Nano-grained ZrB2 thin films as a high-performance diffusion barrier in Cu metallization

RSC Advances ◽  
2016 ◽  
Vol 6 (2) ◽  
pp. 844-850 ◽  
Author(s):  
Y. Meng ◽  
F. Ma ◽  
Z. X. Song ◽  
Y. H. Li ◽  
K. W. Xu
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Diffusion Barrier ◽  
High Performance ◽  
Elevated Temperatures ◽  
Rf Magnetron Sputtering ◽  
Cu Metallization ◽  
Barrier Performance

Nano-grained ZrB2 thin films are prepared by radio-frequency (rf) magnetron sputtering and, the thermal stability and the diffusion barrier performance are evaluated at elevated temperatures.

Research of CoSiN Film as Diffusion Barrier in ULSI-Cu Metallization

2014 ◽  
Vol 988 ◽  
pp. 130-133
Author(s):  
Zai Yu Zhang ◽  
Ma Jia Wu ◽  
Xiu Hua Chen
Keyword(s):  
Thermal Stability ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Diffusion Barrier ◽  
Good Thermal Stability ◽  
Cu Metallization ◽  
Diffusion Barrier Layer ◽  
Barrier Performance ◽  
Si Films

CoSiN film can be used as diffusion barrier layer in ULSI-Cumetallization.CoSiN/Cu/CoSiN/SiO2/Si films are prepared by magnetron sputtering technology. Four-point-probe, SGC-10,Atomic forced microscopy (AFM) are used to detect the resistivity,film thickness and surface morphology. It is investigated the barrier performance of CoSiN film for Cu metallization in sub-45nm technology. The results shows that the resistivity and the components ofCoSiN/Cu/CoSiN/SiO2/Si film do not have the obvious change after being annealing at 550°C in Ar atomosphere, and CoSiN film can keep good barrier performance for Cu line. This multi-film shows good thermal stability .

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

scholarly journals Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

2019 ◽  
Vol 7 (48) ◽  
pp. 15383-15383
Author(s):  
Shun Han ◽  
Xiaoling Huang ◽  
Mingzhi Fang ◽  
Weiguo Zhao ◽  
Shijie Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Uv Detectors

Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering’ by Shun Han et al., J. Mater. Chem. C, 2019, 7, 11834–11844.

Effect of Temperature on the Optical and Morphological Properties of Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1115 ◽  
pp. 422-425
Author(s):  
Souad A.M. Al-Bat’hi ◽  
Maizatulnisa Othman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Zno Thin Films ◽  
Effect Of Temperature

This investigation deals with the effect of temperature on the optical and morphological properties of Zinc Oxide thin films prepared by radio-Frequency (RF) magnetron sputtering technique. In the present work, zinc oxide (ZnO) thin films have been deposited on glass substrates from 50°C to 300°C by radio frequency magnetron sputtering. The effects of deposition temperature on the crystallization behaviour and optical properties of the films have been studied. The thin films were characterized using Ultraviolet Visible Spectroscopy (UV-VIS), Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction Analysis (XRD). From the UV-VIS testing, the average transmission percentage of the films is between 80-95% for all deposition temperatures meanwhile the energy gap of ZnO thin films varies from 3.26 eV to 3.35 eV which is not much different from the theoretical value. Also, the grain size is getting smaller from 3.886nm, 3.216nm, 3.119nm and 3.079nm with respect to the increasing deposition temperature 50°C, 100°C, 200°C and 300°C respectively whereas the average grain size per intercept value is increasing. The patterns of the peak were about the same for all deposition temperature where the thin films have polycrystalline hexagonal wurtzite structure with the orientation perpendicular (002) to the substrate surface (c-axis orientation) at 34.5(2θ).

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

2019 ◽  
Vol 7 (38) ◽  
pp. 11834-11844 ◽  
Author(s):  
Shun Han ◽  
Xiaoling Huang ◽  
Mingzhi Fang ◽  
Weiguo Zhao ◽  
Shijie Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Sensitive Material ◽  
Uv Detectors ◽  
Highly Sensitive ◽  
Solar Blind

Room-temperature-fabricated amorphous Ga2O3 is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology.

Deposition of Fluorocarbon Thin Films on Polypropylene Substrate by RF Magnetron Sputtering

2009 ◽  
Vol 79-82 ◽  
pp. 875-878 ◽  
Author(s):  
Yu Hui Zhang ◽  
Quan Ji ◽  
Wen Fei Chen
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Growth Pattern ◽  
Rf Magnetron Sputtering ◽  
Discharge Power ◽  
Growth Mode ◽  
One Dimensional ◽  
Fluorocarbon Films

Radio frequency (rf) magnetron sputtering of polytetrafluoroethylene (PTFE) using argon as the working gas was used to prepare hydrophobic fluorocarbon films on a polypropylene substrate. The morphology, structure and hydrophobicity of the fluorocarbon films were analyzed by means of SEM, AFM, XPS and contact angle determination. The growth pattern in this system was a typical one-dimensional (1-D) Volmer-Weber growth mode. The films demonstrated dependence of structure and hydrophobicity on the conditions of preparation. The contact angle decreased with increasing discharge power and increased with increasing pressure. Those trends are attributed to the presence of differing proportions of -CF3, -CF2-, -CF-, and -C- in fluorocarbon thin films prepared with different energy.

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