Manipulation of carrier concentration, crystallite size and density in polycrystalline anatase TiO2via amorphous-phase medium range atomic order

CrystEngComm ◽  
2015 ◽  
Vol 17 (10) ◽  
pp. 2101-2109 ◽  
Author(s):  
D. Eitan Barlaz ◽  
Edmund G. Seebauer
Keyword(s):  
Thin Film ◽  
Crystallite Size ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Growth Conditions ◽  
Atomic Order ◽  
Amorphous Films ◽  
Medium Range ◽  
Range Atomic Order ◽  
Phase Medium

Deposition temperature and other growth conditions affect carrier concentration and other properties of thin-film polycrystalline anatase, yielding evidence for medium range atomic order in the initially amorphous films.

Short- to Medium-Range Atomic Order and Crystallite Size of the Initial FeS Precipitate from Pair Distribution Function Analysis

2005 ◽  
Vol 17 (25) ◽  
pp. 6246-6255 ◽  
Author(s):  
F. M. Michel ◽  
S. M. Antao ◽  
P. J. Chupas ◽  
P. L. Lee ◽  
J. B. Parise ◽  
...  
Keyword(s):  
Distribution Function ◽  
Crystallite Size ◽  
Pair Distribution Function ◽  
Function Analysis ◽  
Atomic Order ◽  
Medium Range ◽  
Range Atomic Order

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

MOCVD of Bi2Te3 and Sb2Te3 on GaAs Substrates for Thin-Film Thermoelectric Applications

2006 ◽  
Vol 6 (11) ◽  
pp. 3325-3328 ◽  
Author(s):  
Jeong-Hun Kim ◽  
Yong-Chul Jung ◽  
Sang-Hee Suh ◽  
Jin-Sang Kim
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Thermoelectric Device ◽  
Organic Chemical ◽  
Gaas Substrates ◽  
Metal Organic ◽  
Surface Morphologies

Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of −160 μVK−1 for Bi2Te3 and + 110 μVK−1 for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

Optimum Growth Conditions of Ge–Sb–Te Alloy Thin Film Investigated by Ellipsometry

2004 ◽  
Vol 43 (3) ◽  
pp. 1006-1012 ◽  
Author(s):  
Sung Hyuck An ◽  
Xuezhe Li ◽  
Sang Youl Kim
Keyword(s):  
Thin Film ◽  
Growth Conditions ◽  
Alloy Thin Film ◽  
Optimum Growth

Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors

2008 ◽  
Vol 52 (3) ◽  
pp. 432-435 ◽  
Author(s):  
Maher Oudwan ◽  
Alexey Abramov ◽  
Pere Roca i Cabarrocas ◽  
François Templier
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Deposition Temperature ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film

SrTiO3 Functional Ceramics Thin Film Prepared by Self-Assembled Monolayers with the Liquid Phase Deposition Method on Silicon Substrates

2010 ◽  
Vol 105-106 ◽  
pp. 270-273
Author(s):  
Hui Jun Ren ◽  
Guo Qiang Tan ◽  
Hong Yan Miao ◽  
Ya Yu Song ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Liquid Phase ◽  
Deposition Temperature ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Silicon Substrates ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Surface Contact Angle

In this article, (NH4)2TiF6, SrNO3 and H3BO3 were used as raw materials to prepare the precursor solution with the ratio of AHFT/SN/BA=1:1:3. The thin films of SrTiO3 were fabricated on the functional silicon substrates (100) by self-assembled monolayers (SAMs) with the liquid phase deposition (LPD). This article also studied the effects of wet state and the deposition temperature of the precursor solution before and after the functionalization of silicon substrate on the thin film growth. The results indicated that after the immersion in OTS for 30min, the surface contact angle of the silicon substrate changed from 24.64° to 100.91°. The substrate appeared hydrophobic property and it was irradiated by UV light for 30min. Then the surface contact angle of the substrate decreased to 5.00°. The substrate appeared hydrophilicity. The concentration of the precursor solution was 0.025 mol/L, the deposition temperature was 40°C and the deposition time was 9h, which were all helpful to SrTiO3 crystallization. XRD and SEM were used to characterize the physical phase of thin film and surface morphology at 600 °C with annealing and heat retaining for 2h. The results indicated that the thin film prepared by the mono-crystal Si substrate was SrTiO3 thin film with better crystalline. On the crystal surfaces of (110), (100), (200) and (211), there appeared the obvious diffraction peaks. The SrTiO3 grains on the surface had the clear outline and were regular and long columnar crystals.

Preparation and Growth of Pb2Sr2Y0.5Ca0.5Cu3O8+δ Thin Film Superconductors

1992 ◽  
Vol 285 ◽  
Author(s):  
S.H.H. Naqvi ◽  
M. Vickers ◽  
S. Tarling ◽  
P. Barnes ◽  
I.W. Boyd
Keyword(s):  
Thin Film ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Ex Situ ◽  
Dc Resistivity ◽  
Basic Set ◽  
Zero Resistance ◽  
Van Der Pauw ◽  
First Time

ABSTRACTThe lead based superconductor Pb2Sr2Y0.5Ca0.5Cu3O8+δ is a most complex material. If any oxygen is present in the PbO-CuOδ-PbO sandwich layer (i.e. if δ>0) the superconductivity deteriorates. This is also a most difficult material to grow not only because of the large number of cation stoichiometries which have to be precisely balanced but also because of the tendency for multiple phases to form. Pulsed laser deposition (PLD) has been applied to prepare thin films of the 2213-phase on MgO (100) single crystal substrates at low temperature (300°C) in low oxidizing atmospheres. A basic set of ex-situ growth conditions has been determined which produce for the first time good quality films of this material as characterized by DC resistivity using the Van der Pauw method, as well as EDX and XRD. The layers are reasonably c-axis oriented and display a superconducting onset transition temperature of 79K and zero resistance at 65K after subsequent annealing in a nitrogen ambient.

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