Highly transparent conducting cerium incorporated CdO thin films deposited by a spray pyrolytic technique

RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102741-102749 ◽  
Author(s):  
P. Velusamy ◽  
R. Ramesh Babu ◽  
K. Ramamurthi ◽  
M. S. Dahlem ◽  
E. Elangovan
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Cadmium Oxide ◽  
Low Level ◽  
Transparent Conducting ◽  
Cdo Thin Films

In the present work, a spray pyrolysis technique was employed to deposit cerium (Ce) doped cadmium oxide (CdO) thin films with low level doping concentrations (0.25, 0.50, 0.75 and 1.0 wt%).

scholarly journals Optical and Electrical Characteristics of CdO thin films deposited by Spray Pyrolysis Method

1970 ◽  
Vol 32 (1) ◽  
pp. 97-105 ◽  
Author(s):  
MM Islam ◽  
MR Islam ◽  
J Podder
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Cadmium Oxide ◽  
Optical Absorption Coefficient ◽  
Spray Pyrolysis Method ◽  
Pyrolysis Method ◽  
Sem Micrograph ◽  
Cdo Thin Films

Cadmium oxide (CdO) thin films have been deposited by a locally developed spray pyrolysis method onto glass substrate at 473K. The optical and electrical properties of the as-deposited and annealed films are studied in details. The surface morphology of the samples was studied by scanning electron microscopy (SEM). The SEM micrograph of as-deposited film shows uniform deposition over the substrate well. The optical absorption coefficient (α) of the CdO films was determined from transmittance spectra in the range of wavelength 450 - 650nm. For different thicknesses (130nm ~ 380nm) of as-deposited films, the direct band gap is found in the range of 2.40 ~2.51 eV and indirect band gap in the range of 1.97 ~ 2.20 eV. Resistivity (ρ) of CdO thin film was measured in the temperature range of 303 to 553K. The resistivity of the films of different thickness initially increases with increase in temperature and reaches a maximum at 430K and then decreases with further increase of temperature. The resistivity of the film exhibits metallic behaviour up to 430 K and above that the film behaves like a semiconductor. Activation energy (ΔE) in the semiconductor region is found in the range from 0.049 to 0.075 eV for films of thickness ranging from 160 - 285 nm. Keywords: Spray pyrolysis, CdO, Resistivity, Optical band gap, Activation energy doi: 10.3329/jbas.v32i1.2447 Journal of Bangladesh Academy of Sciences, Vol. 32, No. 1, 97-105, 2008

Effect of Molarity of Precursor Solution on Nanocrystalline Zinc Oxide Thin Films

2009 ◽  
Vol 293 ◽  
pp. 99-105 ◽  
Author(s):  
Girjesh Singh ◽  
S.B. Shrivastava ◽  
Deepti Jain ◽  
Swati Pandya ◽  
V. Ganesan
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Zno Films ◽  
Scale Production ◽  
Transparent Conducting ◽  
Wide Range

During the last two decades, the use of transparent conducting films of non-stoichiometric and doped metallic oxides for the conversion of solar energy into electrical energy has assumed great significance. A variety of materials, using various deposition techniques, has been tried for this purpose [1-3]. Among these various materials, zinc oxide (ZnO) is one of the prominent oxide semiconductors suitable for photovoltaic applications because of its high electrical conductivity and optical transmittance in the visible region of the solar spectrum [4]. Furthermore, thin films of ZnO have shown good chemical stability against hydrogen plasma, which is of prime importance in a-Si:H-based solar-cell fabrication. Thus, zinc oxide can serve as a good candidate for replacing SnO2 and indium tin oxide (ITO) films in Si:H-based solar cells. One of the outstanding features of ZnO is its large excitonic binding energy, i.e. 60meV, leading to the existence of excitons at room temperature and even at higher temperatures [5-8]. These unique characteristics have generated a wide range of applications of ZnO. For example, gas sensors [9], surface acoustic devices [10], transparent electrodes and solar cells. Many techniques are used for preparing the transparent conducting ZnO films, such as RF sputtering [11], evaporation [12], chemical vapour deposition [13], ion beam sputtering [14] and spray pyrolysis [15–18]. Among these, the spray pyrolysis technique has attracted considerable attention due to its simplicity and large-scale production combined with low-cost fabrication. By using this technique, one can produce large-area coatings without any need for ultra-high vacuum. Thus, the capital cost and the production cost of high-quality zinc oxide semiconductor thin films are lowest among all other techniques. In the present work, we have synthesized ZnO films by using the spray pyrolysis technique. A number of films have been prepared by changing the molarity of the precursor solution. The prepared films have been characterized with regard to their structural, morphological and electrical properties.

Enhancing resistive-type hydrogen gas sensing properties of cadmium oxide thin films by copper doping

2018 ◽  
Vol 42 (2) ◽  
pp. 1457-1466 ◽  
Author(s):  
K. Sankarasubramanian ◽  
P. Soundarrajan ◽  
T. Logu ◽  
K. Sethuraman ◽  
K. Ramamurthi
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Spray Pyrolysis Technique ◽  
Cadmium Oxide ◽  
Hydrogen Gas ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates ◽  
Gas Sensing Properties ◽  
Amorphous Glass ◽  
Cdo Thin Films

The pure and Cu-doped CdO thin films with various doping concentrations (0.5 to 2 wt%) were deposited on amorphous glass substrates by a chemical spray pyrolysis technique for hydrogen gas sensor application.

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