Substitution induced band structure shape tuning in hybrid perovskites (CH3NH3Pb1−xSnxI3) for efficient solar cell applications

RSC Advances ◽  
2015 ◽  
Vol 5 (130) ◽  
pp. 107497-107502 ◽  
Author(s):  
Pushkar Kanhere ◽  
Sudip Chakraborty ◽  
Caroline J. Rupp ◽  
Rajeev Ahuja ◽  
Zhong Chen
Keyword(s):  
Optical Properties ◽  
Solar Cell ◽  
Band Structure ◽  
Band Gap ◽  
Electronic States ◽  
Optimum Composition ◽  
Electronic And Optical Properties ◽  
Sn Doping ◽  
Shape Tuning ◽  
Efficient Solar Cell

Electronic and optical properties of CH3NH3Pb1−xSnxI3 are determined using DFT. Sn doping narrows band gap allowing 850 nm absorption. Delocalized Sn-5p induced electronic states increase mobility. 50% Sn doping is revealed as optimum composition.

scholarly journals Computational Investigation of the Folded and Unfolded Band Structure and Structural and Optical Properties of CsPb(I1−xBrx)3 Perovskites

Crystals ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 342 ◽  
Author(s):  
Hamid M. Ghaithan ◽  
Zeyad A. Alahmed ◽  
Andreas Lyras ◽  
Saif M. H. Qaid ◽  
Abdullah S. Aldwayyan
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Band Gap ◽  
Spectral Weight ◽  
Band Gap Energy ◽  
Full Potential ◽  
Generalized Gradient ◽  
Electronic And Optical Properties ◽  
Generalized Gradient Approximation ◽  
Direct Band

The structural, electronic, and optical properties of inorganic CsPb(I1−xBrx)3 compounds were investigated using the full-potential linear augmented-plane wave (FP-LAPW) scheme with a generalized gradient approximation (GGA). Perdew–Burke–Ernzerhof generalized gradient approximation (PBE-GGA) and modified Becke–Johnson GGA (mBJ-GGA) potentials were used to study the electronic and optical properties. The band gaps calculated using the mBJ-GGA method gave the best agreement with experimentally reported values. CsPb(I1−xBrx)3 compounds were wide and direct band gap semiconductors, with a band gap located at the M point. The spectral weight (SW) approach was used to unfold the band structure. By substituting iodide with bromide, an increase in the band gap energy (Eg) values of 0.30 and 0.55 eV, using PBE-GGA and mBJ-GGA potentials, respectively, was observed, whereas the optical property parameters, which were also investigated, demonstrated the reverse effect. The high absorption spectra in the ultraviolet−visible energy range demonstrated that CsPb(I1−xBrx)3 perovskite could be used in optical and optoelectronic devices by partly replacing iodide with bromide.

scholarly journals First Principles Study on the Structural, Elastic, Electronic and Optical Properties of Cubic ‘Half-Heusler’ Alloy RuVAs Under Pressure

2020 ◽  
pp. 51-63 ◽  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Bulk Modulus ◽  
Band Gap ◽  
Elastic Constants ◽  
First Principles ◽  
Theoretical Data ◽  
Lattice Parameter ◽  
Electronic Band ◽  
Electronic And Optical Properties

The pressure effect (0 to 40 GPa) on the structural, elastic, electronic, and optical properties of half-metallic compound RuVAs has been investigated employing the DFT based on the first-principles method. The CASTEP computer code is used for this investigation. The calculated lattice parameter show slide deviation from the synthesized and other theoretical data. The normalized lattice parameter and volume are decreased with increasing pressure. The zero pressure elastic constants and also the pressure-dependent elastic constants are positive up to 40 GPa and satisfy the Born stability condition which ensured that the compound RuVAs is stable in nature. At zero pressure, the electronic band gap of 0.159 eV is observed from the band structure calculations which ensured the semimetallic nature of RuVAs. No band gap is observed in the electronic band structure at 40 GPa which indicates the occurrence of phase transition of compound RuVAs at this pressure. We have calculated the value of bulk modulus B, shear modulus G, Young’s modulus E, Pugh ratio B/G, Poisson’s ratio ν and anisotropy factor A of this compound by using the Voigt-Reuss-Hill (VRH) averaging scheme under pressure. The bulk modulus shows a linear response to pressure so that the hardness of this material is increased with increasing pressure. Furthermore, the optical properties such as reflectivity, absorptivity, conductivity, dielectric constant, refractive index, and loss function of RuVAs were evaluated and discussed under pressure up to 40 GPa.

