scholarly journals Electrical control of carriers' spin orientation in the FeVTiSi Heusler alloy

2015 ◽  
Vol 3 (11) ◽  
pp. 2563-2567 ◽  
Author(s):  
Jiahui Zhang ◽  
Xingxing Li ◽  
Jinlong Yang
Keyword(s):  
Spin Polarization ◽  
Heusler Alloy ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Polarization Direction ◽  
Spin Orientation ◽  
Electrical Control ◽  
Carrier Doping

Control of the spin-polarization direction by carrier doping in a quaternary Heusler alloy FeVTiSi with a bipolar magnetic semiconducting character and room temperature ferromagnetism.

scholarly journals Current-Induced Spin Photocurrent in GaAs at Room Temperature

Sensors ◽  
2022 ◽  
Vol 22 (1) ◽  
pp. 399
Author(s):  
Yang Zhang ◽  
Yu Liu ◽  
Xiao-Lan Xue ◽  
Xiao-Lin Zeng ◽  
Jing Wu ◽  
...  
Keyword(s):  
Electric Field ◽  
Spin Polarization ◽  
Applied Electric Field ◽  
Room Temperature ◽  
Polarization Direction ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Sample Plane ◽  
Bulk Gaas ◽  
Circularly Polarized

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

Ferromagnetism in undoped semiconductors

2011 ◽  
Vol 1370 ◽  
Author(s):  
Yandong Ma ◽  
Ying Dai ◽  
Baibiao Huang
Keyword(s):  
Spin Polarization ◽  
Magnetic Moment ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Local Magnetic Moment ◽  
Semiconductor Materials ◽  
Ferromagnetic Coupling ◽  
Dangling Bonds ◽  
Ferromagnetic Properties ◽  
Cation Vacancies

ABSTRACTThe so-called “d0” magnetism observed in semiconductors, which is not caused by partially filled d orbitals, has challenged our conventional understanding on the origin of magnetism. One class of semiconductor materials showing d0 ferromagnetism is undoped oxides and nitrides. Here, we review the ferromagnetic properties of undoped GaN and MgO based on our recent investigations. It is revealed that the room-temperature ferromagnetism originates from the anion dangling bonds associated with the surface cation-vacancies. And the magnetism of ferromagnetic coupling between the vacancy induced local magnetic moment by through-bond spin polarization in undoped semiconductors is reviewed according to our works.

The Magnetic Ordering of SiCN Films Prepared by Ion Implantation

2012 ◽  
Vol 531-532 ◽  
pp. 325-328
Author(s):  
Xu Dong Meng ◽  
Fu Yang ◽  
Xiao Yu Liu
Keyword(s):  
Ion Implantation ◽  
Spin Polarization ◽  
Magnetic Moment ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Ordering ◽  
Local Magnetic Moment ◽  
Vacancy Defects ◽  
Sic Films ◽  
Implantation Dosage

Room-temperature ferromagnetism was observed in the SiCN films prepared by ion implantation. The result indicates that N ion implantation dosage in the film has great effect on the observed room-temperature ferromagnetism of the films. Along with the increase of ion implantation dosage, the N ions increase and the magnetism enhances. Because of the ion implantation will cause a lot of defects on the surface of SiC films, which will induce a lot of vacancies. The C atoms are replaced by the N ions doped, the concentration of the N ions decides the charges states and spin polarizations of Si vacancy defects. Local magnetic moment is induced because of the spin polarization of the Si vacancy defects, and the films show ferromagnetic properties.Charge states and spin polarizations of silicon vacancy defects can be manipulated by N atoms which induces the ferromagnetism.

Oxygen vacancy mediated room temperature ferromagnetism in Cu-doped LiNbO3 thin films

2021 ◽  
Vol 527 ◽  
pp. 167775
Author(s):  
Xiaodong Zhou ◽  
Erlei Wang ◽  
Xiaodong Lao ◽  
Yongmei Wang ◽  
Honglei Yuan
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism
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