Enhanced electrical and luminescent performance of a porous silicon/MEH-PPV nanohybrid synthesized by anodization and repeated spin coating

RSC Advances ◽  
2015 ◽  
Vol 5 (121) ◽  
pp. 99892-99898 ◽  
Author(s):  
A. M. S. Salem ◽  
F. A. Harraz ◽  
S. M. El-Sheikh ◽  
H. S. Hafez ◽  
I. A. Ibrahim ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Spin Coating ◽  
Hydrofluoric Acid ◽  
Crystalline Silicon ◽  
Electrochemical Anodization ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Pore Sizes ◽  
Wide Range

The electrochemical anodization of a single crystalline silicon in hydrofluoric acid-based solution leads to the formation of porous silicon (PSi) with tunable pore sizes and morphology for a wide range of technological applications.

scholarly journals An Experiment-Based Profile Function for the Calculation of Damage Distribution in Bulk Silicon Induced by a Helium Focused Ion Beam Process

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2306 ◽  
Author(s):  
Qianhuang Chen ◽  
Tianyang Shao ◽  
Yan Xing
Keyword(s):  
Beam Energy ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Single Crystalline Silicon ◽  
Nanostructure Fabrication ◽  
Profile Function ◽  
Single Crystalline ◽  
Prediction Function ◽  
Wide Range

The helium focused ion beam (He-FIB) is widely used in the field of nanostructure fabrication due to its high resolution. Complicated forms of processing damage induced by He-FIB can be observed in substrates, and these damages have a severe impact on nanostructure processing. This study experimentally investigated the influence of the beam energy and ion dose of He-FIB on processing damage. Based on the experimental results, a prediction function for the amorphous damage profile of the single-crystalline silicon substrate caused by incident He-FIB was proposed, and a method for calculating the amorphous damage profile by inputting ion dose and beam energy was established. Based on one set of the amorphous damage profiles, the function coefficients were determined using a genetic algorithm. Experiments on single-crystalline silicon scanned by He-FIB under different process parameters were carried out to validate the model. The proposed experiment-based model can accurately predict the amorphous damage profile induced by He-FIB under a wide range of different ion doses and beam energies.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Dynamic Crack Propagation in Single-Crystalline Silicon

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch
Keyword(s):  
Crack Propagation ◽  
Crystalline Silicon ◽  
Potential Drop ◽  
Tensile Tests ◽  
Terminal Velocity ◽  
Dynamic Crack Propagation ◽  
Dynamic Crack ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Crack Propagation Velocity

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

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