Spontaneous hyper-branching in ZnO nanostructures: morphology dependent electron emission and light detection

RSC Advances ◽  
2015 ◽  
Vol 5 (99) ◽  
pp. 81176-81187 ◽  
Author(s):  
Shreyasi Pal ◽  
Soumen Maiti ◽  
Uday Narayan Maiti ◽  
Kalyan Kumar Chattopadhyay
Keyword(s):  
Field Emission ◽  
Electron Emission ◽  
Intrinsic Defect ◽  
Electron Field Emission ◽  
Zno Nanostructures ◽  
Ambient Conditions ◽  
Light Detection ◽  
Chemical Approach ◽  
Electron Field ◽  
Wet Chemical

The structure and intrinsic defect-induced electron field emission and photodetection are monitored in ZnO nanoforms with assorted morphology prepared in ambient conditions via a facile wet chemical approach.

Optical and Electron Emission Properties of h-BN Films Codoped with Mg and O Atoms

2013 ◽  
Vol 566 ◽  
pp. 175-178
Author(s):  
Shinji Ohtani ◽  
Kenkichiro Kobayashi
Keyword(s):  
Electric Field ◽  
Field Emission ◽  
Electron Emission ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Electron Field ◽  
Quartz Substrates ◽  
Lower Electric Field

Films of hexagonal BN (h-BN) codoped with Mg and O atoms were grown on n-type Si and quartz substrates heated at 500 °C by sputtering targets consisting of h-BN and MgO powders. An absorption is seen at a wavelength < 400 nm for h-BN films prepared in an Ar atmosphere. In contrast, films prepared from the target containing 0.25 mol% MgO in an atmosphere of Ar + 1% O2 shows an absorption at a wavelength < 260 nm and an electron field emission at a lower electric field of 3.6 V/μm.

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

2005 ◽  
Vol 862 ◽  
Author(s):  
Yumei Xing ◽  
Jihua Zhang ◽  
Yuehui Yu ◽  
Zhaorui Song ◽  
Dashen Shen
Keyword(s):  
High Temperature ◽  
Field Emission ◽  
Electron Emission ◽  
High Intensity ◽  
Silicon Layer ◽  
Implantation Dose ◽  
Emission Characteristics ◽  
Electron Field Emission ◽  
Electron Field ◽  
Post Implantation

AbstractHigh intensity electron field emissions were obtained from SiC/Si heterostructures formed by high temperature carbon implantation into silicon and subsequently etching of the top silicon layer. Implantation processes were performed at 700 °C with a dose of 3.0 to 8.0 x 1017 ions/cm2. Post-implantation annealing in argon at 1250 °C for 5h was done for partial samples. β-SiC precipitates were easily formed and embedded in silicon at the interface of SiC/Si heterostructures during high temperature carbon implantation for all samples. The densely distributed small protrusions led to efficient electron emission. Implantation dose scarcely impacted the electron emission characteristics when it reached to a definite value. After annealing, the density of protrusions at the interface of SiC/Si heterostructures became smaller since β-SiC precipitates were grown into larger sizes, which caused to a relatively inefficient electron emission.

Electron Field Emission Characteristics of Silicon Nanodots Formed by the LPCVD Technique

2011 ◽  
Vol 49 (4) ◽  
pp. 342-347
Author(s):  
Kyoungwan Park ◽  
Seungman An ◽  
Taekyung Yim ◽  
Kyungsu Lee ◽  
Jeongho Kim ◽  
...  
Keyword(s):  
Field Emission ◽  
Emission Characteristics ◽  
Electron Field Emission ◽  
Electron Field

Electron field emission from intentionally introduced particles on extended niobium surfaces

1986 ◽  
Vol 59 (11) ◽  
pp. 3851-3860 ◽  
Author(s):  
R. J. Noer ◽  
Ph. Niedermann ◽  
N. Sankarraman ◽  
O/. Fischer
Keyword(s):  
Field Emission ◽  
Electron Field Emission ◽  
Electron Field
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