Liquid–solid spinodal decomposition mediated synthesis of Sb2Se3 nanowires and their photoelectric behavior

Nanoscale ◽  
2015 ◽  
Vol 7 (30) ◽  
pp. 12913-12920 ◽  
Author(s):  
Yong Hun Kwon ◽  
Myoungho Jeong ◽  
Hyun Woo Do ◽  
Jeong Yong Lee ◽  
Hyung Koun Cho
Keyword(s):  
Thermal Annealing ◽  
Spinodal Decomposition ◽  
Elemental Layer

Vertically inclined Sb2Se3 nanowires were synthesized from the Sb/Sb–Se/Se stacked elemental layer only by thermal annealing at 623 K.

Crystallization kinetics of amorphous nanostructured Pd40.5Ni40.5P19 alloys

2001 ◽  
Vol 16 (3) ◽  
pp. 797-802 ◽  
Author(s):  
H. W. Ngai ◽  
C. C. Leung ◽  
W. H. Guo ◽  
H. W. Kui
Keyword(s):  
Phase Separation ◽  
Crystal Growth ◽  
Thermal Annealing ◽  
Amorphous Phase ◽  
Spinodal Decomposition ◽  
Crystallization Kinetics ◽  
Annealing Temperature ◽  
Eutectic Growth ◽  
Precipitation Reaction ◽  
Kinetics Of

When a homogeneous amorphous Pd40.5Ni40.5P19 alloy was subjected to thermal annealing for 30 min at various temperatures, novel microstructures were observed. At an annealing temperature of 603 K, phase separation of the amorphous phase dominated. At 628 K, a precipitation reaction proceeded first. After its completion, a eutectic growth set in. At 638 K, metastable spinodal decomposition occurred first, followed by a eutectic growth. Finally at 673 K, crystal growth of crystalline spinodal network was fast enough to compete with a eutectic growth.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

The birth of bubbles by spinodal decomposition: Solving the tiny bubble paradox

2020 ◽  
Author(s):  
Dork Sahagian ◽  
Tamara Carley ◽  
Anja Allabar ◽  
James Gardner ◽  
Ed Lewellin ◽  
...  
Keyword(s):  
Spinodal Decomposition

SPINODAL DECOMPOSITION OF Ni-Ti

1986 ◽  
Vol 47 (C2) ◽  
pp. C2-259-C2-264 ◽  
Author(s):  
R. GRÜNE ◽  
P. HAASEN
Keyword(s):  
Spinodal Decomposition

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Optical and Electrical Characteristics of Amorphous InGaZnO after Thermal Annealing

2008 ◽  
Author(s):  
Satoshi Taniguchi ◽  
Norihiko Yamaguchi ◽  
Takao Miyajima ◽  
Masao Ikeda
Keyword(s):  
Thermal Annealing ◽  
Electrical Characteristics ◽  
Amorphous Ingazno
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