Novel high-temperature ferroelectric single crystals 0.38Bi(Mg1/2Ti1/2)O3–0.62PbTiO3 with good and temperature-stable piezoelectric properties

CrystEngComm ◽  
2015 ◽  
Vol 17 (30) ◽  
pp. 5605-5608 ◽  
Author(s):  
Jinfeng Liu ◽  
Xiaxia Chen ◽  
Guisheng Xu ◽  
Danfeng Yang ◽  
Yanfeng Tian ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Piezoelectric Properties ◽  
Flux Method

Novel 0.38BMT–0.62PbT single crystals with high Tc, as well as good and temperature-stable piezoelectric properties have been grown by a flux method.

High temperature piezoelectric properties of yttrium calcium oxyborate single crystals

2010 ◽  
Vol 4 (5-6) ◽  
pp. 103-105 ◽  
Author(s):  
Fapeng Yu ◽  
Shujun Zhang ◽  
Xian Zhao ◽  
Duorong Yuan ◽  
Qingming Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Piezoelectric Properties

ENHANCED PIEZOELECTRIC PROPERTIES IN (Bi0.5K0.5)TiO3–(Bi0.5Na0.5)TiO3 FERROELECTRIC SINGLE CRYSTALS

2011 ◽  
Vol 01 (01) ◽  
pp. 63-69 ◽  
Author(s):  
AKIFUMI MORISHITA ◽  
YUUKI KITANAKA ◽  
MAKOTO IZUMI ◽  
YUJI NOGUCHI ◽  
MASARU MIYAYAMA
Keyword(s):  
Phase Diagram ◽  
Single Crystals ◽  
Diffraction Data ◽  
Piezoelectric Properties ◽  
Rietveld Analysis ◽  
X Ray Diffraction ◽  
Flux Method ◽  
X Ray ◽  
Piezoelectric Strain ◽  
Piezoelectric Strain Constant

Single crystals of x( Bi,K ) TiO 3 - (1 - x)( Bi,Na ) TiO 3 (0.11 ≤ x ≤ 0.47) were grown by a flux method and their polarization and piezoelectric properties were investigated along 〈100〉 cubic at 25°C. Rietveld analysis of powder X-ray diffraction data provides a tentative phase diagram in this system: rhombohedral R3c for x ≤ 0.22, pseudocubic for 0.22 < x < 0.3 and tetragonal P4mm for 0.3 ≤ x. Piezoelectric strain properties show that the crystals (x = 0.38) exhibited an extremely large piezoelectric strain constant of 637 pm/V.

High-Temperature Growth of GaN Single Crystals Using Li-Added Na-Flux Method

2012 ◽  
Vol 51 (12R) ◽  
pp. 121002 ◽  
Author(s):  
Masatomo Honjo ◽  
Hiroki Imabayashi ◽  
Hideo Takazawa ◽  
Yuma Todoroki ◽  
Daisuke Matsuo ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Flux Method ◽  
Temperature Growth

scholarly journals Resistivity and piezoelectric properties of Ca3TaGa1.5Al1.5Si2O14 single crystals for high temperature sensors

RSC Advances ◽  
2017 ◽  
Vol 7 (89) ◽  
pp. 56697-56703 ◽  
Author(s):  
Xiuwei Fu ◽  
Encarnación G. Víllora ◽  
Yoshitaka Matsushita ◽  
Yuuki Kitanaka ◽  
Yuji Noguchi ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Temperature Sensor ◽  
Piezoelectric Properties ◽  
Temperature Sensors ◽  
High Quality ◽  
Sensor Applications ◽  
High Temperature Sensor

A high quality CTGAS single crystal with excellent properties for high temperature sensor applications.

Synthesis and Thermoelectric Properties of NaxCo2O4 Single Crystals

2005 ◽  
Vol 886 ◽  
Author(s):  
Jian He ◽  
Kelvin Aaron ◽  
Edward Abbott ◽  
Joseph Kolis ◽  
Terry M. Tritt
Keyword(s):  
Thermal Conductivity ◽  
High Temperature ◽  
Low Temperature ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Free Path ◽  
Mean Free Path ◽  
Flux Method ◽  
Different Types

ABSTRACTSingle crystal NaCo2O4 platelets with sizes up to 6mm were synthesized by the typical high temperature NaCl flux method. The in-plane thermopower α and in-plane resistivity ρ were measured to be ∼100µV/K and 0.3mΩ-cm at 300K, respectively. The in-plane thermal conductivity κ was measured by our custom-designed “PTC” system and found to be ∼5 W-m−1K−1 at 300K, which is 2-3 times larger than the polycrystalline NaCo2O4. The in-plane phonon mean free path lph was estimated to be ∼9.5Å, which is much smaller than the in-plane mean free path of conducting carriers (la∼51Å). A novel low temperature flux method where NaCl/NaOH was used as flux and metallic Co powders as Co source was developed to successfully synthesize Na-deficient NaxCo2O4 crystals with size up to 6mm at low temperature of 550°C. The different temperature dependence in resistivity reveals that two different types of crystals can exist, one is metallic and another is semiconducting. The temperature dependence of the measured k is like that of a disordered solid and the value is found to be ∼7 W-m−1K−1 at 300K.

High-Temperature Growth of GaN Single Crystals Using Li-Added Na-Flux Method

2012 ◽  
Vol 51 ◽  
pp. 121002
Author(s):  
Masatomo Honjo ◽  
Hiroki Imabayashi ◽  
Hideo Takazawa ◽  
Yuma Todoroki ◽  
Daisuke Matsuo ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Flux Method ◽  
Temperature Growth

Precipitation of NiHfsi phase in NiAl single crystals containing Hf

1995 ◽  
Vol 53 ◽  
pp. 532-533
Author(s):  
A. Garg ◽  
R. D. Noebe ◽  
R. Darolia
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
High Temperature Strength ◽  
Bridgman Technique ◽  
Shell Mold ◽  
Third Phase ◽  
Unknown Phase ◽  
Transmission Electron ◽  
Two Phases ◽  
Nial Matrix

Small additions of Hf to NiAl produce a significant increase in the high-temperature strength of single crystals. Hf has a very limited solubility in NiAl and in the presence of Si, results in a high density of G-phase (Ni16Hf6Si7) cuboidal precipitates and some G-platelets in a NiAl matrix. These precipitates have a F.C.C structure and nucleate on {100}NiAl planes with almost perfect coherency and a cube-on-cube orientation-relationship (O.R.). However, G-phase is metastable and after prolonged aging at high temperature dissolves at the expense of a more stable Heusler (β'-Ni2AlHf) phase. In addition to these two phases, a third phase was shown to be present in a NiAl-0.3at. % Hf alloy, but was not previously identified (Fig. 4 of ref. 2 ). In this work, we report the morphology, crystal-structure, O.R., and stability of this unknown phase, which were determined using conventional and analytical transmission electron microscopy (TEM).Single crystals of NiAl containing 0.5at. % Hf were grown by a Bridgman technique. Chemical analysis indicated that these crystals also contained Si, which was not an intentional alloying addition but was picked up from the shell mold during directional solidification.

Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method

2019 ◽  
Vol 58 (5) ◽  
pp. 050918 ◽  
Author(s):  
Takeaki Hamachi ◽  
Tetsuya Tohei ◽  
Masayuki Imanishi ◽  
Yusuke Mori ◽  
Akira Sakai
Keyword(s):  
Single Crystals ◽  
Threading Dislocations ◽  
Flux Method ◽  
Current Leakage ◽  
Local Current ◽  
Bulk Single Crystals
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