Photoactivity and charge trapping sites in copper and vanadium doped anatase TiO2 nano-materials

2016 ◽  
Vol 6 (4) ◽  
pp. 1094-1105 ◽  
Author(s):  
Konstantinos C. Christoforidis ◽  
Marcos Fernández-García
Keyword(s):  
Charge Carrier ◽  
Metal Cluster ◽  
Cluster Formation ◽  
Charge Trapping ◽  
Anatase Tio2 ◽  
Nano Materials ◽  
Trapping Sites

Isolated dopant species and metal cluster formation regulate the photoactivity and charge carrier formation via accepting e− and eliminating Ti3+ states.

Behavior of Local Charge-Trapping Sites in La2O3–Al2O3Composite Films under Constant Voltage Stress

2007 ◽  
Vol 46 (4B) ◽  
pp. 1879-1884 ◽  
Author(s):  
Toshifumi Sago ◽  
Akiyoshi Seko ◽  
Mitsuo Sakashita ◽  
Akira Sakai ◽  
Masaki Ogawa ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Constant Voltage ◽  
Local Charge ◽  
Voltage Stress ◽  
Trapping Sites

Probing metal cluster formation in NaY zeolite by xenon-129 NMR

1988 ◽  
Vol 110 (13) ◽  
pp. 4465-4467 ◽  
Author(s):  
B. F. Chmelka ◽  
R. Ryoo ◽  
S. B. Liu ◽  
L. C. De Menorval ◽  
C. J. Radke ◽  
...  
Keyword(s):  
Metal Cluster ◽  
Cluster Formation ◽  
Nay Zeolite

Non-linear glasses by metal cluster formation: synthesis and properties

1996 ◽  
Vol 196 ◽  
pp. 79-83 ◽  
Author(s):  
G. De Marchi ◽  
F. Gonella ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
E.J. Knystautas ◽  
...  
Keyword(s):  
Metal Cluster ◽  
Cluster Formation ◽  
Non Linear

Cadmium binding and metal cluster formation in metallothionein: a differential modification study

Biochemistry ◽  
1986 ◽  
Vol 25 (8) ◽  
pp. 1975-1980 ◽  
Author(s):  
Werner R. Bernhard ◽  
Milan Vasak ◽  
Jeremias H. R. Kagi
Keyword(s):  
Metal Cluster ◽  
Cluster Formation

Vaporized-metal cluster formation and effect of kinetic energy of ionized clusters on film formation

1982 ◽  
Vol 92 (1-2) ◽  
pp. 137-146 ◽  
Author(s):  
I. Yamada ◽  
H. Takaoka ◽  
H. Inokawa ◽  
H. Usui ◽  
S.C. Cheng ◽  
...  
Keyword(s):  
Kinetic Energy ◽  
Film Formation ◽  
Metal Cluster ◽  
Cluster Formation

Charge Trapping Sites in nc-RuO Embedded ZrHfO High-k Nonvolatile Memories

2010 ◽  
Vol 1250 ◽  
Author(s):  
Chen-Han Lin ◽  
Yue Kuo
Keyword(s):  
Dielectric Film ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Mos Capacitor ◽  
Hole Trapping ◽  
Nonvolatile Memories ◽  
High K ◽  
Voltage Stress ◽  
Retention Characteristics ◽  
Trapping Sites

AbstractMaterials and electrical properties of the MOS capacitor containing nc-RuO embedded in the high-k ZrHfO dielectric film have been studied. The electron- and hole-trapping capacities and trapping sites in this kind of device were investigated using the constant voltage stress method, the frequency-dependent C-V measurement, and the retention characteristics. The negligible charge trapping phenomenon in the non-embedded device rules out the possibility of any trapping site in the bulk ZrHfO film or at the Si/ZrHfO interface. The electrical characterization result suggests that electrons are trapped in the bulk nc-RuO. However, holes have two possible trapping sites, i.e., in the bulk nc-RuO or at the nc-RuO/ZrHfO interface.

Fractal metal cluster formation in polymers and nonlinear-optical mechanisms

1994 ◽  
Author(s):  
Todd M. Brown ◽  
Constantina Poga ◽  
Jenny Severson ◽  
Von Jackson ◽  
Mark G. Kuzyk ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Metal Cluster ◽  
Cluster Formation
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