A study by electrical conductivity measurements of the semiconductive and redox properties of Nb-doped NiO catalysts in correlation with the oxidative dehydrogenation of ethane

2015 ◽  
Vol 17 (12) ◽  
pp. 8138-8147 ◽  
Author(s):  
Ionel Popescu ◽  
Zinovia Skoufa ◽  
Eleni Heracleous ◽  
Angeliki Lemonidou ◽  
Ioan-Cezar Marcu
Keyword(s):  
Electrical Conductivity ◽  
Oxidative Dehydrogenation ◽  
Redox Properties ◽  
Conductivity Measurements ◽  
Oxidative Dehydrogenation Of Ethane ◽  
P Type

All the catalysts were partially reduced during catalysis and the ODH selectivity was inversely correlated with their p-type semiconductivity under the reaction mixture.

Temperature Dependence of 1/f Noise and Electrical Conductivity Measurements on p-type a-Si:H Devices

2013 ◽  
Vol 1536 ◽  
pp. 181-186 ◽  
Author(s):  
V. C. Lopes ◽  
E. Hanson ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C. L. Littler ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Valence Band ◽  
Hole Mobility ◽  
Type A ◽  
Localized States ◽  
Conductivity Measurements ◽  
Band Tail ◽  
Resistance Change ◽  
P Type

ABSTRACTNoise and electrical conductivity measurements were made at temperatures ranging from approximately 270°K to 320°K on devices fabricated on as grown Boron doped p-type a-Si:H films. The room temperature 1/f noise was found to be proportional to the bias voltage and inversely proportional to the square root of the device area. As a result, the 1/f noise can be described by Hooge’s empirical expression [1]. The 1/f noise was found to be independent of temperature in the range investigated even though the device conductivity changed by a factor of approximately 4 over this range. Conductivity temperature measurements exhibit a T-0.25 dependence, indicative of conduction via localized states in the valence band tail [2,3]. In addition, multiple authors have analyzed hole mobility in a-Si:H and find that the hole mobility depends on the scattering of mobile holes by localized states in the valence band tail [4-7]. We conclude that the a-Si:H carrier concentration does not change appreciably with temperature, and thus, the resistance change in this temperature range is due to the temperature dependence of the hole mobility. Our results are applicable to a basic understanding of noise and conductivity requirements for a-Si:H materials used for microbolometer ambient temperature infrared detection.

Electrical Conductivity and Nonstoichiometry in Pr0.545Ce0.455O2-x

1996 ◽  
Vol 453 ◽  
Author(s):  
O. Porat ◽  
H. L. Tuller ◽  
M. Shelef ◽  
E. M. Logothetis
Keyword(s):  
Electrical Conductivity ◽  
Phase Separation ◽  
Solid State ◽  
Small Polaron ◽  
Coulometric Titration ◽  
Oxygen Nonstoichiometry ◽  
Conductivity Measurements ◽  
Two Phase ◽  
Polaron Hopping ◽  
P Type

AbstractThe oxygen nonstoichiometry of Pr0.545Ce0.455O2-x was studied by solid state coulometric titration and was found to be extensive (0 ≤ y ≤ 0.28) at temperatures of 400–600 °C. The Po2 - x curves showed evidence of the existence of a number of single and two phase regions. Electrical conductivity measurements, performed under similar conditions, exhibited a p-n transition for temperature of 500 °C and below. The activated p-type conductivity was modeled in terms of the small polaron hopping mechanism. The p-n transition was correlated with the onset of phase separation.

Study of the Redox Properties of Noble Metal/Co3O4 by Electrical Conductivity Measurements

2008 ◽  
Vol 124 (3-4) ◽  
pp. 318-323 ◽  
Author(s):  
Hongmin Duan ◽  
Dongyan Xu ◽  
Wenzhao Li ◽  
Hengyong Xu
Keyword(s):  
Electrical Conductivity ◽  
Noble Metal ◽  
Redox Properties ◽  
Conductivity Measurements

Total Body Electrical Conductivity Measurements in the Neonate

1991 ◽  
Vol 18 (3) ◽  
pp. 611-627 ◽  
Author(s):  
Marta L. Fiorotto ◽  
William J. Klish
Keyword(s):  
Electrical Conductivity ◽  
Conductivity Measurements ◽  
Total Body

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Electrical conductivity studies on silica phases and the effects of phase transformation

2019 ◽  
Vol 104 (12) ◽  
pp. 1800-1805
Author(s):  
George M. Amulele ◽  
Anthony W. Lanati ◽  
Simon M. Clark
Keyword(s):  
Electrical Conductivity ◽  
Activation Volume ◽  
Activation Enthalpy ◽  
Hydrogen Charge ◽  
Charge Compensation ◽  
Composition Analysis ◽  
Conductivity Measurements ◽  
Pressure System ◽  
Electrical Conductivities ◽  
Silica Phases

Abstract Starting with the same sample, the electrical conductivities of quartz and coesite have been measured at pressures of 1, 6, and 8.7 GPa, respectively, over a temperature range of 373–1273 K in a multi-anvil high-pressure system. Results indicate that the electrical conductivity in quartz increases with pressure as well as when the phase change from quartz to coesite occurs, while the activation enthalpy decreases with increasing pressure. Activation enthalpies of 0.89, 0.56, and 0.46 eV, were determined at 1, 6, and 8.7 GPa, respectively, giving an activation volume of –0.052 ± 0.006 cm3/mol. FTIR and composition analysis indicate that the electrical conductivities in silica polymorphs is controlled by substitution of silicon by aluminum with hydrogen charge compensation. Comparing with electrical conductivity measurements in stishovite, reported by Yoshino et al. (2014), our results fall within the aluminum and water content extremes measured in stishovite at 12 GPa. The resulting electrical conductivity model is mapped over the magnetotelluric profile obtained through the tectonically stable Northern Australian Craton. Given their relative abundances, these results imply potentially high electrical conductivities in the crust and mantle from contributions of silica polymorphs. The main results of this paper are as follows:The electrical conductivity of silica polymorphs is determined by impedance spectroscopy up to 8.7 GPa.The activation enthalpy decreases with increasing pressure indicating a negative activation volume across the silica polymorphs.The electrical conductivity results are consistent with measurements observed in stishovite at 12 GPa.

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