Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

Nanoscale ◽  
2015 ◽  
Vol 7 (42) ◽  
pp. 17693-17701 ◽  
Author(s):  
Guanhong Li ◽  
Qunqing Li ◽  
Yuanhao Jin ◽  
Yudan Zhao ◽  
Xiaoyang Xiao ◽  
...  

A bilayer dielectric structure of MgO and ALD Al2O3 or HfO2 was used for making n-type SWCNT-TFTs at a low temperature of 120 °C.

Nano Letters ◽  
2013 ◽  
Vol 13 (8) ◽  
pp. 3864-3869 ◽  
Author(s):  
Pak Heng Lau ◽  
Kuniharu Takei ◽  
Chuan Wang ◽  
Yeonkyeong Ju ◽  
Junseok Kim ◽  
...  

2011 ◽  
Vol 99 (7) ◽  
pp. 072110 ◽  
Author(s):  
Bhupesh Chandra ◽  
Hongsik Park ◽  
Ahmed Maarouf ◽  
Glenn J. Martyna ◽  
George S. Tulevski

2006 ◽  
Vol 40 (8) ◽  
pp. 959-967 ◽  
Author(s):  
A. Sazonov ◽  
M. Meitine ◽  
D. Stryakhilev ◽  
A. Nathan

Author(s):  
Shiheng Lu ◽  
Jorge A. Cardenas ◽  
Robyn Worsley ◽  
Nicholas X. Williams ◽  
Joseph B. Andrews ◽  
...  

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