Robust magnetic domains in fluorinated ReS2 monolayer

2015 ◽  
Vol 17 (28) ◽  
pp. 18843-18853 ◽  
Author(s):  
G. C. Loh ◽  
Ravindra Pandey
Keyword(s):  
Spin Wave ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Domains ◽  
Spintronic Devices ◽  
Logic Devices ◽  
Gap States

The robust metallic mid-gap states in localized domains of fluorinated ReS2 monolayer could be useful in spintronic devices, such as spin-transfer torque and spin-wave logic devices.

scholarly journals Nonresonant amplification of spin waves through interface magnetoelectric effect and spin-transfer torque

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Piotr Graczyk ◽  
Maciej Krawczyk
Keyword(s):  
Spin Wave ◽  
Magnetoelectric Effect ◽  
Spin Waves ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetization Dynamics ◽  
Dielectric Thin Film ◽  
Spintronic Devices ◽  
Thin Film Capacitors ◽  
Dynamic Charge

AbstractWe present a new mechanism for manipulation of the spin-wave amplitude through the use of the dynamic charge-mediated magnetoelectric effect in ultrathin multilayers composed of dielectric thin-film capacitors separated by a ferromagnetic bilayer. Propagating spin waves can be amplified and attenuated with rising and decreasing slopes of the oscillating voltage, respectively, locally applied to the sample. The way the spin accumulation is generated makes the interaction of the spin-transfer torque with the magnetization dynamics mode-selective and restricted to some range of spin-wave frequencies, which is contrary to known types of the spin-transfer torque effects. The interfacial nature of spin-dependent screening allows to reduce the thickness of the fixed magnetization layer to a few nanometers, thus the proposed effect significantly contributes toward realization of the magnonic devices and also miniaturization of the spintronic devices.

Materials, Devices and Spin Transfer Torque in Antiferromagnetic Spintronics: A Concise Review

SPIN ◽  
2017 ◽  
Vol 07 (03) ◽  
pp. 1740014 ◽  
Author(s):  
Cormac Ó Coileáin ◽  
Han Chun Wu
Keyword(s):  
Magnetic Fields ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Tetragonal Structure ◽  
Next Generation ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Concise Review ◽  
Plane Anisotropy ◽  
Magnetic States

From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

Spin-Wave Dynamics in Antiferromagnets under Electric Current

2021 ◽  
Vol 1 ◽  
Keyword(s):  
Electric Current ◽  
Spin Wave ◽  
Doppler Effect ◽  
Spin Waves ◽  
Microscopic Analysis ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Wave Dynamics

Electric current causes a Doppler effect in spin waves in ferromagnets through a spin-transfer torque. We report that antiferromagnets allow two such spin-transfer torques and present a microscopic analysis that interpolates ferro- and antiferromagnetic transport regimes.

Enhancing Frequency and Reducing the Power of Spin-Torque Nanooscillator By The Generated Oersted Field

SPIN ◽  
2020 ◽  
Vol 10 (02) ◽  
pp. 2050012
Author(s):  
H. Bhoomeeswaran ◽  
P. Sabareesan
Keyword(s):  
Spin Valve ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Spintronic Devices ◽  
Frequency Tunability ◽  
Spin Polarized ◽  
The Individual ◽  
Promising Source ◽  
Nonmagnetic Spacer

The current-driven magnetization precession dynamics stimulated by Spin-Transfer Torque (STT) in a trilayer spin-valve device (typically Spin-Torque Nanooscillator (STNO)) is numerically investigated by solving the Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation. We have devised four STNO devices made of ferromagnetic alloys such as CoPt, CoFeB, Fe[Formula: see text]B[Formula: see text]Ni2 and EuO, which act as free and fixed layers. Here, copper acts as a nonmagnetic spacer for all the devices. In this work, we have introduced the current-induced Oersted field, which is generated when a spin-polarized current passes through the device. The generated Oersted field strength is varied by increasing the diameter of the STNO device. Frequency tunability is achieved in all the four devices, whereas the power of the individual device reduces. The frequency and power of the devices depend entirely on the saturation magnetization of the material, which inherently reflects in the current density and the coherence of the spin-polarized DC. In all devices, the frequency increases, whereas the power decreases by increasing the strength of the Oersted field. Among the four devices, the maximum frequency can be tuned up to 104[Formula: see text]GHz with 40[Formula: see text]nm device diameter, which is obtained for EuO material. This opens a promising source and paves a glittering future for the nanoscale spintronic devices.

scholarly journals Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1345
Author(s):  
Shaik Wasef ◽  
Hossein Fariborzi
Keyword(s):  
Critical Current ◽  
Theoretical Study ◽  
Tunnel Junctions ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Orbit ◽  
Micromagnetic Simulations ◽  
Spintronic Devices ◽  
Current Densities ◽  
The Relationship

Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. In this paper, we derived the relationship between the STT and SOT critical current densities under combined injection. We included the damping–like torque (DLT) and field-like torque (FLT) components of both the STT and SOT. The results were derived when the ratio of the FLT to the DLT component of the SOT was positive. We observed that the relationship between the critical SOT and STT current densities depended on the damping constant and the magnitude of the FLT component of the STT and the SOT current. We also noted that, unlike the FLT component of SOT, the magnitude and sign of the FLT component of STT did not have a significant effect on the STT and SOT current densities required for switching. The derived results agreed well with micromagnetic simulations. The results of this work can serve as a guideline to model and develop spintronic devices using a combined injection of STT and SOT currents.

scholarly journals Realization of a Spin-Wave Switch Based on the Spin-Transfer-Torque Effect

2018 ◽  
Vol 9 ◽  
pp. 1-5 ◽  
Author(s):  
Thomas Meyer ◽  
Philipp Pirro ◽  
Thomas Bracher ◽  
Frank Heussner ◽  
Alexander A. Serga ◽  
...  
Keyword(s):  
Spin Wave ◽  
Spin Transfer Torque ◽  
Spin Transfer

Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross

2014 ◽  
Vol 115 (17) ◽  
pp. 17D123 ◽  
Author(s):  
Tanmoy Pramanik ◽  
Urmimala Roy ◽  
Maxim Tsoi ◽  
Leonard F. Register ◽  
Sanjay K. Banerjee
Keyword(s):  
Spin Wave ◽  
Normal Modes ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetization Dynamics ◽  
Micromagnetic Simulations ◽  
Wave Normal

Spin-transfer torque in nonuniform magnetic structures

2017 ◽  
Author(s):  
T. Ono
Keyword(s):  
Magnetic Moments ◽  
Magnetic Domain ◽  
Dipole Interaction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Vortex ◽  
Magnetic Domains ◽  
Spin Configuration ◽  
Magnetic Structures ◽  
Ferromagnetic Disk

This chapter defines a magnetic domain wall (DW) as the transition region where the direction of magnetic moments gradually change between two neighbouring domains. It has been pointed out that ferromagnetic materials are not necessarily magnetized to saturation in the absence of an external magnetic field. Instead, they have magnetic domains, within each of which magnetic moments align. The formation of the magnetic domains is energetically favourable because this structure can lower the magnetostatic energy originating from the dipole–dipole interaction. A magnetic vortex realized in a ferromagnetic disk is a typical example of nonuniform magnetic structure. In very small ferromagnetic systems, where a curling spin configuration has been proposed to occur in place of domains, the formation of DWs is not energetically favored.

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