The first report on SILAR deposited nanostructured uranyl sulphide thin films and their chemical conversion to silver sulphide

2015 ◽  
Vol 39 (11) ◽  
pp. 8695-8702 ◽  
Author(s):  
Dipak J. Garole ◽  
Sandesh R. Tetgure ◽  
Amulrao U. Borse ◽  
Yogesh R. Toda ◽  
Vaman J. Garole ◽  
...  
Keyword(s):  
Thin Films ◽  
Free Energy ◽  
Chemical Conversion ◽  
Silar Method ◽  
First Report ◽  
Free Energy Of Formation ◽  
Layer Adsorption ◽  
Silver Sulphide ◽  
Ionic Layer ◽  
Energy Of Formation

Successive ionic layer adsorption and reaction (SILAR) method is employed to deposit nano-sized UO2S thin films and their chemical conversion to Ag2S thin films based on negative free energy of formation.

Preparation of Cu2ZnSnS4 Thin Films by Successive Ionic Layer Adsorption and Reaction (SILAR) Method for Supercapacitor Applications

2020 ◽  
Vol 20 (10) ◽  
pp. 6235-6244 ◽  
Author(s):  
A. Murugan ◽  
V. Siva ◽  
A. Shameem ◽  
S. Asath Bahadur
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Electrochemical Impedance ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Layer Adsorption ◽  
Diffraction Patterns ◽  
Czts Thin Films ◽  
Supercapacitor Applications ◽  
Ionic Layer

The Cu2ZnSnS4 (CZTS) thin films have been prepared at different deposition cycles, deposited on a glass substrate by successive ionic layer adsorption and reaction (SILAR) method followed by the annealing process at elevated temperature. The investigations on the films have been carried out to understand and confirm its structure, functional group present, crystalline morphology, optical and electrochemical behavior. The powder X-ray diffraction patterns recorded indicate that the deposited films are formed in the tetragonal structure. Other parameters like grain size, dislocation density, and microstrain are also calculated. The uniform surface of the films with spherical shaped morphology has been observed by Scanning Electron Microscopy, and the elemental compositions have been confirmed by EDAX. Electrochemical behavior such as cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge–discharge analysis have been carried out by electrochemical workstation. The modified electrode exhibits maximum specific capacitance value as 416 F/g for a pure sample. Optical studies have shown that the band gaps are estimated between 1.40 eV and 1.57 eV.

Photoelectrochemical properties of Bi 2 S 3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method

2016 ◽  
Vol 686 ◽  
pp. 684-692 ◽  
Author(s):  
Ying Wang ◽  
Jiangyu Chen ◽  
Liangxing Jiang ◽  
Kaile Sun ◽  
Fangyang Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectrochemical Properties ◽  
Silar Method ◽  
Layer Adsorption ◽  
Ionic Layer

First report on a FeS-based 2 V operating flexible solid-state symmetric supercapacitor device

2017 ◽  
Vol 1 (6) ◽  
pp. 1366-1375 ◽  
Author(s):  
Swapnil S. Karade ◽  
Pratibha Dwivedi ◽  
Sutripto Majumder ◽  
Bidhan Pandit ◽  
Babasaheb R. Sankapal
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Room Temperature ◽  
Silar Method ◽  
First Report ◽  
Layer Adsorption ◽  
Symmetric Supercapacitor ◽  
Ionic Layer

Device grade application of FeS thin film deposited by successive ionic layer adsorption and reaction (SILAR) method at room temperature.

Characterization of Dy2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method

2021 ◽  
pp. 106693
Author(s):  
P.P. Bagwade ◽  
D.B. Malavekar ◽  
S.B. Ubale ◽  
T.T. Ghogare ◽  
R.N. Bulakhe ◽  
...  
Keyword(s):  
Thin Films ◽  
Silar Method ◽  
Layer Adsorption ◽  
Ionic Layer

scholarly journals Characterization of nanocrystalline cadmium telluride thin films grown by successive ionic layer adsorption and reaction (SILAR) method

2006 ◽  
Vol 29 (2) ◽  
pp. 165-168 ◽  
Author(s):  
A. U. Ubale ◽  
R. J. Dhokne ◽  
P. S. Chikhlikar ◽  
V. S. Sangawar ◽  
D. K. Kulkarni
Keyword(s):  
Thin Films ◽  
Cadmium Telluride ◽  
Silar Method ◽  
Layer Adsorption ◽  
Ionic Layer
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