Gravure printed sol–gel derived AlOOH hybrid nanocomposite thin films for printed electronics

2015 ◽  
Vol 3 (8) ◽  
pp. 1776-1786 ◽  
Author(s):  
Terho Kololuoma ◽  
Jaakko Leppäniemi ◽  
Himadri Majumdar ◽  
Rita Branquinho ◽  
Elena Herbei-Valcu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Printed Electronics ◽  
Sol Gel ◽  
Nanocomposite Films ◽  
Hybrid Nanocomposite ◽  
Gravure Printing ◽  
Nanocomposite Thin Films ◽  
High Dielectric

We report a sol–gel approach to fabricate aluminum oxyhydroxide (AlOOH)-based inks for the gravure printing of high-dielectric-constant nanocomposite films.

scholarly journals Preparation of high dielectric constant thin films of CaCu3Ti4O12 by sol-gel

2008 ◽  
Vol 31 (1) ◽  
pp. 55-59 ◽  
Author(s):  
Deepam Maurya ◽  
Devendra P. Singh ◽  
D. C. Agrawal ◽  
Y. N. Mohapatra
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Sol Gel ◽  
High Dielectric

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

Microwave-Assisted Synthesis of High Dielectric Constant CaCu3Ti4O12 from Sol–Gel Precursor

2015 ◽  
Vol 44 (7) ◽  
pp. 2243-2249 ◽  
Author(s):  
Xin Ouyang ◽  
Peng Cao ◽  
Saifang Huang ◽  
Weijun Zhang ◽  
Zhaohui Huang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Sol Gel ◽  
Microwave Assisted Synthesis ◽  
Microwave Assisted ◽  
High Dielectric
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