Aqueous synthesis of stable and luminescent flexible non-covalently assembled europium(iii) complexes–organoclay films

RSC Advances ◽  
2015 ◽  
Vol 5 (125) ◽  
pp. 103433-103438 ◽  
Author(s):  
Tianren Wang ◽  
Meiqi Liu ◽  
Quan Ji ◽  
Yige Wang
Keyword(s):  
Thin Film ◽  
Hybrid Material ◽  
Red Light ◽  
Polymer Thin Film ◽  
Aqueous Synthesis ◽  
Light Emitting ◽  
Luminescent Polymer

Flexible, transparent and red-light-emitting luminescent polymer thin film derived from Eu(TTA)3-doped hydrophilic hybrid material.

Effects of electron-withdrawing groups in imidazole-phenanthroline ligands and their influence on the photophysical properties of EuIII complexes for white light-emitting diodes

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan
Keyword(s):  
Thin Film ◽  
Quantum Yield ◽  
White Light ◽  
Light Emitting Diode ◽  
Photophysical Properties ◽  
Red Light ◽  
Europium Complexes ◽  
Light Emitting ◽  
White Light Emitting Diodes ◽  
Phenanthroline Ligands

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).

Direct Measurement of Ion Redistribution and Resulting Modification of Chemical Equilibria in Polymer Thin Film Light-Emitting Electrochemical Cells

2018 ◽  
Vol 10 (45) ◽  
pp. 39100-39106 ◽  
Author(s):  
Maciej Kawecki ◽  
Roland Hany ◽  
Matthias Diethelm ◽  
Sandra Jenatsch ◽  
Quirin Grossmann ◽  
...  
Keyword(s):  
Thin Film ◽  
Direct Measurement ◽  
Electrochemical Cells ◽  
Polymer Thin Film ◽  
Light Emitting ◽  
Chemical Equilibria

Zinc oxide-based current spreading layer behavior on the performance of P -side-up thin-film red light emitting diodes

2018 ◽  
Vol 432 ◽  
pp. 196-201 ◽  
Author(s):  
Ming-Chun Tseng ◽  
Dong-Sing Wuu ◽  
Chi-Lu Chen ◽  
Hsin-Ying Lee ◽  
Ray-Hua Horng
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Current Spreading ◽  
Light Emitting ◽  
Layer Behavior

Synthesis and Luminescence Property of Poly(phenylenevinylene) with Alkoxyl Substituents under the Ultrasonic Irradiation

2012 ◽  
Vol 535-537 ◽  
pp. 1328-1331
Author(s):  
Wen Ding ◽  
Jin Hai Si ◽  
Feng Yun
Keyword(s):  
Thin Film ◽  
Ultrasonic Irradiation ◽  
Luminescence Property ◽  
Structural Defects ◽  
Polymer Thin Film ◽  
Light Emitting ◽  
Vis Spectroscopy ◽  
Ft Ir ◽  
Polymer Light Emitting Diodes ◽  
Reaction Speed

In this paper, poly [(2-methoxyl-5-octyloxy) Phenylene Vinylene] (MO-PPV) was synthesized by Gilch route under ultrasonic irradiation. The molecular structure, thin film and luminescence property examined through FT-IR, SEm, AFM, UV-Vis spectroscopy and fluorescent spectroscopy, the results showed that the ‘cavitations effect’ caused by the ultrasonic irradiation not only accelerate the reaction speed but also reduce structural defects of the polymer thin film, the synthesized MO-PPV is free of gelatins which is harmful for the polymer’s thin films act as active layer in polymer light-emitting diodes (PLED).

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

2018 ◽  
Vol 27 (4) ◽  
pp. 047803
Author(s):  
Bin Zhao ◽  
Wei Hu ◽  
Xian-Sheng Tang ◽  
Wen-Xue Huo ◽  
Li-Li Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Metallic Substrate ◽  
Light Emitting

Nanocharacterization of Relaxation Properties in Organic Thin Film Electronic Materials

2005 ◽  
Vol 899 ◽  
Author(s):  
Tomoko Gray ◽  
Rene Overney
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electronic Materials ◽  
Organic Thin Film ◽  
Polymer Thin Film ◽  
Characterization Methods ◽  
Light Emitting ◽  
Force Microscopy ◽  
Nlo Materials ◽  
Thin Film Electronics

AbstractWith increased molecular complexity of organic thin film electronics, novel characterization methods are required to provide nanoscale material property information. Particularly important in polymer thin film electronics are methods characterizing the mobility properties of materials that are in amorphous unsteady states. If the unsteady nature of materials is paired with dimensional and interfacial constraints in anisotropic systems, such as thin films, it produces material systems of great challenges with enormous engineering potentials. Two examples are addressed in this paper, involving desired and undesired supramolecular alignments in polymer thin films, the spectral stability in organic blue-light emitting diodes and the electro-optical (EO) activity in organic non-linear optical (NLO) materials, in conjunction with novel scanning probe microscopy (SFM) based characterization tools. The nanoscopic methods discussed here, i.e., shear modulation force microscopy (SM-FM), and nanoscale isothermal friction analysis (NIFA), offer a quantitative approach for investigating the mobility/stability of organic semiconductor polymer films. Thereby, local properties such as energy barriers for sub-molecular motions (relaxations) and critical transition temperatures can be directly inferred from organic films that are used in actual electronic devices.

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

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