Silver chlorobromide nanocubes with significantly improved uniformity: synthesis and assembly into photonic crystals

2015 ◽  
Vol 3 (1) ◽  
pp. 58-65 ◽  
Author(s):  
Zheng Li ◽  
John S. Okasinski ◽  
David J. Gosztola ◽  
Yang Ren ◽  
Yugang Sun
Keyword(s):  
Photonic Crystals ◽  
Size Distribution ◽  
Crystalline Phase ◽  
Growth Process ◽  
Nucleation And Growth

Silver chlorobromide nanocubes with a highly pure crystalline phase and mono-dispersed size distribution are prepared by deliberately tuning the nucleation and growth process.

Fundamental Research into Thin Films in a Developing Country

1972 ◽  
Vol 30 ◽  
pp. 500-501
Author(s):  
J.A. Eades ◽  
E. Grünbaum
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Empirical Process ◽  
Nucleation And Growth ◽  
Research Groups ◽  
Film Research ◽  
Fundamental Research ◽  
Controlled Deposition ◽  
The One ◽  
The University

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.

Evolution of cluster size distribution in nucleation and growth processes

1991 ◽  
Vol 136 (3) ◽  
pp. 181-197 ◽  
Author(s):  
J. Bartels ◽  
U. Lembke ◽  
R. Pascova ◽  
J. Schmelzer ◽  
I. Gutzow
Keyword(s):  
Size Distribution ◽  
Cluster Size ◽  
Nucleation And Growth ◽  
Cluster Size Distribution ◽  
Growth Processes

A micromechanistic model of microstructure development during the combustion synthesis process

1995 ◽  
Vol 10 (4) ◽  
pp. 962-980 ◽  
Author(s):  
Yangsheng Zhang ◽  
Gregory C. Stangle
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Combustion Synthesis ◽  
Growth Parameters ◽  
Experimental Studies ◽  
Nucleation And Growth ◽  
Synthesis Process ◽  
Product Phase ◽  
Nucleation Sites ◽  
Rate Of Increase

The influence of the key nucleation and grain growth parameters on (i) the evolution of the microstructure of the product phase (on a microscopic level) and (ii) the combustion synthesis process (on a macroscopic level) were investigated for the combustion synthesis process in the Nb-C system. This work is an integral part of the continuing effort1–3 to develop a more complete theoretical model for combustion synthesis processes in general. In particular, the nucleation and growth of the NbC(s) product phase from the supersaturated liquid Nb/C mixture that appears briefly during the combustion synthesis process was treated in a greater detail by using a decidedly more sophisticated treatment of the nucleation and growth process (as developed in the field of rapid solidification and welding). It was shown that the microstructure of the NbC(s) product phase, including the evolution of the grain size and the size distribution, and the development of the grain's morphology, as well as the combustion wave velocity, are significantly influenced by the total number density of the nucleation sites, nmax, that are present in the system. The grain size distribution was shown to possess a monosize distribution, since during the combustion synthesis process the rate of increase of the degree of local undercooling was very high so that the nucleation process took place (locally) during a very brief period of time. This work provides a sound basis for developing a better control of the microstructure, and for a better understanding and interpretation of the results of related experimental studies.

Nucleation and growth of Al2O3/metal composites by oxidation of aluminum alloys

1991 ◽  
Vol 6 (9) ◽  
pp. 1964-1981 ◽  
Author(s):  
O. Salas ◽  
H. Ni ◽  
V. Jayaram ◽  
K.C. Vlach ◽  
C.G. Levi ◽  
...  
Keyword(s):  
Growth Process ◽  
Nucleation And Growth ◽  
Al Alloy ◽  
Oxide Growth ◽  
Spinel Layer ◽  
Initial Oxidation ◽  
Temperature Oxidation ◽  
Continuous Formation ◽  
Initial Event ◽  
Al Composite

The nucleation and growth mechanisms during high temperature oxidation of liquid Al−3% Mg and Al−3% Mg−3% Si alloys were studied with the aim of enhancing our understanding of a new composite fabrication process. The typical oxidation sequence consists of an initial event of rapid but brief oxidation, followed by an incubation period of limited oxide growth after which bulk Al2O3/Al composite forms. A duplex oxide layer, MgO (upper) and MgAl2O4 (lower), forms on the alloy surface during initial oxidation and incubation. The spinel layer remains next to the liquid alloy during bulk oxide growth and is the eventual repository for most of the magnesium in the original alloy. Metal microchannels developed during incubation continuously supply alloy through the composite to the reaction interface. During the growth process, a layered structure exists at the upper extremity of the composite, consisting of MgO at the top surface, MgAl2O4 (probably discontinuous), Al alloy, and finally the bulk Al2O3 composite containing microchannels of the alloy. The bulk oxide growth mechanism appears to involve continuous formation and dissolution of the Mg-rich oxides at the surface, diffusion of oxygen through the underlying liquid metal, and epitaxial growth of Al2O3 on the existing composite body. The roles of Mg and Si in the composite growth process are discussed.

