scholarly journals Efficient energy transfer from ZnO to Nd3+ ions in Nd-doped ZnO films deposited by magnetron reactive sputtering

2014 ◽  
Vol 2 (43) ◽  
pp. 9182-9188 ◽  
Author(s):  
Matteo Balestrieri ◽  
Silviu Colis ◽  
Mathieu Gallart ◽  
Gérald Ferblantier ◽  
Dominique Muller ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Transfer ◽  
Reactive Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
Efficient Energy Transfer ◽  
Efficient Energy ◽  
Doped Zno

Sputtered ZnO thin films doped with Nd present efficient down-shifting properties.

Influence of Annealing and Europium-Doping on the Structure and Optical Properties of ZnO Thin Films Grown on Quartz Substrate by Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 667-672 ◽  
Author(s):  
Q. Q. Dai ◽  
L. Luo ◽  
F. Y. Huang ◽  
D. P. Xiong ◽  
X.G. Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Transfer ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
Efficient Energy Transfer ◽  
Axis Orientation ◽  
Efficient Energy ◽  
Doped Zno

ZnO and Eu-doped ZnO thin films were deposited on quartz substrates by reactive radio-frequency magnetron sputtering from a ZnO and Eu-doped ZnO ceramic target respectively. The properties of thin films were characterized by atom force microscope (AFM), X-ray diffraction (XRD), and photoluminescence spectra (PL). XRD reveals that the prepared thin films possess a single crystalline hexagonal wurtzite crystal structure with preferential c-axis orientation. Under above-bandgap excitation at room temperature, PL shows that ZnO films exhibit strong UV near-band-edge excitonic emission and Eu-doped ZnO thin films present UV emission and red emission from Eu3+ ions, demonstrating efficient energy transfer from the host to Eu3+ ions. The influence of annealing on the structure and optical properties of ZnO and Eu-doped ZnO thin films is studied. The efficient energy transfer from the host to Eu3+ and high luminous efficiency indicates that the prepared Eu-doped ZnO thin films are very promising materials for lighting and flat panel display application.

scholarly journals Correlation of structural properties with energy transfer of Eu-doped ZnO thin films prepared by sol-gel process and magnetron reactive sputtering

2010 ◽  
Vol 107 (12) ◽  
pp. 123522 ◽  
Author(s):  
Julien Petersen ◽  
Christelle Brimont ◽  
Mathieu Gallart ◽  
Guy Schmerber ◽  
Pierre Gilliot ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Transfer ◽  
Structural Properties ◽  
Sol Gel ◽  
Reactive Sputtering ◽  
Zno Thin Films ◽  
Sol Gel Process ◽  
Doped Zno

scholarly journals Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Group Iii ◽  
Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

Photocatalytic Properties of ZnO and Ag Doped ZnO Thin Films

2014 ◽  
Vol 685 ◽  
pp. 3-6
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Structural Features ◽  
Photocatalytic Properties ◽  
Zno Thin Films ◽  
Molar Ratio ◽  
Zno Films ◽  
Doped Zno ◽  
Excellent Adhesion

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.

scholarly journals Optical Properties and Raman Scattering Investigation of Ag Doped ZnO Thin Film Prepared by Two-Step Solution-Based Deposition Method

2015 ◽  
Vol 773-774 ◽  
pp. 739-743
Author(s):  
A.N. Afaah ◽  
N.A.M. Asib ◽  
Aadila Aziz ◽  
Ruziana Mohamed ◽  
Kevin Alvin Eswar ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Ultra Violet ◽  
Peak Shift ◽  
Zno Thin Films ◽  
Zno Films ◽  
Deposition Method ◽  
Immersion Method ◽  
Glass Substrates ◽  
Doped Zno

Mist-atomization deposition method was applied in order to grow ZnO nanoparticles on Au-seeded glass substrates acting as seeded template. Ag doped ZnO thin films were deposited on ZnO seeded templates by solution-immersion method. The influence of Ag doping content on the optical and Raman scattering properties of ZnO films were systematically investigated by UV-Vis transmittance measurement measured by ultra-violet visible spectroscopy (UV-Vis) and Raman scattering spectrum measured by Raman spectroscopy under room temperature. From UV-Vis transmittance measurement, the incorporation of Ag dopant to the ZnO makes the transmittance wavelength shifted to the shorter wavelength as compared to the pure ZnO. From Raman spectra, 4 cm-1 downshift is observed in Ag-doped thin films as compared to pure ZnO thin films. This Raman peak shift shows that a tensile stress existed in the Ag-doped ZnO film.

Luminescent Properties and Energy Transfer in Pr3+Doped and Pr3+-Yb3+Co-doped ZnO Thin Films

2014 ◽  
Vol 118 (25) ◽  
pp. 13775-13780 ◽  
Author(s):  
M. Balestrieri ◽  
M. Gallart ◽  
M. Ziegler ◽  
P. Bazylewski ◽  
G. Ferblantier ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Transfer ◽  
Luminescent Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

scholarly journals Effect of Gallium Incorporation on the Properties of ZnO Thin Films

2019 ◽  
Author(s):  
Sema Kurtaran ◽  
Serhat Aldağ ◽  
Göksu Öföfoğlu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Atomic Force ◽  
Doped Zno ◽  
Ga Doping

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.

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