Properties of indium doped nanocrystalline ZnO thin films and their enhanced gas sensing performance

RSC Advances ◽  
2015 ◽  
Vol 5 (75) ◽  
pp. 61230-61238 ◽  
Author(s):  
Sumati Pati ◽  
P. Banerji ◽  
S. B. Majumder
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Sensing ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Indium Concentration ◽  
Doped Zno ◽  
Undoped Counterpart ◽  
Sensing Performance

Enhancement of gas sensing performance of indium doped ZnO thin film at optimal indium concentration as compared to its undoped counterpart.

scholarly journals Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

Materials ◽  
2016 ◽  
Vol 9 (2) ◽  
pp. 87 ◽  
Author(s):  
Heberto Gómez-Pozos ◽  
Emma Arredondo ◽  
Arturo Maldonado Álvarez ◽  
Rajesh Biswal ◽  
Yuriy Kudriavtsev ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Sol Gel Process ◽  
Doped Zno ◽  
Sensing Performance

Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Glass Substrate ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

Characterization and hydrogen gas sensing performance of Al-doped ZnO thin films synthesized by low energy plasma focus device

2016 ◽  
Vol 689 ◽  
pp. 740-750 ◽  
Author(s):  
Mohammad Taghi Hosseinnejad ◽  
Mahmood Ghoranneviss ◽  
Mohammad Reza Hantehzadeh ◽  
Elham Darabi
Keyword(s):  
Thin Films ◽  
Plasma Focus ◽  
Gas Sensing ◽  
Hydrogen Gas ◽  
Low Energy ◽  
Plasma Focus Device ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Sensing Performance

scholarly journals Recent advances in Performance and effect of Zr doping with ZnO thin film sensor in Ammonia Vapour Sensing

2021 ◽  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Sensing ◽  
Wide Band ◽  
Fast Response ◽  
Sem Analysis ◽  
Zno Thin Film ◽  
Film Sensor ◽  
Doped Zno ◽  
Silar Technique

<p>Pure and Zr doped ZnO thin films were prepared using SILAR technique. The influence of Zr doping on structural, morphological, optical and gas sensing properties of ZnO has been reported. X-ray diffraction study confirmed the formation of wurtzite structure of ZnO thin film (JCPDS 36-1451) fabricated by SILAR technique and the caluculated crystallites size of pure and doped ZnO were 39 and 36 nm respectively . SEM analysis of thin films has shown a completely different surface morphology. EDAX spetrum cnfirmed the presence of different compositional element in the fabriated thin films. Zr (3 wt%) doped ZnO thin film exhibited the best properties with a good transmittance and it has wide band gap of 3.26 eV. Photoluminescence emissions indicated increase in concentration of oxygen vacancies with introduction of dopant. NH3 vapour sensors were fabricated out of fabricated samples and it was observed that doped samples have significantly high sensing response, good selectivity, fast response and recovery time to ammonia vapoutr at room temperature.</p>

scholarly journals Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
I. Saurdi ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
M. Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Nanorod ◽  
Zno Thin Film ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Doped Zno

Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

scholarly journals Sensing of Ethanol with Nanosize Fe-ZnO Thin Films

2009 ◽  
Vol 2009 ◽  
pp. 1-3 ◽  
Author(s):  
G.-H. Kuo ◽  
H. Paul Wang ◽  
H. H. Hsu ◽  
James Wang ◽  
Y. M. Chiu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Sensitivity ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Main Compound ◽  
Doped Zno ◽  
Very High

Sensing of ethanol with iron doped ZnO (Fe-ZnO) thin films has been studied in this work. By X-ray diffraction spectroscopy, it is found that ZnO is the main compound in the low-iron (<10%) doped ZnO thin films.ZnFe2O4is also found as 20–50% of iron are doped on the thin films. The 5% Fe-ZnO thin film has a very high sensitivity (Rair/Rethanol>70) to 1000 ppm of ethanol at 300 K. It seems that iron can promote the sensivity of the ZnO thin film. The thin film doped with a greater amount (20–50%) of iron has, however, a much less sensitivity (<15) to ethanol. The chemical interactions between oxygen of ethanol and zinc on the Fe-ZnO thin film cause changes of the bond distances of Zn–O and Fe–O in the thin films to 1.90 and 1.98 Å which can be restored to 1.91 and 1.97 Å, respectively, in the absence of ethanol.

Infrared Lattice Vibrations of Nitrogen-doped ZnO Thin Films

2007 ◽  
Vol 1035 ◽  
Author(s):  
Makoto Hirai ◽  
Ashok Kumar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Bond Length ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Lattice Vibrations ◽  
Zno Thin Film ◽  
Ft Ir ◽  
Doped Zno ◽  
Axis Length

AbstractNitrogen (N) is the most promising p-type dopant for zinc oxide (ZnO), and its bonding state must be governed by the substitution of N atoms into anion sites. We have synthesized un-doped ZnO and N-doped ZnO thin films by utilizing a pulsed laser deposition (PLD) method. The N-doped ZnO thin film possessed shorter c-axis length than the un-doped ZnO thin film. This fact seems to be owing to that Zn-N bond length is shorter than Zn-O bond length in wurtzite structure. Besides, from the result of Fourier transform infrared (FT-IR) measurement, the absorption peak of the N-doped ZnO thin film emerged at 406 cm−1, and was attributed to transverse optical (TO) phonon of E1 mode. The infrared lattice vibrations of the N-doped ZnO thin films can be induced by the complex factors consisting of not only the decreases in reduced mass and interionic distance, but also the increase in covalency.

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