High temperature dielectric relaxation anomalies in Ca0.9Nd0.1Ti0.9Al0.1O3−δ single crystals

RSC Advances ◽  
2015 ◽  
Vol 5 (96) ◽  
pp. 78414-78421 ◽  
Author(s):  
G. Murugesan ◽  
R. Nithya ◽  
S. Kalainathan ◽  
Shamima Hussain
Keyword(s):  
High Temperature ◽  
Dielectric Relaxation ◽  
Single Crystals ◽  
Room Temperature ◽  
Dielectric Studies ◽  
Floating Zone ◽  
Temperature Range

We herein report dielectric studies on Ca0.9Nd0.1Ti0.9Al0.1O3−δ single crystals grown by the optical floating zone technique in the temperature range from room temperature to 660 K.

Effect of Defects on Dielectric Properties in KTiOPO4, KTiOAsO4, RbTiOAsO4 and CsTiOAsO4 Single Crystals

1996 ◽  
Vol 453 ◽  
Author(s):  
A. R. Guo ◽  
Z. -Y. Cheng ◽  
R. S. Katiyar ◽  
Ruyan Guo ◽  
A. S. Bhalla
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Dielectric Relaxation ◽  
Relaxation Process ◽  
Single Crystals ◽  
Cage Structure ◽  
Dielectric Relaxation Process ◽  
Alkali Ions ◽  
Temperature Range ◽  
Temperature Relaxation

AbstractDielectric measurements were carried out in single crystals of KTiOPO4, KTiOAsO4, RbTiOAsO4 and CsTiOAsO4. All of the materials exhibit a clear dielectric relaxation process in the low temperature range and a conductance mechanism in the high temperature range. The dielectric relaxation process can be well described by the Debye dielectric model with an activation energies of 0.8 eV, 0.5 eV and 0.4 eV respectively. The relaxation process is associated with the deviation of the alkali ions from its ideal lattice positions. The high temperature conductance is associated with the motion of the alkali ions from one lattice site to another. Therefore, both the low temperature relaxation process and the high temperature conductance originate from different features of defect behavior of alkali ions in the cage structure of these materials.

scholarly journals PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3758-3763 ◽  
Author(s):  
AUGUST YURGENS ◽  
DAG WINKLER ◽  
TORD CLAESON ◽  
SEONG-JU HWANG ◽  
JIN-HO CHOY
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
Unit Cell ◽  
Superconducting Gap ◽  
Axis Direction ◽  
Temperature Range ◽  
Dynamic Conductance

The c-axis tunneling properties of both pristine Bi2212 and its HgBr 2 intercalate have been measured in the temperature range 4.2-250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c-axis direction have been observed. The dynamic conductance d I/ d V(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting that a coupling between CuO 2-bilayers has little effect on the pseudogap.

Structural-phase transition in (Cu2Te)2−x(ZnTe)x at high temperature

2021 ◽  
pp. 2150113
Author(s):  
H. B. Gasimov ◽  
R. M. Rzayev
Keyword(s):  
Phase Transition ◽  
Phase Transitions ◽  
High Temperature ◽  
Single Crystals ◽  
Structural Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Range ◽  
Xrd Study ◽  
Xrd Method

Cu2Te single crystal was grown by the Bridgman method. X-ray diffraction (XRD) study of Cu2Te single crystals in the temperature range of 293–893 K was performed and possible phase transitions in the mentioned range of temperature have been investigated. (Cu2Te)[Formula: see text](ZnTe)[Formula: see text] single crystals also were grown with [Formula: see text], 0.05, 0.10 concentrations and structural properties of the obtained single crystals were investigated by the XRD method in the temperature range 293–893 K. Lattice parameters and possible phase transitions in the mention temperature range were determined for (Cu2Te)[Formula: see text](ZnTe)[Formula: see text] single crystals for [Formula: see text], 0.05, 0.10 concentrations.

Plastic Deformation of Mo(Si,Al)2 Single Crystals with the C40 Structure

1996 ◽  
Vol 460 ◽  
Author(s):  
M. Moriwaki ◽  
K. Ito ◽  
H. Inui ◽  
M. Yamaguchi
Keyword(s):  
Single Crystals ◽  
Deformation Behavior ◽  
Basal Slip ◽  
Room Temperature ◽  
Slip Systems ◽  
Temperature Range ◽  
Al Content ◽  
Partial Dislocations ◽  
Increasing Temperature ◽  
Critical Resolved Shear Stress

ABSTRACTThe deformation behavior of single crystals of Mo(Si,Al)2 with the C40 structure has been studied as a function of crystal orientation and Al content in the temperature range from room temperature to 1500°C in compression. Plastic flow is possible only above 1100°C for orientations where slip along <1120> on (0001) is operative and no other slip systems are observed over whole temperature range investigated. The critical resolved shear stress for basal slip decreases rapidly with increasing temperature and the Schmid law is valid. Basal slip appears to occur through a synchroshear mechanism, in which a-dislocations (b=1/3<1120>) dissociate into two synchro-partial dislocations with the identical Burgers vector(b*1/6<1120>) and each synchro-partial further dissociates into two partials on two adjacent planes.

