The role of nanoscale defect features in enhancing the thermoelectric performance of p-type nanostructured SiGe alloys
A substantial enhancement in ZT ∼ 1.2 at 900 °C has been realized in p-type nanostructured Si80Ge20 alloys by creating nano-to-meso scale defect features.
2015 ◽
Vol 8
(1)
◽
pp. 267-277
◽
2020 ◽
Vol 12
(32)
◽
pp. 36186-36195
◽
Keyword(s):