scholarly journals The electronic properties of mixed valence hydrated europium chloride thin film

2015 ◽  
Vol 17 (28) ◽  
pp. 18403-18412 ◽  
Author(s):  
M. G. Silly ◽  
F. Charra ◽  
F. Lux ◽  
G. Lemercier ◽  
F. Sirotti
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Electronic Properties ◽  
Mixed Valence ◽  
Photoemission Spectroscopy ◽  
Resonant Photoemission ◽  
Europium Chloride ◽  
The Eu

We investigate the electronic properties of a model mixed-valence hydrated chloride europium salt by means of high resolution photoemission spectroscopy (HRPES) and resonant photoemission spectroscopy (RESPES) at the Eu 3d → 4f and 4d → 4f transitions.

High Resolution Photoelectron Study of the Optimum Oxygen Doping Levels in High Tc Superconductors

1993 ◽  
Vol 307 ◽  
Author(s):  
R. J. Kelley ◽  
X. C. Cai ◽  
Jian Ma ◽  
D. C. Larbalestier ◽  
M. Onellion
Keyword(s):  
High Resolution ◽  
Electronic Properties ◽  
Cuprate Superconductors ◽  
Underlying Mechanism ◽  
Oxygen Stoichiometry ◽  
Photoemission Spectroscopy ◽  
Standard Material ◽  
Resonant Photoemission ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Photoelectron Study

ABSTRACTThe materials and electronic properties of the new cuprate superconductors are critically dependent upon both the oxygen stoichiometry and annealing history of the material. Improving Jc, Tc, and determining the underlying mechanism of superconductivity depend on a better understanding of these effects. In the study of Bi2Sr2CaCu2O8-δ we have combined standard material characterization techniques with high resolution angle resolved photoemission spectroscopy and resonant photoemission spectroscopy to illuminate these issues. Specifically, we make high quality single crystals of BSCCO and then anneal in different atmospheres and pressures. We correlate this with c-axis resistivity, a, b-plane resistivity, and resonant photoemission spectroscopy. In this way we can explain the macroscopic transport properties in terms of the electronic properties of the material determined from photoemission. We find that we can change the c-axis resistivity from non-metallic to metallic by adding oxygen and that this correlates with increased oscillator strength in the c-axis direction at the Fermi level.

High-resolution angle-resolved resonant-photoemission spectroscopy of FexTiTe2

2004 ◽  
Vol 351 (3-4) ◽  
pp. 262-264 ◽  
Author(s):  
K. Yamazaki ◽  
K. Shimada ◽  
H. Negishi ◽  
F. Xu ◽  
A. Ino ◽  
...  
Keyword(s):  
High Resolution ◽  
Photoemission Spectroscopy ◽  
Resonant Photoemission

Synchrotron Photoemission Studies of Surfaces and Overlayers

1988 ◽  
Vol 143 ◽  
Author(s):  
T.-C. Chiang
Keyword(s):  
High Resolution ◽  
Binding Energy ◽  
Electronic Properties ◽  
Atomic Structure ◽  
Chemical Shifts ◽  
Quantitative Description ◽  
Photoemission Spectroscopy ◽  
Electronegativity Difference ◽  
Model Structures ◽  
Reference Samples

AbstractHigh-resolution core-level photoemission spectroscopy allows the distinction of atoms in different layers and in inequivalent sites by their binding energy shifts. By comparison with model structures and reference samples, the number of atoms in each distinct chemical configuration can be determined. The chemical shifts induced by adsorption can be correlated with the electronegativity difference between the substrate and the adsorbate atoms. These observations provide a quantitative description of the interaction and reaction between adsorbates and surfaces, and important information about the atomic structure and the electronic properties can be deduced. Results from several representative systems including the adsorption of In, Ag, and Sn on Si(100) will be discussed.

HIGH-RESOLUTION, LOW-TEMPERATURE PHOTOEMISSION SPECTROSCOPY AT THE HISOR LINEAR UNDULATOR BEAMLINE

2002 ◽  
Vol 09 (01) ◽  
pp. 529-534 ◽  
Author(s):  
KENYA SHIMADA ◽  
MASASHI ARITA ◽  
YUKIHARU TAKEDA ◽  
HIROYUKI FUJINO ◽  
KENICHI KOBAYASHI ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Gas Phase ◽  
Photon Energy ◽  
Energy Resolution ◽  
Electronic States ◽  
Photon Flux ◽  
Photoemission Spectroscopy ◽  
Resonant Photoemission ◽  
Photoemission Study

In order to study the electronic states of solids, using high-resolution, low-temperature photoemission spectroscopy (PES) with tunable photon energies, we have constructed a high-resolution undulator beamline operating in the photon-energy range 26–300 eV at the compact 700 MeV electron-storage ring HiSOR located at Hiroshima University. By way of gas-phase experiments, with photon flux larger than 2 × 1010 photons/s, photon-energy resolving powers of E/ΔE > 16000 and 3800 were obtained at hν ~ 48 eV and ~ 244 eV, respectively. High-resolution PES experiments on evaporated Au at 8 K were performed at the beamline with a total energy resolution of ΔE = 12 meV at hν = 48 eV. Among the first experiments from the beamline, a resonant photoemission study of UNiSn is presented. The U 5f derived peak is significantly enhanced at hν = 98 eV.

Ce4f STATES IN CePd2Si2 AND CeNi2Si2 INVESTIGATED BY RESONANT PHOTOEMISSION SPECTROSCOPY

2002 ◽  
Vol 09 (02) ◽  
pp. 1035-1039 ◽  
Author(s):  
K. MIMURA ◽  
Y. OKABAYASHI ◽  
H. MIZOHATA ◽  
D. SAKIYAMA ◽  
O. SAKAI ◽  
...  
Keyword(s):  
High Resolution ◽  
Relative Intensity ◽  
Electronic States ◽  
Kondo Temperature ◽  
Photoemission Spectroscopy ◽  
Present Calculation ◽  
Intermediate Valence ◽  
Final State ◽  
Resonant Photoemission ◽  
Kondo Resonance

Ce 4f electronic states in an antiferromagnetic Kondo compound CePd 2 Si 2 and a strong intermediate-valence compound CeNi 2 Si 2 have been investigated by means of high-resolution Ce 4d–4f resonant photoemission spectroscopy at 12 K. The relative intensity of the f5/21 to f7/21 final state in the Ce 4f spectrum for CeNi 2 Si 2 is stronger than the relative intensity for CePd 2 Si 2, indicating that the intensity of Kondo resonance scales the Kondo temperature since the Ce 4f spectrum near the Fermi level dominantly reflects the bulk component. Both Ce 4f spectra have been well fitted by the spectral calculations based on a single impurity Anderson model with consideration of the bulk and surface components. Our present calculation indicates that the model is applicable to the analyses of the Ce 4f spectra of the weakly and strongly hybridized systems.

The measurement of thin-film reaction layers with high-resolution FESEM

1995 ◽  
Vol 53 ◽  
pp. 330-331
Author(s):  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Reaction Layer ◽  
Product Layer ◽  
Buffer Layers ◽  
Oxide Superconductors ◽  
Rate Limiting Step ◽  
Ceramic Thin Film ◽  
Backscattered Electron ◽  
Boundary Reaction

Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.

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