Temperature-dependent selectivity of bead-like TeO2 nanostructured gas sensors

RSC Advances ◽  
2015 ◽  
Vol 5 (88) ◽  
pp. 71955-71960 ◽  
Author(s):  
Sun-Woo Choi ◽  
Changhyun Jin
Keyword(s):  
Gas Sensors ◽  
Selective Detection ◽  
Temperature Dependent ◽  
P Type

The bead-like p-type TeO2 NWs are promising for the selective detection of C2H5OH, NO2, and H2S gases.

scholarly journals Decoration of CuO NWs Gas Sensor with ZnO NPs for Improving NO2 Sensing Characteristics

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2103 ◽  
Author(s):  
Tae-Hee Han ◽  
So-Young Bak ◽  
Sangwoo Kim ◽  
Se Hyeong Lee ◽  
Ye-Ji Han ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Gas Sensors ◽  
Sol Gel ◽  
Oxide Semiconductor ◽  
Zno Nps ◽  
X Ray ◽  
Semiconductor Gas Sensor ◽  
Initial Resistance ◽  
P Type ◽  
Sensing Characteristics

This paper introduces a method for improving the sensitivity to NO2 gas of a p-type metal oxide semiconductor gas sensor. The gas sensor was fabricated using CuO nanowires (NWs) grown through thermal oxidation and decorated with ZnO nanoparticles (NPs) using a sol-gel method. The CuO gas sensor with a ZnO heterojunction exhibited better sensitivity to NO2 gas than the pristine CuO gas sensor. The heterojunction in CuO/ZnO gas sensors caused a decrease in the width of the hole accumulation layer (HAL) and an increase in the initial resistance. The possibility to influence the width of the HAL helped improve the NO2 sensing characteristics of the gas sensor. The growth morphology, atomic composition, and crystal structure of the gas sensors were analyzed using field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy, and X-ray diffraction, respectively.

A NOx Sensor Based on Solid-Electrolyte Impedance Transducer

2008 ◽  
Vol 47-50 ◽  
pp. 479-482 ◽  
Author(s):  
Youichi Shimizu ◽  
Satoko Takase ◽  
Daisuke Koba
Keyword(s):  
Solid Electrolyte ◽  
Selective Detection ◽  
Ceramic Oxides ◽  
Sensing Mechanism ◽  
Sensor Device ◽  
Nox Sensor ◽  
Type Semiconductor ◽  
Ionic Solid ◽  
P Type ◽  
Perovskite Type

A new solid-electrolyte impedance-metric NOx sensor device composed of a lithium ionic solid electrolyte: Li1.5Al0.5Ti1.5(PO4)3 (LATP) as a transducer and ceramic oxides (perovskite-type oxides, TiO2, SnO2, etc) as a receptor, respectively, have been systematically investigated for the detection of NOx (NO and NO2 ) in the range 10 – 200 ppm at 400 - 500°C. Responses of the sensors were able to divide component between resistance and capacitance, and it was found that the device was applicable to the selective detection of NO or NO2 concentration in each ingredient. Especially, those using TiO2, SnO2 (n-type semiconductor) and perovskite-type oxides (LaCoO3, LaNiO3 and LaCrO3) based receptors gave good responses to NO and NO2. It was also found that the responses were different between n-type or p-type semiconductors, in which we tried to elucidate the sensing mechanism

On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
Mark S. Rodder ◽  
Dimitri A. Antoniadis
Keyword(s):  
Numerical Calculation ◽  
Polycrystalline Silicon ◽  
Amorphous Region ◽  
Defect States ◽  
Temperature Dependent ◽  
Step Process ◽  
Dependent Potential ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
P Type

ABSTRACTIt is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

2015 ◽  
Vol 1770 ◽  
pp. 25-30 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C.L. Littler
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Noise Component ◽  
Variable Range ◽  
Noise Measurements ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

scholarly journals Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

AIP Advances ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 105204
Author(s):  
Yaopeng Zhao ◽  
Chong Wang ◽  
Xuefeng Zheng ◽  
Yunlong He ◽  
Xiaohua Ma ◽  
...  
Keyword(s):  
Temperature Dependent ◽  
Si Substrates ◽  
High K ◽  
P Type

scholarly journals H2S Sensing in Dry and Humid H2 Environment With p-Type CuO Thick-Film Gas Sensors

2018 ◽  
Vol 18 (9) ◽  
pp. 3502-3508 ◽  
Author(s):  
Barbara Urasinska-Wojcik ◽  
Julian W. Gardner
Keyword(s):  
Thick Film ◽  
Gas Sensors ◽  
P Type

Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP

2013 ◽  
Author(s):  
L. Dasaradha Rao ◽  
N. Ramesha Reddy ◽  
A. Ashok Kumar ◽  
V. Rajagopal Reddy
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Rare Earth Metal ◽  
Schottky Contact ◽  
Earth Metal ◽  
Temperature Dependent ◽  
P Type
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