Synthesis, crystal structure, and transport properties of Cu2.2Zn0.8SnSe4−xTex (0.1 ≤ x ≤ 0.4)

2015 ◽  
Vol 44 (19) ◽  
pp. 9014-9019 ◽  
Author(s):  
Yongkwan Dong ◽  
Brian Eckert ◽  
Hsin Wang ◽  
Xiaoyu Zeng ◽  
Terry M. Tritt ◽  
...  

The synthesis, crystal structure and transport properties of Cu2.xZn0.8SnSe4−xTex (x = 0.1–0.4) series were investigated. Cu2.2Zn0.8SnSe3.7Te0.3 has a ZT value of 0.56 at 700 K, the highest ZT value thus far reported for solid-solution compositions in this material system.

2015 ◽  
Vol 3 (40) ◽  
pp. 10436-10441 ◽  
Author(s):  
Yongkwan Dong ◽  
Lukasz Wojtas ◽  
Joshua Martin ◽  
George S. Nolas

The synthesis, crystal structure, and transport properties of quaternary tetrahedral chalcogenides Cu2.1Fe0.9SnSe4, Cu2.2Fe0.8SnSe4 and Cu2.2Zn0.2Fe0.6SnSe4 were investigated. Cu2.2Fe0.8SnSe4 has a ZT value of 0.45 at 750 K, the highest ZT thus far reported at this temperature for solid–solution compositions in this material system.


2017 ◽  
Vol 46 (37) ◽  
pp. 12438-12445 ◽  
Author(s):  
B. Owens-Baird ◽  
S. Lee ◽  
K. Kovnir

Synthesis, crystal structure, and transport properties of a novel two-dimensional metal, NaCu6.3Sb3, are reported together with the solid-state transformations observed within the Na–Cu–Sb system.


CrystEngComm ◽  
2014 ◽  
Vol 16 (47) ◽  
pp. 10780-10790 ◽  
Author(s):  
Grzegorz Wesela-Bauman ◽  
Simon Parsons ◽  
Janusz Serwatowski ◽  
Krzysztof Woźniak

Compression of the crystal structure and its impact on the charge transport properties of a model borinic quinolinate system.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.


2021 ◽  
pp. 153189
Author(s):  
Pham Van Mao ◽  
Tatsumi Arima ◽  
Yaohiro Inagaki ◽  
Kazuya Idemitsu ◽  
Daisuke Akiyama ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.


Materials ◽  
2015 ◽  
Vol 8 (3) ◽  
pp. 1043-1058 ◽  
Author(s):  
David Berardan ◽  
Jing Li ◽  
Emilie Amzallag ◽  
Sunanda Mitra ◽  
Jiehe Sui ◽  
...  

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