scholarly journals Zinc oxide as a defect-dominated material in thin films for photovoltaic applications – experimental determination of defect levels, quantification of composition, and construction of band diagram

2015 ◽  
Vol 17 (15) ◽  
pp. 10004-10013 ◽  
Author(s):  
Maciej Krzywiecki ◽  
Lucyna Grządziel ◽  
Adnan Sarfraz ◽  
Danish Iqbal ◽  
Anna Szwajca ◽  
...  

In the present work we determine the electronic structure and quantify composition of sol–gel synthesized oxygen-deficient ZnO thin layers.

2013 ◽  
Vol 42 (28) ◽  
pp. 10358 ◽  
Author(s):  
Hanqing Zhao ◽  
Jiaou Wang ◽  
Linxing Zhang ◽  
Yangchun Rong ◽  
Jun Chen ◽  
...  

2019 ◽  
Vol 775 ◽  
pp. 466-473 ◽  
Author(s):  
A.R. Nimbalkar ◽  
N.B. Patil ◽  
V.V. Ganbavle ◽  
S.V. Mohite ◽  
K.V. Madhale ◽  
...  

1984 ◽  
Vol 32 ◽  
Author(s):  
Carlo G. Pantano ◽  
C. A. Houser ◽  
R. K. Brow

ABSTRACTThe application of surface analysis techniques to the characterization of sol/gel surfaces and thin films is described. Secondary-ion mass spectroscopy (SIMS), x-ray photoelectron spectroscopy (XPS) and sputter-induced photon spectroscopy (SIPS) are used to measure the composition of multicomponent silicate films, the relative water content of alumina films, the nitrogen content of ammonia treated silica films, and the depth profiles for films on black chrome. The determination of chemical structure using XPS and SIMS is also discussed. Finally, a brief introduction to temperature-programmed desorption (TPD) and its potential for studying surface chemical reactions, in situ, is presented.


2021 ◽  
Vol 24 (3) ◽  
pp. 38-42
Author(s):  
Marwa Mudfer Alqaisi ◽  
◽  
Alla J. Ghazai ◽  

In this work, pure Zinc oxide and tin doped Zinc oxide thin films nanoparticles with various volume concentrations of 2, 4, 6, and 8V/V% were prepared by using the sol-gel method. The optical properties were investigated by using UV-Visible spectroscope, and the value exhibits the direct allowed transition. The average of transmittance was around ~(17-23) %in visible region. The optical energy band gap was calculated with wavelength (300-900) nm for pure ZnO and Sn doped ZnO thin films which decreases with increasing concentration from 3.4 eV to 3.1 eV respectively and red shift. The real dielectric(εr) and the imaginary dielectric εiare the same behavior of the refractive index(n) the extinction coefficient (k) respectively. The optical limiting properties were studied by using an SDL laser with a wavelength of 235 nm. ZnO and doping thin films an found efficient as optic limiting and depend on the concentration of the all samples.


2012 ◽  
Vol 121 (1) ◽  
pp. 217-220 ◽  
Author(s):  
M.S. Kim ◽  
K.G. Yim ◽  
S. Kim ◽  
G. Nam ◽  
D.Y. Lee ◽  
...  

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