Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics
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A bilayer dielectric structure of MgO and ALD Al2O3 or HfO2 was used for making n-type SWCNT-TFTs at a low temperature of 120 °C.
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2019 ◽
Vol 40
(6)
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pp. 921-924
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2019 ◽
Vol 19
(3)
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pp. 1759-1763
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2019 ◽
Vol 7
(4)
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pp. 509-518
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2007 ◽
Vol 15
(12)
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pp. 1105
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