Development of the Grain Size Distribution During the Crystallization of an Amorphous Solid

2011 ◽  
Vol 1308 ◽  
Author(s):  
Andreas Bill ◽  
Ralf B. Bergmann
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Growth Rates ◽  
Amorphous Solid ◽  
Amorphous Solids ◽  
Nucleation And Growth ◽  
Analytic Description ◽  
Silicon Thin Films ◽  
Random Nucleation

ABSTRACTWe present an overview of the theory developed over the last few years to describe the crystallization of amorphous solids. The microstructure of the crystallizing solid is described in terms of the grain size distribution (GSD). We propose a partial differential equation that captures the physics of crystallization in random nucleation and growth processes. The analytic description is derived for isotropic and anisotropic growth rates and allows for the analysis of different stages of crystallization, from early to full crystallization. We show how the timedependence of effective nucleation and growth rates affect the final distribution. In particular, we demonstrate that for cases described by the Kolmogorov-Avrami-Mehl-Johnson (KAMJ) model applicable to a large class of crystallization processes a lognormal type distribution is obtained at full crystallization. The application of the theory to the crystallization of silicon thin films is discussed.

Nucleation and growth process of atomic layer deposition platinum nanoparticles on strontium titanate nanocuboids

2017 ◽  
Vol 28 (18) ◽  
pp. 185704 ◽  
Author(s):  
Chuandao Wang ◽  
Linhua Hu ◽  
Kenneth Poeppelmeier ◽  
Peter C Stair ◽  
Laurence Marks
Keyword(s):  
Atomic Layer Deposition ◽  
Strontium Titanate ◽  
Platinum Nanoparticles ◽  
Growth Process ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Layer Deposition

Direct observation of a nucleation and growth process on an atomic scale

1987 ◽  
Vol 181 (1-2) ◽  
pp. 403-411 ◽  
Author(s):  
E. Ritter ◽  
R.J. Behm ◽  
G. Pötschke ◽  
J. Wintterlin
Keyword(s):  
Direct Observation ◽  
Growth Process ◽  
Nucleation And Growth ◽  
Atomic Scale

Influence of temperature rising inhibitor on nucleation and growth process during cement hydration

2019 ◽  
Vol 681 ◽  
pp. 178403 ◽  
Author(s):  
Hao Zhang ◽  
Xin Liu ◽  
Pan Feng ◽  
Lei Li ◽  
Wenbing Wang
Keyword(s):  
Growth Process ◽  
Cement Hydration ◽  
Nucleation And Growth ◽  
Influence Of Temperature

scholarly journals XRPD study of photo-induced HS→LS relaxation of hydrated [Fe(pyrazine)Pt(CN)4]

2014 ◽  
Vol 70 (a1) ◽  
pp. C772-C772
Author(s):  
Teresa Delgado ◽  
Antoine Tissot ◽  
Céline Besnard ◽  
Laure Guénée ◽  
Philip Pattison ◽  
...  
Keyword(s):  
Growth Process ◽  
Room Temperature ◽  
Spin Transition ◽  
Nucleation And Growth ◽  
Test Case ◽  
Relaxation Behaviour ◽  
Time Resolved ◽  
Layer Compound ◽  
Xrd Pattern ◽  
Large Hysteresis

The 2D layer compound [Fe(pyrazine)Pt(CN)4] has received a lot of attention because of its spin transition with a large hysteresis at room temperature, the possibility of bidirectional light-switching, and its potential as sensor for various gases [1], and in a recent study it served as test case for time-resolved electron diffraction on the nano-second time scale [2]. The present study focuses on the photo-induced HS → LS relaxation of the hydrated compound monitored by synchrotron XRPD measurements at 10 K (Figure 1). For the title compound, the time evolution of the XRD pattern shows a complex relaxation behaviour, which can be modelled with an initial random relaxation followed by a nucleation and growth process.

Nucleation, growth, and structure of Al–Mn quasicrystalline thin films prepared by high-temperature vapor deposition

1992 ◽  
Vol 7 (5) ◽  
pp. 1115-1125 ◽  
Author(s):  
P.B. Barna ◽  
A. Csanády ◽  
U. Timmer ◽  
K. Urban
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Growth Process ◽  
Depth Profiling ◽  
Nucleation And Growth ◽  
Quasicrystalline Phase ◽  
X Ray ◽  
Transmission Electron ◽  
Mn Diffusion ◽  
High Temperature Vapor

The nucleation and growth of quasicrystalline thin films during sequential vapor deposition of aluminum and manganese on various substrates have been studied at temperatures between 530 and 650 K. The films were analyzed by transmission electron microscopy, electron diffraction, energy dispersive x-ray analysis, replica techniques, and Auger depth profiling. The quasicrystalline phase is identified as icosahedral. It nucleates on the surfaces of the Al films. There is no indication of substantial bulk Mn diffusion. The growth process is governed by diffusion of Al to the quasicrystal surface where it reacts with the incident Mn.

Sign in / Sign up

Export Citation Format

Share Document