In situ synthesis of a large area boron nitride/graphene monolayer/boron nitride film by chemical vapor deposition

Nanoscale ◽  
2015 ◽  
Vol 7 (17) ◽  
pp. 7574-7579 ◽  
Author(s):  
Qinke Wu ◽  
Sung Kyu Jang ◽  
Sangwoo Park ◽  
Seong Jun Jung ◽  
Hwansoo Suh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Synthesis ◽  
Nitride Film ◽  
Graphene Monolayer ◽  
Large Area ◽  
Boron Nitride Films

We describe the successful in situ chemical vapor deposition synthesis of a graphene-based heterostructure in which a graphene monolayer is protected by top and bottom boron nitride films.

Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition

2015 ◽  
Vol 26 (27) ◽  
pp. 275601 ◽  
Author(s):  
Yao Wen ◽  
Xunzhong Shang ◽  
Ji Dong ◽  
Kai Xu ◽  
Jun He ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Large Area ◽  
Cu Foil

In Situ S-Doping of Cubic Boron Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition

2010 ◽  
Vol 638-642 ◽  
pp. 2956-2961 ◽  
Author(s):  
Hang Sheng Yang ◽  
Norihiko Kurebayashi ◽  
Toyonobu Yoshida
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Cubic Phase ◽  
Film Adhesion ◽  
Boron Source ◽  
P Type

In situ sulphur doping of cubic boron nitride (cBN) films was investigated by adding H2S into a plasma-enhanced chemical vapor deposition system. It was found that the nucleation of cBN was suppressed severely with a very low H2S concentration, while cBN could be grown continuously even at a H2S concentration as high as that of the boron source after its nucleation. Accordingly, S was incorporated into cBN films meanwhile keeping the cubic phase concentration as high as 95%. And a rectification ratio of approximately 10 5 was observed at room temperature for heterojunction diodes prepared by depositing S-doped cBN films on p-type silicon substrates, which suggests the possibility of an n-type-like doping. Moreover, 1500K post annealing of cBN films in H2 atmosphere was found to be able to release the residual compressive stress evidently. Thus, film adhesion strength increased markedly, and cBN films reached a thickness over 200 nm without peeling off from silicon and quartz substrates in air after 9 months.

Thermal Stability of Cubic Boron Nitride Films Deposited by Chemical Vapor Deposition.

ChemInform ◽  
2007 ◽  
Vol 38 (2) ◽  
Author(s):  
J. Yu ◽  
Z. Zheng ◽  
H. C. Ong ◽  
K. Y. Wong ◽  
S. Matsumoto ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Boron Nitride Films ◽  
Thermal Stability Of

Chemical Vapor Deposition and Etching of High-Quality Monolayer Hexagonal Boron Nitride Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7303-7309 ◽  
Author(s):  
Peter Sutter ◽  
Jayeeta Lahiri ◽  
Peter Albrecht ◽  
Eli Sutter
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
High Quality ◽  
Boron Nitride Films
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