Band tail-induced photoluminescence broadening in heavily In-doped n-type ZnO nanowires

2015 ◽  
Vol 17 (27) ◽  
pp. 17552-17556 ◽  
Author(s):  
H. P. He ◽  
Z. Wang ◽  
H. F. Duan ◽  
Z. Z. Ye
Keyword(s):  
Low Temperature ◽  
Electron Concentration ◽  
Impurity Band ◽  
Zno Nanowires ◽  
Band Tail ◽  
Doped Zno

The formation of the impurity band in heavily In-doped ZnO nanowires results in a remarkable broadening of photoluminescence even at low temperature, which can be used to estimate the electron concentration.

Narrowing of band gap and low-temperature spin glass behavior of FeNi co-doped ZnO nanowires

2009 ◽  
Vol 87 (5) ◽  
pp. 57004 ◽  
Author(s):  
Javed Iqbal ◽  
Xiaofang Liu ◽  
Abdul Majid ◽  
Dapeng Yu ◽  
Ronghai Yu
Keyword(s):  
Low Temperature ◽  
Spin Glass ◽  
Band Gap ◽  
Zno Nanowires ◽  
Spin Glass Behavior ◽  
Doped Zno ◽  
Co Doped ◽  
Glass Behavior

scholarly journals Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application

2020 ◽  
Vol 10 (1) ◽  
pp. 21-28
Author(s):  
Yas Al-Hadeethi ◽  
Rashad I. Badran ◽  
Ahmad Umar ◽  
Saleh. H. Al-Heniti ◽  
Bahaaudin M. Raffah ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Morphological Characteristics ◽  
Zno Nanowires ◽  
Heterojunction Diode ◽  
Si Substrate ◽  
Voltage Range ◽  
Doped Zno ◽  
Electrical Characterizations ◽  
Excellent Stability

In this paper, the heterojunction diode based on n-Ga doped ZnO nanowires interconnected with disks/p-Si assembly was fabricated and their low-temperature electrical properties were examined. The Ga-doped ZnO nanowires interconnected with disks were grown over p-Si substrate and studied by numerous techniques to understand the structural, compositional and morphological characteristics. Electrical properties, at lowtemperatures ranging from 77 K–295 K, were examined for the fabricated heterojunction diode assembly both in reverse and forward biased conditions which exhibited an excellent stability over all the temperature range. The detailed electrical characterizations revealed that the current decreases gradually from 1.9 μA, to 0.87 μA to 0.84 μA when temperature increases from 77 K, 100 K to 150 K and then increases gradually from 1.86 μA–3.36 μA and to 9.95 μA when temperature increases from 200 K–250 K and to 295 K, respectively. Both the highest rectifying ratio at 100 K and the lowest one at 295 K occur in the voltage range of 2–5 V.

Dilute manganese-doped ZnO nanowires for high photoelectrical performance

RSC Advances ◽  
2016 ◽  
Vol 6 (94) ◽  
pp. 91216-91224 ◽  
Author(s):  
Wei-Hao Chen ◽  
Chih-Chuan Su ◽  
Hui-Huang Hsieh ◽  
Meng-Fan Chang ◽  
Mon-Shu Ho
Keyword(s):  
Low Temperature ◽  
Hydrothermal Method ◽  
Zno Nanowires ◽  
Doped Zno

This study developed dilute manganese-doped ZnO (D-(Zn,Mn)O) nanowires using a low temperature hydrothermal method.

Efficient multispectral photodetection using Mn doped ZnO nanowires

2012 ◽  
Vol 22 (19) ◽  
pp. 9678 ◽  
Author(s):  
Rajiv Ramanujam Prabhakar ◽  
Nripan Mathews ◽  
K B Jinesh ◽  
K R G Karthik ◽  
Stevin Snellius Pramana ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Doped Zno ◽  
Mn Doped
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