Role of substrate effects on the morphological, structural, electrical and thermoelectrical properties of V2O5thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (65) ◽  
pp. 52602-52611 ◽  
Author(s):  
Bilal Ahmad Bhat ◽  
G. R. Khan ◽  
K. Asokan

The present work focuses on the influence of different substrates on the morphological, compositional, phase purity, structural and transport properties of vanadium pentaoxide (V2O5) thin films.

1998 ◽  
Vol 72 (8) ◽  
pp. 981-983 ◽  
Author(s):  
Y. G. Zhao ◽  
Z. W. Dong ◽  
M. Rajeswari ◽  
R. P. Sharma ◽  
T. Venkatesan

2015 ◽  
Vol 229 (7-8) ◽  
Author(s):  
Jérôme Delacotte ◽  
Dominique Langevin

AbstractThe role of condensed counterions in transport properties, such as electrical conductivity and viscosity, has been investigated with solutions of a flexible polyelectrolyte. Comparisons with existing theories are proposed. Viscosity is strongly affected by confinement in thin films, depending whether polyelectrolyte chains are adsorbed or not at the film surfaces. The role of counterion mobility is however difficult to assess because the measurements are not accurate enough. It is proposed that this role could be tested by electrical conductivity measurements.


2015 ◽  
Author(s):  
Tanveer Ahmad Dar ◽  
Arpana Agrawal ◽  
Pratima Sen

2019 ◽  
Vol 469 ◽  
pp. 643-649 ◽  
Author(s):  
K.L. Salcedo Rodríguez ◽  
G. Bridoux ◽  
S.P. Heluani ◽  
Gustavo A. Pasquevich ◽  
P.D. Esquinazi ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Robin Ahrling ◽  
Johannes Boy ◽  
Martin Handwerg ◽  
Olivio Chiatti ◽  
Rüdiger Mitdank ◽  
...  

Abstract Thin films of the wide band gap semiconductor β-Ga2O3 have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transport properties in thin films. The conductivities, Hall densities and mobilities in thin homoepitaxially MOVPE grown (100)-orientated β-Ga2O3 films were measured as a function of temperature and film thickness. At room temperature, the electron mobilities ((115 ± 10) cm2/Vs) in thicker films (>150 nm) are comparable to the best of bulk. However, the mobility is strongly reduced by more than two orders of magnitude with decreasing film thickness ((5.5 ± 0.5) cm2/Vs for a 28 nm thin film). We find that the commonly applied classical Fuchs-Sondheimer model does not explain sufficiently the contribution of electron scattering at the film surfaces. Instead, by applying an electron wave model by Bergmann, a contribution to the mobility suppression due to the large de Broglie wavelength in β-Ga2O3 is proposed as a limiting quantum mechanical size effect.


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