Surface-growth-mode-induced strain effects on the metal–insulator transition in epitaxial vanadium dioxide thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (98) ◽  
pp. 80122-80128 ◽  
Author(s):  
Mengmeng Yang ◽  
Yuanjun Yang ◽  
Bin Hong ◽  
Liangxin Wang ◽  
Zhenlin Luo ◽  
...  
Keyword(s):  
Vanadium Dioxide ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Epitaxial Films ◽  
Surface Growth ◽  
Growth Mode ◽  
Metal Insulator ◽  
Mismatch Strain ◽  
Lattice Mismatch Strain ◽  
Vanadium Dioxide Thin Films

The surface growth mode can induce the anomalous compressive strain in thicker VO2/Al2O3 epitaxial films, which can't be explained by conventional epitaxial lattice-mismatch. Strain may be an effective tool for manipulating MIT of the VO2 films.

Effect of Lattice Mismatch Strain Grading on the Electromechanical Behavior of Functionally Graded Quantum Dots

2018 ◽  
Vol 759 ◽  
pp. 71-75 ◽  
Author(s):  
Peter L. Bishay ◽  
Bhavin Sampat ◽  
Jan Sladek ◽  
Ernian Pan ◽  
Vladimir Sladek
Keyword(s):  
Material Properties ◽  
Lattice Mismatch ◽  
Growth Direction ◽  
Functionally Graded ◽  
Tuning Parameter ◽  
Mismatch Strain ◽  
Electromechanical Behavior ◽  
Mechanical Models ◽  
Lattice Mismatch Strain ◽  
Fully Coupled

A fully coupled thermo-electro-mechanical models of cylindrical and truncated conical GaN/AlN Functionally Graded Quantum Dot (FGQD) systems with and without WL are analyzed in this study to determine the effect of lattice mismatch strain grading on the electromechanical behavior of the FGQD system. This has a technological and fundamental importance because the production methodology adopted for manufacturing QDs enables the composition of the QD material to be graded in the growth direction, so the material properties as well as the induced mismatch strain between the QD and the carrier matrix are accordingly graded. The power law is used to describe the grading function. Based on the obtained results, grading of material properties and lattice mismatch strain have significant effect on the distribution of the electromechanical quantities inside the QD and can be used as another tuning parameter in the design of QD systems.

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