Insight into the origin of ferromagnetism in Fe-doped ZnO diluted magnetic semiconductor nanocrystals: an EXFAS study of local structure

RSC Advances ◽  
2015 ◽  
Vol 5 (115) ◽  
pp. 94658-94669 ◽  
Author(s):  
Shiv Kumar ◽  
Nidhi Tiwari ◽  
S. N. Jha ◽  
S. Chatterjee ◽  
D. Bhattacharyya ◽  
...  

XANES study at Fe edge (a) and signature of ferromagnetism (b) of Zn1−xFexO nanoparticles.

RSC Advances ◽  
2016 ◽  
Vol 6 (109) ◽  
pp. 107816-107828 ◽  
Author(s):  
Shiv Kumar ◽  
N. Tiwari ◽  
S. N. Jha ◽  
S. Chatterjee ◽  
D. Bhattacharyya ◽  
...  

Structural, local structural and optical properties of sol–gel derived Zn1−xCrxO (0 ≤ x ≤ 0.06) nanoparticles have been thoroughly studied by several complementary techniques.


2012 ◽  
Vol 727-728 ◽  
pp. 511-515 ◽  
Author(s):  
R. Torquato ◽  
E. Shirsath Sagar ◽  
Ruth Herta Goldsmith Aliaga Kiminami ◽  
Ana Cristina Figueiredo de Melo Costa

ZnO is a semiconductor that can be doped with transition metal ions, and thus becomes feasible to use in the diluted magnetic semiconductor (DMS), or semiconductor with magnetic properties. In this work we have studied the influence of doping of Ni+2on the structural, morphological and magnetic properties of Zn1-xNixO system, to x = 0.07, 0.1 and 0.2 mol of Ni+2synthesized by combustion reaction. The systems were characterized by XRD, SEM and VSM. The maximum temperatures ranged from 639 K and 683 K. All systems showed a majority phase formation of ZnO, with the presence of the second phase NiO. The crystallite size for the majority phase varied between 49 and 56nm. All systems have resulted in samples with a morphology consisting of dense clusters, formed by particles pre-sintered and shaped roughly hexagonal plates. The magnetic measurements showed that the values of saturation magnetization lies between 4.6 to 28.5emu/g, remanent magnetization of 0.01 to 0.3 emu/g, coercive force values varies between 12.7 and 62.4 Oe and Curie temperature ranging from 308 to 311K.


Nanocrystals ◽  
10.5772/10094 ◽  
2010 ◽  
Author(s):  
Noelio Oliveira ◽  
Ernesto Soares De Freitas Neto ◽  
Ricardo Souza Da Silv

2012 ◽  
Vol 1394 ◽  
Author(s):  
Mei Fang ◽  
Wolfgang Voit ◽  
Adrica Kyndiah ◽  
Yan Wu ◽  
Lyubov Belova ◽  
...  

ABSTRACTRoom temperature magnetic properties of un-doped, as well as 10 at.% Fe-doped ZnO and MgO single-pass layer of ink-jet printed thin films have been investigated to obtain insight into the role of the band gaps and mechanisms for the origin of ferromagnetic order in these materials. It is found that on doping with Fe, the saturation magnetization is enhanced by several-fold in both systems when compared with the respective un-doped thin films. For a “28 nm thick film of Fe-doped ZnO (Diluted Magnetic Semiconductor, DMS) we observe an enhanced moment of 0.465μB /Fe atom while it is around 0.111μB/Fe atom for the doped MgO (Diluted Magnetic Insulator, DMI) film of comparable thickness. Also, the pure ZnO is far more ferromagnetic than pure MgO at comparable low film thicknesses which can be attributed to defect induced magnetism originating from cat-ion vacancies. However, the film thickness dependence of the magnetization and the defect concentrations are found to be significantly different in the two systems so that a comparison of the magnetism becomes more complex for thicker films.


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