Controlled growth of large area multilayer graphene on copper by chemical vapour deposition

2015 ◽  
Vol 17 (35) ◽  
pp. 23081-23087 ◽  
Author(s):  
Sibel Kasap ◽  
Hadi Khaksaran ◽  
Süleyman Çelik ◽  
Hasan Özkaya ◽  
Cenk Yanık ◽  
...  

The mean free path in gasversusthe distance between nucleation sites is a key to the full coverage multilayer graphene growth.

2014 ◽  
Vol 2 (32) ◽  
pp. 13123-13128 ◽  
Author(s):  
Lili Fan ◽  
Kunlin Wang ◽  
Jinquan Wei ◽  
Minlin Zhong ◽  
Dehai Wu ◽  
...  

The location of nanoparticles is a straightforward reflection of the nucleation sites of graphene growth. The deposition of nanoparticles is consistent with the distribution of multilayer graphene.


2019 ◽  
Vol 16 (11/12) ◽  
pp. 692
Author(s):  
May Ali ◽  
Bamidele Victor Ayodele ◽  
Faizah Md Yasin ◽  
Mohd Nizar Hamidon ◽  
Suraya Abdul Rashid

2016 ◽  
Vol 148 ◽  
pp. 1295-1302
Author(s):  
May Ali ◽  
Suraya Abdul-Rashid ◽  
Mohd Nizar Hamidon ◽  
Faizah Md Yasin

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7590
Author(s):  
Luca Seravalli ◽  
Matteo Bosi

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.


CrystEngComm ◽  
2018 ◽  
Vol 20 (30) ◽  
pp. 4249-4257 ◽  
Author(s):  
Paulraj Gnanasekar ◽  
Dharmaraj Periyanagounder ◽  
Anbarasan Nallathambi ◽  
Sadhasivam Subramani ◽  
Manivel Palanisamy ◽  
...  

Piranha treatment provides an ideal platform for the controlled growth of large-scale monolayer MoS2 on dielectric and semiconductor substrates for device applications.


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