Polyelectrolyte multilayer-assisted fabrication of p-Cu2S/n-CdS heterostructured thin-film phototransistors

2014 ◽  
Vol 2 (38) ◽  
pp. 8012-8017 ◽  
Author(s):  
Ramphal Sharma ◽  
Gangri Cai ◽  
Dipak V. Shinde ◽  
Supriya A. Patil ◽  
Shaheed Shaikh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyelectrolyte Multilayer ◽  
Chemical Approach ◽  
Wet Chemical

We demonstrate meticulous fabrication of p-Cu2S/n-CdS heterojunction thin films using a facile wet-chemical approach.

Optimization of Superhydrophobicity at the Surface of Iron Sulfide Thin Films by a Wet Chemical Approach

2021 ◽  
pp. 111476
Author(s):  
Ghulam Murtaza ◽  
Usama Zulfiqar ◽  
Ben F. Spencer ◽  
Sai P. Venkateswaran ◽  
Firoz Alam ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Sulfide ◽  
Chemical Approach ◽  
Wet Chemical

SYNTHESIS AND HYDROGEN SENSING PROPERTIES OF CNT-ZnO NANOCOMPOSITE THIN FILMS

2013 ◽  
Vol 22 ◽  
pp. 478-482
Author(s):  
RISHI VYAS ◽  
SARLA SHARMA ◽  
PARUL GUPTA ◽  
K. SACHDEV ◽  
S. K. SHARMA
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Hydrogen Sensing ◽  
Corning Glass ◽  
Current Voltage ◽  
Wet Chemical ◽  
Nanocomposite Powders ◽  
Higher Sensitivity

CNT-ZnO nanocomposite powders were synthesized by addition of carbon nanotubes (CNT) during the growth of ZnO nanoparticles using a wet-chemical method. These CNT-ZnO nanocomposites powder were then spin coated on corning glass substrates to obtain thin films which were characterized using X-ray diffraction, scanning electron microscopy and current voltage characteristics. Hydrogen sensing (50- 1000 ppm) carried out on pure and CNT-ZnO nanocomposites at operating temperature of 250 and 300°C in N2 atmosphere (0.4±0.03 mbar) revealed higher sensitivity in 2 wt.% CNT-ZnO nanocomposite thin film compared to the pure ZnO thin film.

Micro-contact printing of PEM thin films: effect of line tension and surface energies

RSC Advances ◽  
2015 ◽  
Vol 5 (64) ◽  
pp. 51891-51899 ◽  
Author(s):  
Meiyu Gai ◽  
Johannes Frueh ◽  
Agnes Girard-Egrot ◽  
Samuel Rebaud ◽  
Bastien Doumeche ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Microcontact Printing ◽  
Line Tension ◽  
Multilayer Thin Film ◽  
Polyelectrolyte Multilayer ◽  
Contact Printing ◽  
Surface Energies ◽  
Resolution Limits

A theory and method for calculating printing resolution limits for microcontact printing of a condensed polyelectrolyte multilayer thin film, based on surface energies and line tension is presented.

Observation of the Evolution of Etch Features on Polycrystalline ZnO:Al Thin-Films

2009 ◽  
Vol 1153 ◽  
Author(s):  
Jorj Ian Owen ◽  
Jürgen Hüpkes ◽  
Eerke Bunte
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Light Trapping ◽  
Transparent Conducting Oxide ◽  
Window Layer ◽  
Basic Solution ◽  
Atomic Force ◽  
Transparent Conducting ◽  
Wet Chemical ◽  
Observation Method

AbstractThe transparent conducting oxide (TCO) ZnO:Al is often used as the window layer and a source of light trapping in thin-film silicon solar cells. Light scattering in sputtered zinc oxide is achieved by wet chemical etching, which results in craters distributed randomly over the ZnO surface. To gain a better understanding of the etching process on ZnO thin films, a method for atomic force microscope (AFM) realignment between etching steps is developed. Using this method, the evolution of the HCl etch on a polycrystalline ZnO thin-film is observed. Results showed that this observation method did not modify the etching behavior, nor did stopping and restarting the etching change the points of attack, indicating that the points of HCl attack are built into the films as they are grown. Additionally, we investigated the evolution of the HCl etch on a ZnO surface previously etched in KOH, and found that the etch sites for both the acidic and basic solution are identical. We conclude that “peculiar” defects, which induce accelerated etching, are built into the film during growth, and that these defects can extend part or all the way though the thin-film in a similar way as screw dislocations in single crystalline ZnO.

Wet-Chemical Synthesis of Thin-Film Solar Cells

1999 ◽  
Vol 606 ◽  
Author(s):  
R.P Raffaelle ◽  
W. Junek ◽  
J. Gorse ◽  
T. Thompson ◽  
J.D Harris ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Electrochemical Deposition ◽  
Thin Film Solar Cells ◽  
Optical Absorption Coefficient ◽  
Processing Methods ◽  
Wet Chemical Synthesis ◽  
Wet Chemical ◽  
Good Transparency

AbstractWe have been working on the development of wet-chemical processing methods that can be used to create thin film photovoltaic solar cells. Electrochemically deposition methods have been used to produce copper indium diselenide (CIS) thin films on molybdenum coated polymer substrates. CIS has an extremely high optical absorption coefficient, excellent radiation resistance, and good electrical conductivity and thus has proved to be an ideal absorber material for thin film solar cells. A series of compositionally different p-type CIS films were produced by using different electrochemical deposition potentials. Cadmium sulfide (CdS) window layers were deposited directly on these CIS films using a chemical bath process. CdS is a naturally ntype wide-bandgap semiconductor which has good transparency and is well lattice-matched to CIS. Zinc oxide thin films were grown by electrochemical deposition directly on the CdS films. ZnO is a transparent and conductive thin film that serves as the top contact of the cells. The structural and elemental properties of the individual ZnO, CdS and CIS films were characterized by x-ray diffraction and energy dispersive spectroscopy. The electrical behavior of the CdS on CIS junctions was determined using current versus voltage measurements. We will discuss the performance of these devices based on the physical properties of the component films and the processing methods employed in their fabrication.

scholarly journals Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

2012 ◽  
Vol 49 (2) ◽  
pp. 45-50
Author(s):  
O. Shiman ◽  
V. Gerbreders ◽  
E. Sledevskis ◽  
A. Bulanovs
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Etching ◽  
Etching Rate ◽  
Wet Etching ◽  
Sample Composition ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Etching Selectivity

Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film SbxSe100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb40Se60 samples.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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