Excellent graphitic carbon nitride nanosheets-based photoelectrochemical platform motivated by Schottky barrier and LSPR effect and its sensing application

The Analyst ◽  
2015 ◽  
Vol 140 (10) ◽  
pp. 3514-3520 ◽  
Author(s):  
Hong Dai ◽  
Shupei Zhang ◽  
Yilin Li ◽  
Yanyu Lin

A visible light responsive photocatalytic hybrid with excellent photoelectrochemical activity was first fabricated via the self-assembly of Au nanorods onto poly(l-cysteine) modified graphitic carbon nitride nanosheets.

RSC Advances ◽  
2017 ◽  
Vol 7 (59) ◽  
pp. 37185-37193 ◽  
Author(s):  
Chengkong Fan ◽  
Jilin Miao ◽  
Guangqing Xu ◽  
Jiaqin Liu ◽  
Jun Lv ◽  
...  

Well-scattered g-C3N4 nanosheets obtained using a liquid stripping possess much higher photocatalytic performance than bulk g-C3N4.


2015 ◽  
Vol 8 (12) ◽  
pp. 3708-3717 ◽  
Author(s):  
Jingrun Ran ◽  
Tian Yi Ma ◽  
Guoping Gao ◽  
Xi-Wen Du ◽  
Shi Zhang Qiao

Porous P-doped g-C3N4 nanosheets prepared by combining P doping and thermal exfoliation exhibit a high visible-light photocatalytic H2-production activity of 1596 μmol h−1 g−1 and a quantum efficiency of 3.56% at 420 nm.


Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 983 ◽  
Author(s):  
I. Neelakanta Reddy ◽  
N. Jayashree ◽  
V. Manjunath ◽  
Dongseob Kim ◽  
Jaesool Shim

Recently, the engineering of optical bandgaps and morphological properties of graphitic carbon nitride (g-C3N4) has attracted significant research attention for photoelectrodes and environmental remediation owing to its low-cost synthesis, availability of raw materials, and thermal physical–chemical stability. However, the photoelectrochemical activity of g-C3N4-based photoelectrodes is considerably poor due to their high electron–hole recombination rate, poor conductivity, low quantum efficiency, and active catalytic sites. Synthesized Ni metal-doped g-C3N4 nanostructures can improve the light absorption property and considerably increase the electron–hole separation and charge transfer kinetics, thereby initiating exceptionally enhanced photoelectrochemical activity under visible-light irradiation. In the present study, Ni dopant material was found to evince a significant effect on the structural, morphological, and optical properties of g-C3N4 nanostructures. The optical bandgap of the synthesized photoelectrodes was varied from 2.53 to 2.18 eV with increasing Ni dopant concentration. The optimized 0.4 mol% Ni-doped g-C3N4 photoelectrode showed a noticeably improved six-fold photocurrent density compared to pure g-C3N4. The significant improvement in photoanode performance is attributable to the synergistic effects of enriched light absorption, enhanced charge transfer kinetics, photoelectrode/aqueous electrolyte interface, and additional active catalytic sites for photoelectrochemical activity.


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