Nb and Ta layer doping effects on the interfacial energetics and electronic properties of LaAlO3/SrTiO3 heterostructure: first-principles analysis

2016 ◽  
Vol 18 (4) ◽  
pp. 2379-2388 ◽  
Author(s):  
Safdar Nazir ◽  
Maziar Behtash ◽  
Jianli Cheng ◽  
Jian Luo ◽  
Kesong Yang
Keyword(s):  
Electron Transport ◽  
First Principles ◽  
Electron Gas ◽  
Interfacial Region ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Transport Property ◽  
Doping Effects ◽  
Dimensional Electron Gas

Nb(Ta) layer doping at the interfacial region of the LaAlO3/SrTiO3 heterostructure system provides a possible avenue to tune the electron transport property of the two-dimensional electron gas.

ELECTRON TRANSPORT IN A NANOSTRUCTURE PERIODICALLY MODULATED BY FERROMAGNETIC AND SCHOTTKY METAL STRIPES

2011 ◽  
Vol 25 (18) ◽  
pp. 1529-1536 ◽  
Author(s):  
JIAN-DUO LU ◽  
HONG-YU LIU ◽  
YUN-BAO LI ◽  
MEI-JUAN YUN ◽  
WEI ZHENG
Keyword(s):  
Electron Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

The spin-dependent electron transport is theoretically investigated in a two-dimensional electron gas, which is periodically modulated by ferromagnetic and Schottky metal (SM) stripes. We find that the spin-dependent transmission and conductance as well as polarization strongly depend on the number of periods. We also find that the transmission and the polarization of transmitted beams periodically change with increasing the width of the SM stripe.

SPIN-DEPENDENT ELECTRON TRANSPORT IN A QUANTUM WIRE WITH FINITE WIDTH MODULATED BY MAGNETIC-ELECTRIC BARRIERS

2012 ◽  
Vol 26 (26) ◽  
pp. 1250138
Author(s):  
JIAN-DUO LU ◽  
BIN XU ◽  
WEI ZHENG
Keyword(s):  
Electron Transport ◽  
Quantum Wire ◽  
Electron Gas ◽  
Transmission Probability ◽  
Finite Width ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Electric Barrier

We theoretically present the spin-dependent electron transport in a two-dimensional electron gas (2DEG) with finite width modulated by magnetic–electric barriers. It is found that the transmission probability and the spin polarization are strongly dependent on the height of the electric barrier, the energy of the incident electron, the distance between the two magnetic fields, and the width of the 2DEG. These may be useful for making the practical devices.

VOLTAGE-TUNABLE SPIN POLARIZATION OF TWO-DIMENSIONAL ELECTRON GAS IN FERROMAGNETIC/SEMICONDUCTOR HYBRID NANOSYSTEM

2006 ◽  
Vol 13 (05) ◽  
pp. 599-605
Author(s):  
MAOWANG LU
Keyword(s):  
Electron Transport ◽  
Applied Voltage ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Alternative Scheme ◽  
Spin Polarized ◽  
Dimensional Electron Gas ◽  
Hybrid Nanosystem

The spin-dependent electron transport in a two-dimensional electron gas (2DEG) modulated by a stripe of magnetized ferromagnetic metal under an applied voltage was investigated theoretically. It is revealed that highly spin-polarized current can be achieved in this kind of nanosystems. It is also shown that the spin polarity of the electron transport can be switched by adjusting the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to spin polarize electrons into semiconductors, and this device may be used as a voltage-tunable spin filter.

scholarly journals Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure

2020 ◽  
Vol 89 (2) ◽  
pp. 20101
Author(s):  
Muhammad Javaid Iqbal ◽  
Dirk Reuter ◽  
Andreas Dirk Wieck ◽  
Caspar van der Wal
Keyword(s):  
Electron Transport ◽  
Ohmic Contacts ◽  
Heating Temperature ◽  
Electron Gas ◽  
Point Of View ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Low Resistance ◽  
Dimensional Electron Gas

The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In order to explore electron transport in such systems, low-resistance ohmic contacts are required that connect the 2DEG to macroscopic measurement leads at the surface. Here we report on designing and measuring a dedicated device for unraveling the various resistance contributions in such contacts, which include pristine 2DEG series resistance, the 2DEG resistance under a contact, the contact resistance itself, and the influence of pressing a bonding wire onto a contact. We also report here a recipe for contacts with very low resistance values that remain below 10 Ω for annealing times between 20 and 350 s, hence providing the flexibility to use this method for materials with different 2DEG depths. The type of heating, temperature ramp rate and gas forming used for annealing is found to strongly influence the annealing process and hence the quality of the resulting contacts.

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