Emerging techniques for the in situ analysis of reaction intermediates on photo-electrochemical interfaces

2015 ◽  
Vol 7 (17) ◽  
pp. 7029-7041 ◽  
Author(s):  
B. H. Simpson ◽  
J. Rodríguez-López

We offer a perspective on how new in situ methods enable the chemically-sensitive, time-resolved and spatially-resolved exploration of semiconductor surface photo(electro)chemistry.

Author(s):  
Bruna F. Baggio ◽  
Yvonne Grunder

This article reviews progress in the study of materials using X-ray-based techniques from an electrochemistry perspective. We focus on in situ/in operando surface X-ray scattering, X-ray absorption spectroscopy, and the combination of both methods. The background of these techniques together with key concepts is introduced. Key examples of in situ and in operando investigation of liquid–solid and liquid–liquid interfaces are presented. X-ray scattering and spectroscopy have helped to develop an understanding of the underlying atomic and molecular processes associated with electrocatalysis, electrodeposition, and battery materials. We highlight recent developments, including resonant surface diffraction and time-resolved studies. Expected final online publication date for the Annual Review of Analytical Chemistry, Volume 14 is June 2021. Please see http://www.annualreviews.org/page/journal/pubdates for revised estimates.


1980 ◽  
Vol 1 ◽  
Author(s):  
G.L. Olson ◽  
S.A. Kokorowski ◽  
J.A. Roth ◽  
L.D. Hess

ABSTRACTWe report the use of time-resolved optical reflectivity to directly monitor the dynamics of cw laser-induced solid phase epitaxy (SPE) of thin films. This in situ measurement technique utilizes optical interference effects between light reflected from the surface of a sample and from an advancing interface to provide continuous temporal and spatial resolution of crystal growth processes. SPE growth rates of ionimplanted films which are five orders of magnitude faster than previously observed can be induced and accurately measured with the laser method. Arsenic enhances the SPE rate, and spatially resolved measurements show that the growth rate for arsenic implanted films varies in accordance with the ionimplantation profile. Results are reported for silicon selfimplanted samples with and without subsequent arsenic ion implantation, and for silicon samples directly implanted with arsenic.


1996 ◽  
Vol 29 (24) ◽  
pp. 7865-7871 ◽  
Author(s):  
Qiao Zhan ◽  
Renato Zenobi ◽  
Scott J. Wright ◽  
Patrick R. R. Langridge-Smith

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Mazen Erfan ◽  
Martine Gnambodoe-Capochichi ◽  
Yasser M. Sabry ◽  
Diaa Khalil ◽  
Yamin Leprince-Wang ◽  
...  

AbstractCo-integration of nanomaterials into microdevices poses several technological challenges and presents numerous scientific opportunities that have been addressed in this paper by integrating zinc oxide nanowires (ZnO-NWs) into a microfluidic chamber. In addition to the applications of these combined materials, this work focuses on the study of the growth dynamics and uniformity of nanomaterials in a tiny microfluidic reactor environment. A unique experimental platform was built through the integration of a noninvasive optical characterization technique with the microfluidic reactor. This platform allowed the unprecedented demonstration of time-resolved and spatially resolved monitoring of the in situ growth of NWs, in which the chemicals were continuously fed into the microfluidic reactor. The platform was also used to assess the uniformity of NWs grown quickly in a 10-mm-wide microchamber, which was intentionally chosen to be 20 times wider than those used in previous attempts because it can accommodate applications requiring a large surface of interaction while still taking advantage of submillimeter height. Further observations included the effects of varying the flow rate on the NW diameter and length in addition to a synergetic effect of continuous renewal of the growth solution and the confined environment of the chemical reaction.


Author(s):  
David C. Joy

Electron channeling patterns (ECP) were first found by Coates (1967) while observing a large bulk, single crystal of silicon in a scanning electron microscope. The geometric pattern visible was shown to be produced as a result of the changes in the angle of incidence, between the beam and the specimen surface normal, which occur when the sample is examined at low magnification (Booker, Shaw, Whelan and Hirsch 1967).A conventional electron diffraction pattern consists of an angularly resolved intensity distribution in space which may be directly viewed on a fluorescent screen or recorded on a photographic plate. An ECP, on the other hand, is produced as the result of changes in the signal collected by a suitable electron detector as the incidence angle is varied. If an integrating detector is used, or if the beam traverses the surface at a fixed angle, then no channeling contrast will be observed. The ECP is thus a time resolved electron diffraction effect. It can therefore be related to spatially resolved diffraction phenomena by an application of the concepts of reciprocity (Cowley 1969).


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