Direct synthesis of graphene quantum dots on hexagonal boron nitride substrate

2014 ◽  
Vol 2 (19) ◽  
pp. 3717-3722 ◽  
Author(s):  
Xuli Ding
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Direct Synthesis ◽  
Graphene Quantum Dots ◽  
Metal Catalyst ◽  
The Novel

The novel PL properties of GQDs synthesized on h-BN by CVD without any metal catalyst were revealed.

Tuning the electronic and optical properties of hexagonal boron-nitride nanosheet by inserting graphene quantum dots

2018 ◽  
Vol 32 (06) ◽  
pp. 1850084 ◽  
Author(s):  
Yi-Min Ding ◽  
Jun-Jie Shi ◽  
Min Zhang ◽  
Meng Wu ◽  
Hui Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots ◽  
Band Gaps ◽  
Hybrid Structures ◽  
Electronic And Optical Properties ◽  
Boron Nitride Nanosheet ◽  
Optoelectronic Nanodevices

It is difficult to integrate two-dimensional (2D) graphene and hexagonal boron-nitride (h-BN) in optoelectronic nanodevices, due to the semi-metal and insulator characteristic of graphene and h-BN, respectively. Using the state-of-the-art first-principles calculations based on many-body perturbation theory, we investigate the electronic and optical properties of h-BN nanosheet embedded with graphene dots. We find that C atom impurities doped in h-BN nanosheet tend to phase-separate into graphene quantum dots (QD), and BNC hybrid structure, i.e. a graphene dot within a h-BN background, can be formed. The band gaps of BNC hybrid structures have an inverse relationship with the size of graphene dot. The calculated optical band gaps for BNC structures vary from 4.71 eV to 3.77 eV, which are much smaller than that of h-BN nanosheet. Furthermore, the valence band maximum is located in C atoms bonded to B atoms and conduction band minimum is located in C atoms bonded to N atoms, which means the electron and hole wave functions are closely distributed around the graphene dot. The bound excitons, localized around the graphene dot, determine the optical spectra of the BNC hybrid structures, in which the exciton binding energies decrease with increase in the size of graphene dots. Our results provide an important theoretical basis for the design and development of BNC-based optoelectronic nanodevices.

Fabrication of Graphene Quantum Dots and Hexagonal Boron Nitride Nanocomposites for Fluorescent Cell Imaging

2013 ◽  
Vol 9 (10) ◽  
pp. 1679-1685 ◽  
Author(s):  
Juan Peng ◽  
Sheng Wang ◽  
Peng-Hui Zhang ◽  
Li-Ping Jiang ◽  
Jian-Jun Shi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Cell Imaging ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots ◽  
Fluorescent Cell

scholarly journals Etched graphene quantum dots on hexagonal boron nitride

2013 ◽  
Vol 103 (7) ◽  
pp. 073113 ◽  
Author(s):  
S. Engels ◽  
A. Epping ◽  
C. Volk ◽  
S. Korte ◽  
B. Voigtländer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots

scholarly journals Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Gwangwoo Kim ◽  
Kyung Yeol Ma ◽  
Minsu Park ◽  
Minsu Kim ◽  
Jonghyuk Jeon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Physical Properties ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots ◽  
Blue Emission ◽  
Electronic States ◽  
Optoelectronic Property ◽  
Two Dimensional ◽  
One Dimensional

Abstract Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics.

Sub-10 nm stable graphene quantum dots embedded in hexagonal boron nitride

Nanoscale ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 4226-4230 ◽  
Author(s):  
Dongxue Chen ◽  
Ruixi Qiao ◽  
Xiaozhi Xu ◽  
Weikang Dong ◽  
Li Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots ◽  
Helium Ion

Stable graphene quantum dots (GQDs) have been synthesized by embedding CVD grown GQDs into sub-10 nm h-BN nanopores which is milled by helium ion microscope (HIM).

White graphene quantum dots as electrochemical sensing platform for ferritin

2021 ◽  
Author(s):  
Mayank Garg ◽  
Reetu Rani ◽  
Amit L. Sharma ◽  
Suman Singh
Keyword(s):  
Quantum Dots ◽  
Boron Nitride ◽  
Electrochemical Detection ◽  
Hexagonal Boron Nitride ◽  
Graphene Quantum Dots ◽  
Electrochemical Sensing ◽  
Sensing Platform ◽  
White Graphene

Novel use of hexagonal boron nitride quantum dots (hBN QDs) for electrochemical detection of ferritin.

Direct Synthesis of Graphene Quantum Dots by Chemical Vapor Deposition

2013 ◽  
Vol 30 (9) ◽  
pp. 764-769 ◽  
Author(s):  
Lili Fan ◽  
Miao Zhu ◽  
Xiao Lee ◽  
Rujing Zhang ◽  
Kunlin Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Direct Synthesis ◽  
Graphene Quantum Dots ◽  
Chemical Vapor
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