scholarly journals Electronic and optical properties of vacancy ordered double perovskites A2BX6 (A = Rb, Cs; B = Sn, Pd, Pt; and X = Cl, Br, I): a first principles study

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Muhammad Faizan ◽  
K. C. Bhamu ◽  
Ghulam Murtaza ◽  
Xin He ◽  
Neeraj Kulhari ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
First Principles ◽  
Density Functional ◽  
Perovskite Solar Cells ◽  
Dielectric Constants ◽  
Maximum Efficiency ◽  
Exchange Potential ◽  
Double Perovskites ◽  
Electronic And Optical Properties

AbstractThe highly successful PBE functional and the modified Becke–Johnson exchange potential were used to calculate the structural, electronic, and optical properties of the vacancy-ordered double perovskites A2BX6 (A = Rb, Cs; B = Sn, Pd, Pt; X = Cl, Br, and I) using the density functional theory, a first principles approach. The convex hull approach was used to check the thermodynamic stability of the compounds. The calculated parameters (lattice constants, band gap, and bond lengths) are in tune with the available experimental and theoretical results. The compounds, Rb2PdBr6 and Cs2PtI6, exhibit band gaps within the optimal range of 0.9–1.6 eV, required for the single-junction photovoltaic applications. The photovoltaic efficiency of the studied materials was assessed using the spectroscopic-limited-maximum-efficiency (SLME) metric as well as the optical properties. The ideal band gap, high dielectric constants, and optimum light absorption of these perovskites make them suitable for high performance single and multi-junction perovskite solar cells.

First principles calculations of structural, electronic and optical properties of InN compound

2015 ◽  
Vol 29 (05) ◽  
pp. 1550028 ◽  
Author(s):  
R. Graine ◽  
R. Chemam ◽  
F. Z. Gasmi ◽  
R. Nouri ◽  
H. Meradji ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Density Functional ◽  
Local Density ◽  
Indium Nitride ◽  
Alternative Form ◽  
Full Potential ◽  
Generalized Gradient ◽  
Pressure Derivative ◽  
Electronic And Optical Properties

We carried out ab initio calculations of structural, electronic and optical properties of Indium nitride ( InN ) compound in both zinc blende and wurtzite phases, using the full-potential linearized augmented plane wave method (FP-LAPW), within the framework of density functional theory (DFT). For the exchange and correlation potential, local density approximation (LDA) and generalized gradient approximation (GGA) were used. Moreover, the alternative form of GGA proposed by Engel and Vosko (EV-GGA) and modified Becke–Johnson schemes (mBJ) were also applied for band structure calculations. Ground state properties such as lattice parameter, bulk modulus and its pressure derivative are calculated. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show good agreement with the available data. The calculated band structure shows a direct band gap Γ → Γ. In the optical properties section, several optical quantities are investigated; in particular we have deduced the interband transitions from the imaginary part of the dielectric function.

scholarly journals First-Principles Study on the Stabilities, Electronic and Optical Properties of GexSn1-xSe Alloys

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 876 ◽  
Author(s):  
Qi Qian ◽  
Lei Peng ◽  
Yu Cui ◽  
Liping Sun ◽  
Jinyan Du ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Future Application ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
The Future

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.

Structural Electronic and Optical Properties of MgO, CaO and SrO Binary Compounds: Comparison Study

2016 ◽  
Vol 257 ◽  
pp. 123-126 ◽  
Author(s):  
Salima Labidi ◽  
Jazia Zeroual ◽  
Malika Labidi ◽  
Kalthoum Klaa ◽  
Rachid Bensalem
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Density Functional ◽  
Local Density ◽  
Alternative Form ◽  
Full Potential ◽  
Generalized Gradient ◽  
Electronic And Optical Properties ◽  
Optical Dielectric Constant ◽  
Reported Data

First-principles calculations for electronic and optical properties under pressure effect of MgO, SrO and CaO compounds in the cubic structure, using a full relativistic version of the full-potential augmented plane-wave (FP-LAPW) method based on density functional theory, within the local density approximation (LDA) and the generalized gradient approximation (GGA), have been reported. Furthermore, band structure calculations have been investigated by the alternative form of GGA proposed by Engel and Vosko (GGA-EV) and modified by Becke-Johnson exchange correlation potential (MBJ-GGA). All calculated equilibrium lattices, bulk modulus and band gap at zero pressure are find in good agreement with the available reported data. The pressure dependence of band gap and the static optical dielectric constant are also investigated in this work.

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