Polyimide (PI) high-quality polymer dielectric films with the features of anti-solvents and large-area consistency for field-effect transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 88059-88062 ◽  
Author(s):  
Yunze Li ◽  
Deyang Ji ◽  
Huanli Dong ◽  
Jingze Li ◽  
Wenping Hu

Solvent treated and untreated polyimide dielectric films show the same smooth surface, and the electrical performances of organic field-effect transistors over a large area are identical.

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.


2016 ◽  
Vol 28 ◽  
pp. 139-146 ◽  
Author(s):  
Yonghwa Baek ◽  
Sooman Lim ◽  
Lae Ho Kim ◽  
Seonuk Park ◽  
Seung Woo Lee ◽  
...  

2016 ◽  
Vol 2 (4) ◽  
pp. 1500349 ◽  
Author(s):  
Jie Liu ◽  
Chen-Huan Wang ◽  
Chang-Hai Liu ◽  
Qin-Liang Li ◽  
Xu Gao ◽  
...  

2013 ◽  
Vol 25 (15) ◽  
pp. 2229-2233 ◽  
Author(s):  
Mao Wang ◽  
Jie Li ◽  
Guangyao Zhao ◽  
Qinghe Wu ◽  
Yangguang Huang ◽  
...  

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