants, C12–C44. In this paper, we discover the link between these two criteria and show that they are identical for materials with cubic crystal structures.

Green synthesis of mesoporous MnNbOx oxide by a liquid induced self-assembly strategy for low-temperature removal of NOx

2019 ◽  
Vol 55 (100) ◽  
pp. 15073-15076 ◽  
Author(s):  
Huifang Cheng ◽  
Guodong Feng ◽  
Zhenzhen Yang ◽  
Tao Wang ◽  
Francis Okejiri ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Low Temperature ◽  
Green Synthesis ◽  
Self Assembly ◽  
Assembly Strategy ◽  
Highly Porous

A highly porous MnNbOx with excellent low-temperature NOx reduction was fabricated by a facile, sustainable ionic liquid induced self-assembly strategy.

Carrier Lifetime Measurements by Photoconductance at Low Temperature on Passivated Crystalline Silicon Wafers

2013 ◽  
Vol 1536 ◽  
pp. 119-125 ◽  
Author(s):  
Guillaume Courtois ◽  
Bastien Bruneau ◽  
Igor P. Sobkowicz ◽  
Antoine Salomon ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Doping Density ◽  
Lifetime Measurements ◽  
Effective Lifetime

ABSTRACTWe propose an implementation of the PCD technique to minority carrier effective lifetime assessment in crystalline silicon at 77K. We focus here on (n)-type, FZ, polished wafers passivated by a-Si:H deposited by PECVD at 200°C. The samples were immersed into liquid N2 contained in a beaker placed on a Sinton lifetime tester. Prior to be converted into lifetimes, data were corrected for the height shift induced by the beaker. One issue lied in obtaining the sum of carrier mobilities at 77K. From dark conductance measurements performed on the lifetime tester, we extracted an electron mobility of 1.1x104 cm².V-1.s-1 at 77K, the doping density being independently calculated in order to account for the freezing effect of dopants. This way, we could obtain lifetime curves with respect to the carrier density. Effective lifetimes obtained at 77K proved to be significantly lower than at RT and not to depend upon the doping of the a-Si:H layers. We were also able to experimentally verify the expected rise in the implied Voc, which, on symmetrically passivated wafers, went up from 0.72V at RT to 1.04V at 77K under 1 sun equivalent illumination.

Crystal structure and magnetic properties of “α′′-Fe16N2” containing residual α-Fe prepared by low-temperature ammonia nitridation

2012 ◽  
Vol 194 ◽  
pp. 76-79 ◽  
Author(s):  
S. Yamashita ◽  
Y. Masubuchi ◽  
Y. Nakazawa ◽  
T. Okayama ◽  
M. Tsuchiya ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Magnetic Properties ◽  
Low Temperature

Crystal chemistry of transition metal diarsenates M 2As2O7 (M = Mn, Co, Ni, Zn): variants of the thortveitite structure

2010 ◽  
Vol 66 (6) ◽  
pp. 603-614 ◽  
Author(s):  
Matthias Weil ◽  
Berthold Stöger
Keyword(s):  
Crystal Structure ◽  
Low Temperature ◽  
Transition Metal ◽  
Basic Structure ◽  
Structure Type ◽  
Ambient Conditions ◽  
Modulated Structure ◽  
Triclinic Crystal System ◽  
Space Groups ◽  
Unit Cells

The structures of the 3d divalent transition-metal diarsenates M 2As2O7 (M = Mn, Co, Ni, Zn) can be considered as variants of the monoclinic (C2/m) thortveitite [Sc2Si2O7] structure type with a ≃ 6.7, b ≃ 8.5, c ≃ 4.7 Å, α ≃ 90, β ≃ 102, γ ≃ 90° and Z = 2. Co2As2O7 and Ni2As2O7 are dimorphic. Their high-temperature (β) polymorphs adopt the thortveitite aristotype structure in C2/m, whereas their low-temperature (α) polymorphs are hettotypes and crystallize with larger unit cells in the triclinic crystal system in space groups P\bar 1 and P1, respectively. Mn2As2O7 undergoes no phase transition and likewise adopts the thortveitite structure type in C2/m. Zn2As2O7 has an incommensurately modulated crystal structure [C2/m(α,0,γ)0s] with q = [0.3190 (1), 0, 0.3717 (1)] at ambient conditions and transforms reversibly to a commensurately modulated structure with Z = 12 (I2/c) below 273 K. The Zn phase resembles the structures and phase transitions of Cr2P2O7. Besides descriptions of the low-temperature Co2As2O7, Ni2As2O7 and Zn2As2O7 structures as five-, three- and sixfold superstructures of the thortveitite-type basic structure, the superspace approach can also be applied to descriptions of all the commensurate structures. In addition to the ternary M 2As2O7 phases, the quaternary phase (Ni,Co)2As2O7 was prepared and structurally characterized. In contrast to the previously published crystal structure of the mineral petewilliamsite, which has the same idealized formula and has been described as a 15-fold superstructure of the thortveitite-type basic structure in space group C2, synthetic (Ni,Co)2As2O7 can be considered as a solid solution adopting the α-Ni2As2O7 structure type. Differences of the two structure models for (Ni,Co)2As2O7 are discussed.

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