Plastic Deformations in L10-Ordered Single Crystals with their c/a Ratios Less than Unity

2007 ◽  
Vol 561-565 ◽  
pp. 459-462
Author(s):  
Katsushi Tanaka ◽  
Hiromitsu Ide ◽  
Yoshinori Sumi ◽  
Kyosuke Kishida ◽  
Haruyuki Inui
Keyword(s):  
Shear Stress ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
The Other ◽  
Compressive Deformation ◽  
Positive Temperature ◽  
Plastic Deformations ◽  
Temperature Range ◽  
Critical Resolved Shear Stress

Compressive deformation of L10-ordered single crystals of FePd whose c/a ratio less than unity have been investigated from room temperature to 823 K. The results show that the critical resolved shear stress (CRSS) for octahedral glide of ordinary dislocations is smaller than that of super-lattice dislocations in all the temperature range investigated, that is the opposite sense to the case of Ti-56 mol% Al. The CRSS for ordinary dislocations virtually independent to the temperature. On the other hand, the CRSS for super dislocations exhibits a weak positive temperature dependence from room temperature up to 573 K and decreases in higher temperatures.

High Temperature Bonding Effect of the Room-Temperature-Curing Phosphate Adhesive for C/C Composites

2016 ◽  
Vol 680 ◽  
pp. 179-183 ◽  
Author(s):  
Ming Chao Wang ◽  
Meng Meng Zhuang ◽  
Xin Tao ◽  
Xi Qing Xu ◽  
Hai Tao Geng ◽  
...  
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
Thermal Cycling ◽  
Bonding Strength ◽  
Room Temperature ◽  
Temperature Range ◽  
Heat Resistant ◽  
Bonding Effect ◽  
Temperature Shear

A heat-resistant phosphate adhesive was developed for joining and repairing of C/C composites. The high-temperature bonding effect for both cured adhesive and 1300°C-calcined adhesive had been evaluated through testing high-temperature shear strength of corresponding joints. The results showed that the bonding strength of cured adhesive decreased from 7.9 MPa at RT to 0.9 MPa at 1300°C, while that of 1300°C-calcined adhesive could maintain about 4 MPa at temperature range from RT to 700°C and then decreased to 1.7 MPa at 1300°C. Besides, with the increasing thermal cycling times at 1300°C, the high-temperature bonding strength at this temperature could maintain at about 2.3 MPa.

Influence of Dislocation Mobility on Room and High Temperature Ductility of -Oriented Nial Single Crystals

1994 ◽  
Vol 364 ◽  
Author(s):  
M. A. Morris ◽  
J. P. Perez ◽  
R. Darolia
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Room Temperature ◽  
Tensile Tests ◽  
Slip Systems ◽  
Dislocation Mobility ◽  
Screw Dislocations ◽  
Large Density ◽  
Thin Foils

AbstractThe dislocation configurations produced by room and high temperature compression of <100> oriented single crystals of binary NiAl and in those containing iron and hafnium additions have been analysed and compared to those obtained by hardness indentation and TEM insitu tensile tests. Kinking occurs during room temperature compression such that <100> dislocations are activated in all cases but the iron-containing alloy also exhibited a large density of <111> screw dislocations. The latter however, appear immobile when they are created by hardness indentations of thin foils, while only pile-ups of <100> segments can propagate. Similarly, although different slip systems are present after high temperature compression, only <100> dislocation segments have been confirmed to be mobile after room temperature hardness indentation of these predeformed thin foils. The improvement in ductility observed at room temperature in the predeformed specimens of the binary and the iron containing alloys has been attributed to the increased production of these mobile <100> dislocations.

Floating zone growth and high-temperature hardness of NbB2 and TaB2 single crystals

1998 ◽  
Vol 194 (3-4) ◽  
pp. 430-433 ◽  
Author(s):  
S Otani ◽  
M.M Korsukova ◽  
T Mitsuhashi
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Floating Zone ◽  
Zone Growth
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